22JAN1 Search Results

Contextual Info: RF-13 Rev 22JAN14 MMCX7–P–C–HF–ST–CA3 MMCX7–J–C–GF–ST–CA3 MMCX7–P–C–GF–RA–CA3 MMCX7-CA SERIES 75Ω MICRO-MINI COMPONENTS SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?MMCX7-CA Shell Material:

Contextual Info: E in 3 u E c n m % *s I i 0IBUJA99 EN PROYfCCIONES F1 DATE DESCRIPTION rev REVISED PER ECO-10-000445 22JAN10 SEE ECR-11-006271 G 25MAR11 DW APPV KK HMR JS LB Oï co SECCION B - B o en .M s 3 X ¡4 1 :Ü W ï f f iK C S ï ^ ^ M 3 # fi i . "' s;í ’íí:í-?•/■k^kk:kfk;kfk:;-^

Contextual Info: D ECO-12-017358 22JAN13 CWR D D OBSOLETE OBSOLETE D D D

Contextual Info: G1 790319-9 brass SEE ECR-14-000953 22JAN14 LP TD Tin plated 1

LR7189

Abstract: E13288
Contextual Info: 4 TH IS DRAWING COPYRIGHT IS 3 U N P U B L IS H E D . RELEASED BY 1TCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N 2 -, - R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. G D E S C R IP TIO N RE V DIMPLES R 15.87 [R.625] MAX WASHER PER ECR 10-000722 22JAN10

Contextual Info: 4 3 RELEASED C O P Y R IG H T FO R ALL By - 2 P U B L IC A T IO N R IG H TS REVISIO N S RESERVED. R D E S C R IP T IO N LTR D1 ECR-1 0 - 0 0 0 2 6 2 D2 ECR-1 0 - 0 2 6 5 3 7 DATE 1 9APR201 0 SRE PCH KK 22JAN1 D DIM A + 0 . 1 0 OBSOLETE 2.00 TE LOGO A PVD DWN

VS-8E2TX06-E

Contextual Info: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • • • • • • • • • • 2L TO-220 FULL-PAK Base cathode 2 1 Cathode 3 Anode 2 Anode 1 Cathode VS-8E2TX06 DESCRIPTION/APPLICATIONS

Contextual Info:  Data Sheet Customer： Product : Multilayer Chip Varistor - VA Series Size: 0402/0405/0508/0603/0612/0805/1206/1210/1812 /2220 Issued Date: 22-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH

Contextual Info: V12W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V6WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V6WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

V10WM

Abstract: V10WM100
Contextual Info: V10WM100 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses

N2A-XX-S153R-35B

Contextual Info: 90° Patterns - Dual Grid Micro-Measurements Transducer-Class Strain Gages GAGE PATTERN Actual size shown. Enlarged when necessary for definition. inch DIMENSIONS RES. IN OHMS GAGE DESIGNATION See Note 1 STANDARD CREEP CODE millimeter ENCAPSULATION OPTION

Contextual Info: VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation

VS-ETX1506FP

Contextual Info: VS-ETX1506-M3, VS-ETX1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS

MCW 0406 AT - Precision

Contextual Info: MCW 0406 AT - Precision www.vishay.com Vishay Beyschlag Precision Wide Terminal Thin Film Chip Resistors FEATURES • Rated dissipation P70 up to 250 mW • Resistance range down to 1  • Superior temperature cycling robustness • Operating temperature up to 155 °C

Contextual Info: VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS

MAL216099

Contextual Info: 160 CLA www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , High Temperature, Low Impedance FEATURES • Useful life for 2000 h at 150 °C • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free

Contextual Info: UDD32C24L01 DESCRIPTION The series are an ultra low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and trans-mission lines from overvoltage caused by ESD electrostatic discharge ,

Contextual Info: VS-ETH1506-M3, VS-ETH1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS

Contextual Info: VS-ETL1506-M3, VS-ETL1506FP-M3 Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC

TDSl3150

Abstract: tdsl3150 m TDSL3160
Contextual Info: TDSL31. Vishay Semiconductors Low Current 10 mm Seven Segment Display FEATURES • Low power consumption • Suitable for DC and multiplex operation • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized

Contextual Info: V20W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses