22JAN13 Search Results

Contextual Info: D ECO-12-017358 22JAN13 CWR D D OBSOLETE OBSOLETE D D D

Contextual Info: V12W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V6WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V6WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C

V10WM

Abstract: V10WM100
Contextual Info: V10WM100 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses

MAL216099

Contextual Info: 160 CLA www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , High Temperature, Low Impedance FEATURES • Useful life for 2000 h at 150 °C • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free

Contextual Info: V20W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V6W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

NEM-QTSB-714PPNS-B

Contextual Info: D rg N o . CU76348Y METRIC 7 6 5 4 3 2 i 2-4-50-08 Rev G A3 NOTE 1. DIMENSIONS ARE NOMINAL UNLESS STATED OTHERWISE. 2. MATERIALS / FINISH BODY PARTS_ST. STEEL_ BLACK ELECTROLESS NICKEL OR ELECTROLESS NICKEL INSULATORS_ HIGH TEMPERATURE THERMOPLASTIC.

Contextual Info: LVB14A www.vishay.com Vishay General Semiconductor Low VF Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Uni-directional polarity only • Peak pulse power: 600 W 10/1000 s • Ideal for automated placement • Low forward voltage

Contextual Info: V12WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: BYWE29-50 thru BYWE29-200 www.vishay.com Vishay General Semiconductor Ultrafast Rectifier  FEATURES • Glass passivated chip junction • Ultrafast recovery time TO-220AC • Low switching losses, high efficiency • Low leakage current • High forward surge capability

Contextual Info: V10WL45 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

V20WM100C

Contextual Info: V20WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: P6SMB Series www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: V20WL45 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: V15WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: STAINLESS STEEL QUALITY CLASS: 10000 MATING CYCLES ENVIRONMENTAL

Contextual Info: Drg No. CU76360Y METRIC 1 2 3 5 6 7 ASTER KEY ASTER KEY ASTER KEY 14 WAY SCALE 2:1 4 2-4-10-08 Rov G A3 19 WAY SCALE 2:1 8 WAY NOTE 1. DIMENSIONS ARE NOMINAL UNLESS STATED OTHERWISE. 2. MATERIALS / FINISH :BODY PARTS_ ST. STEEL_ BLACK ELECTROLESS NICKEL OR ELECTROLESS NICKEL.

Contextual Info: V15W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses

Contextual Info: TWX, TWXF www.vishay.com Vishay Draloric Watercooled RF Power Pot Capacitors External Cooling System FEATURES • High voltage, current, and power ratings • Compact design reduces terminal self inductance and permit operation up to higher frequencies • These pot capacitors feature increased density through

Contextual Info: P2SMA130A thru P2SMA220A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional 200 W peak pulse