22A IC Search Results

DP8420AV-20

Abstract: DP820 DP8422AV-25 DP8421A C1995 DP8420A DP8420AV-25 DP8422A V68A 8420a
Contextual Info: DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a low cost single chip interface between dynamic RAM and all 8- 16- and 32-bit systems The DP8420A 21A 22A generate all the required access control signal timing for

Contextual Info: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse­

H22A1 GE

Abstract: H22A1 H22A2 H22A3 H22A GE H22A1
Contextual Info: E SOLID STATE DE J 3â7SDfll D Q n ? T 0 3 □ 1 Optoelectronic Specifications T W / -73 1mm Aperture Photon Coupled Interrupter Module H 22A 1,H 22A 2,H 22A 3 The G E Solid State H22A Interrupter M odule is a gallium arse­ nide infrared emitting diode coupled to a silicon phototransistor in

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

VNQ600A

Abstract: VND600 VNQ600AP VNQ600AP13TR
Contextual Info: VNQ600AP P QUAD CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VNQ600AP RDS on (*) 35mΩ Ilim 22A VCC 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE nSHUT-DOWN

DP8421AV-25

Contextual Info: DP8420A,DP8421A,DP8422A DP8420A DP8421A DP8422A microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers Literature Number: SNOSBX7A DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a

VND600

Abstract: VNQ600A VNQ600AP VNQ600AP13TR
Contextual Info: VNQ600AP P QUAD CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VNQ600AP RDS on (*) 35mΩ Ilim 22A VCC 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE nSHUT-DOWN

DP820

Abstract: TD647
Contextual Info: DP8420A/DP8421A/DP8422A S3 National Æ M S e m ic o n d u c to r DP8420A/21A /22A microCMOS Programmable 256k/1M /4M Dynamic RAM Controller/Drivers General Description Features The DP8420A/21A/22A dynamic RAM controllers provide a low cost, single chip interface between dynamic RAM and

22A50

Abstract: 22a33 AMC7622 AMC7622A-XXSK
Contextual Info: AMC DOC. #: AMC7622_B November 2002 AMC7622/AMC7622A  ADD MICROTECH CORP. 750mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES The AMC7622/22A series are low dropout regulators rated for 750mA output current. AMC7622/22A series can regulate with as low as 100mV headroom between the input

Contextual Info: ¿A, May 1989 DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M /4M Video RAM Controller/Drivers General Description Features The DP8520A/21A/22A video RAM controllers provide a low cost, single chip interface between video RAM and all 8-, 16- and 32-bit systems. The DP8520A/21A/22A gener­

VND600-E

Abstract: VNQ600AP-E VNQ600APTR-E
Contextual Info: VNQ600AP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE RDS on (*) Ilim VCC VNQ600AP-E 35mΩ 22A 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE

TO-254AA Package

Abstract: FSF9150R4
Contextual Info: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

FSF9150R4

Abstract: 2E12 JANSR2N7403
Contextual Info: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

8520a

Abstract: C1995 DP8500 DP8520A DP8520AV-20 DP8520AV-25 DP8521A DP8522A V68A Dual Port V-RAM
Contextual Info: May 1992 DP8520A DP8521A DP8522A microCMOS Programmable 256k 1M 4M Video RAM Controller Drivers General Description Features The DP8520A 21A 22A video RAM controllers provide a low cost single chip interface between video RAM and all 8- 16- and 32-bit systems The DP8520A 21A 22A generate all the required access control signal timing for VRAMs

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

7n51

Contextual Info: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r

Contextual Info: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000

IXBF32N300

Abstract: B32N ic901 32N300 32N30
Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

RJP60V0DPM

Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

035H

Abstract: 30ETH06 IRFP250 IRFPE30
Contextual Info: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies