229 TRANSISTOR NPN Search Results

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

TRANSISTOR regulator

Abstract: D40N1 D40N5 D40N2 D40N4 D40N1.2 tab ic D40N3 D40P1 D40P3
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C Max. W D40N1 D40N2 D40N3 D40N4 6.25 6.25 6.25 6.25 v CEO Min. (V) 6.25 120 D40P3 6.25 180 D42R2 D42R3 D42R4 15 225 250 300 15 15 2 50 15 60 300 D40P1 D42R I 30 300 375 6.25 60 250 6.25 300

d40p3

Abstract: D40P5 tab ic D40P1 D42R3 tab 229 D40N1 D40N2 D40N3 D40N4
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

ge d45c8

Abstract: GE D45C5 transistor D44C6 5069 transistor 12C1 90-175 D40C7 TC 5068 D44C2 D44C3
Contextual Info: SILICON POWER TRANSISTORS COMPLEMENTARY 4 AMPERE Pt Tc - 25°C PNP W Vcio Min (V) D44C1 — 30.0 30 — D45C1 27.0 — 30 D44C2 — 30.0 30 — D45C2 27.0 -3 0 D44C3 — 30.0 30 NPN — D44C4 D45C3 27.0 -3 0 aou> -D45C4 Package Type Package Outline No. Silecifii:;ition

D44R4

Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

tab ic

Abstract: GE d44q3 D40N1 D40N2 D40N3 D40N4 D40N5 D40P1 D40P3 D40P5
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE Pt GE Type r c = 25°C Max. W D40N1 D 40N 2 D 40N 3 D40N4 6.25 6.25 6.25 6.25 Min. •c Cont. (V) (A) v CEO 60 250 30 300 60 300 6.25 375 D40P1 6.25 120 D 40P3 6.25 180 S l i i t l D42RI D 42R2 D 42R3 D42R4 6.25

ge d45h11

Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2

D44C5

Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
Contextual Info: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0

d45c6 transistor

Abstract: GE D45C2 d44c3 GE D45C5 transistor D45C5 D45C2 ge d45c8 D45C9 D45C4 08/bup 3110 transistor
Contextual Info: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES GE Type NPN PNP D44C1 - - D45C1 D 44C 2 Pt T c = 25°C Max. W 311.0 30.0 V CEO Min. (V ) 30 - 30 h FE! 200 m A •c Cont. (A) @ IV, ¿.0 25 - 25 _ -¿.0 M in. M ax. hFE @ 1 V , 1A 30 4 .0 40 120 71)

GE RED GREASE

Abstract: D42R3 D40N1 D40N5 D40P3 D40N2 D40N3 D40N4 D40P1 D40P5
Contextual Info: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C Max. W v CEO Min. (V ) hFE •c Cont. (A ) Min. ft hFE @ 10V, 20mA Max. @ 10V, 500mA Typical (MHz) Max. Min. D40N1 6.25 250 30 90 80 D40N2 6.25 250 60 180 80 D40N3 6.25 300 30 90 » f lB i

TSB2151

Contextual Info: M ICROSEM I CORP/POülER 27E D h llS 'ìS G QQDGS41 2 • f^"33 ~l3> PTC TSB215100 PTC TECHNOLOGY Power Transistor Chip, NPN 15 A, 1000 V, tf = 50ns ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

2854K

Abstract: LA12 SLR-50HL1 SLR-50HL2 SLR-50HL3 SLR-50HL4 2854-K
Contextual Info: SLR-50HL Series NPN Photodarlington Features • Narrow receiving angle • Spectrally matched to IRED • NPN planar epitaxial process • TO-18 hermetic dome lens package • Multiple sensitivity ranges • Extended temperature range Description The SLR-50HL series consists of an NPN silicon

LA12

Abstract: SLR-50HF1 SLR-50HF2 SLR-50HF3 SLR-50HF4
Contextual Info: SLR-50HF Series NPN Photodarlington Features • • • • 0.8 Wide receiving angle TO-18 hermetic flat window Multiple sensitivity ranges Extended temperature range 5.1 2.5 4.70 0.41 - 0.48 Description 12 min. The SLR-50HF series consists of an NPN silicon

K 3115

Abstract: RF tuner 900MHz samsung IMTIA 400M KSC2759 k 4145 transistor npn 200w k 4145
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2759 mE | ?*ibq;me OOOt'iSb S | NPN EPITAXIAL SILICON TRANSISTOR T-31-15 MIXER, OSCILLATOR FOR UHF TUNER SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Unit 30 14 3 50 150 150 -5 5 - 1 5 0 V Symbol CoBector-Base Voltage

transistor CR NPN

Abstract: 2sd transistors equivalent
Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2

Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC1741AS

Abstract: 2SC1741
Contextual Info: 2SC1741 AS Transistor, NPN Features Dimensions Units : mm • a v a ila b le in S P T (S C -7 2 ) p a c k a g e • s u ita b le fo r h ig h v o lta g e a n d la rg e c u rre n t o p e ra tio n : V CEO = 50 V, lc = 500 m A • lo w c o lle c to r s a tu ra tio n v o lta g e ,

Contextual Info: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER High fr: 3.5G Hz TYP SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=251C) Characteristic Sym bol Collector-Base Voltage Coilector-Em itter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation

Contextual Info: KSC2758 NPN EPITAXIAL SILICON TRANSISTOR RF. MIXER FOR UHF TUNER S O T -2 3 • HIGH POWER GAIN TYP. 17dB • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: NPN SILICON TRANSISTOR KSC5026 HIGH VOLTAGE AND HIGH RELIABILITY ! HIGH SPEED SWITCHING WIDE SOA TO -220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current (Pulse)

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX1011B430W FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 500 ns/10% Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier.

SE 2040

Contextual Info: KSC5025 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VcBO 800 V Collector- Emitter Voltage VcEO 500 V Emitter- Base Voltage V ebo 7

transistor zo 607

Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the