22A IC Search Results

DP8420AV-20

Abstract: DP820 DP8422AV-25 DP8421A C1995 DP8420A DP8420AV-25 DP8422A V68A 8420a
Contextual Info: DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a low cost single chip interface between dynamic RAM and all 8- 16- and 32-bit systems The DP8420A 21A 22A generate all the required access control signal timing for

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Equivalent IRF 740

Abstract: irfp250 DRIVER 22a ic IRF 450 MOSFET IRGP35B60PD i c irf 740 RG 265 035H 30ETH06 IRFP250
Contextual Info: PD - 94623B IRGP35B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

Contextual Info: Datasheet RJH60M0DPQ-E0 R07DS1085EJ0200 Rev.2.00 Jun 13, 2013 600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time 8 s typ. • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: Preliminary Datasheet RJH60D0DPK 600V - 22A - IGBT Application: Inverter R07DS0155EJ0400 Rev.4.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

Contextual Info: Preliminary Datasheet RJH60D0DPQ-E0 600V - 22A - IGBT Application: Inverter R07DS0737EJ0100 Rev.1.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

RJH60D0DPM-00

Contextual Info: Preliminary Datasheet RJH60D0DPM 600V - 22A - IGBT Application: Inverter R07DS0156EJ0300 Rev.3.00 Apr 19, 2012 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

Contextual Info: TECH N ICAL DATA Page R124.073.123 STRAIGHT PLUG CRIMP TYPE CABLE 2.6/SO 8 50 NOMINAL IMPEDANCE 0-12.4 FREQUENCY RANGE SMA-COM series CABLES :KX 22A RG 188 RG 316 GHz -65/+165 *c TEMPERATURE RATING V.S.W.R n 1.15 + .02 0.05 RF INSERTION LOSS X F GHz Maxi

Contextual Info: High Voltage IGBT IXGF20N300 VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES

bup212

Abstract: 1200v22a
Contextual Info: BUP 212 IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 212 1200V 22A Pin 3 C E Package Ordering Code TO-220 AB Q67040-A . . . . . Maximum Ratings Parameter

Contextual Info: TECH N ICAL Page 1 DATA I R113.182.590 RIGHT ANGLE PLUG CRIMP TYPE GABLE 2.6/50 S 1 MCX 8ERIE 8 .338 8 .6 -.241 (6 .12 ) .197 (5.0) .468 (11.9) 0.37 (9.4) IDIA 0.065 (01.65) □IA 0.116 (02.95) 50 NOMINAL IMPEDANCE 0-6 FREQUENCY RANGE CABLES :KX 22A RG 188

DS8922A

Abstract: DS8922M DS8922N DS8923A ST412 ST506 DS0085 DS8923AM
Contextual Info: DS8922/DS8922A/DS8923A TRI-STATE RS-422 Dual Differential Line Driver and Receiver Pairs General Description The DS8922/22A and DS8923A are Dual Differential Line Driver and Receiver pairs. These devices are designed specifically for applications meeting the ST506, ST412 and

2N7606U3

Contextual Info: PD-97301B 2N7606U3 IRHLNJ77034 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY ™ Product Summary Part Number IRHLNJ77034 Radiation Level 100K Rads (Si) RDS(on) 0.035Ω ID 22A* IRHLNJ73034 300K Rads (Si) 0.035Ω

Contextual Info: PD-97301A 2N7606U3 IRHLNJ77034 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY ™ Product Summary Part Number IRHLNJ77034 Radiation Level 100K Rads (Si) RDS(on) 0.035Ω ID 22A* IRHLNJ73034 300K Rads (Si) 0.035Ω

DS8922AN

Abstract: DS8923AM
Contextual Info: DS8922/DS8922A/DS8923A TRI-STATE RS-422 Dual Differential Line Driver and Receiver Pairs General Description The DS8922/22A and DS8923A are Dual Differential Line Driver and Receiver pairs. These devices are designed specifically for applications meeting the ST506, ST412 and

Contextual Info: VNQ600AP P QUAD CHANNEL HIGH SIDE SOLID STATE RELAY PRELIMINARY DATA TYPE VNQ600AP RDS on (*) 35mΩ Ilim 22A VCC 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 25A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE