226B Search Results

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

Contextual Info: Voltage Controlled Oscillators VCOs 500 MHz to 18 GHz Series 226B Features ❏ 1µs Tuning Speed ❏ Low PTD ❏ Analog tuning ❏ Low phase noise Description The Series 226B is a series of VCOs covering the 0.5 to 18 GHz frequency range. Silicon transistors and tuning varactors are used

Contextual Info: 226B Linear ICs Fixed Positive Voltage Regulator status Military/High-RelN Output Voltage Nominal V 15 Load Current Max. (A)200m Tolerance (%) Drop-Out Volt Max.2.5 P(D) Max. (W)1.8 Supply Voltage Maximum (V)40 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)175

2262B

Abstract: 2261B 2263B 2264B 2265B 226B REMEC Magnum
Contextual Info: V olt a ge C ont r olled Os c illa t or s V C Os 5 0 0 M Hz t o 1 8 GHz S er ies 2 2 6 B F ea tu res ❏ 1µs Tuning S peed ❏ Low P T D ❏ Analog tuning ❏ Low phas e nois e D escr iptio n T he S eries 226B is a series of VC Os covering the 0.5 to 18 G Hz

dr 25 germanium diode

Abstract: 1N3666 A11SC U1 4011
Contextual Info: 1 INCH-POUND 1 HIL-S-19500/226B n . i i i n p TQQn S B P f R S n i # -MIL-S-i9500/2z6A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM. SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV T h is s p e c i f i c a t i o n i s approved f o r use by a l l D ep art­

Contextual Info: PR ELIM IN ARY AMDZ1 Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

th02

Abstract: 226B B226
Contextual Info: '$7$ 6+ 7 $35,/ ìääæ /;7ééì 5HYLVLRQ ìïì 6ZLWFKHG èç î ''6 ,QWHJUDWHG '68 î &68 *HQHUDO 'HVFULSWLRQ HDWXUHV ‡ 6XSSRUWV PRVW SRSXODU GDWD UDWHV IRU QHZ '68î&68V ‡ 6ZLWFKHG èç DQG èç NESV ''6 õ''6ð35,ñ èç NESV ORRS VSHHGô ‡ èç NESV ''6 ZLWK VHFRQGDU\ FKDQQHO

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: Am29SL800D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20848-1E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LL800T-15S/MBM29LL800B-15S • FEATURES • Voltage range (2.2 V to 2.7 V) for read, program and erase Minimizes system level power requirements

21545

Contextual Info: ADVANCE INFORMATION Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications

Contextual Info: FLASH MEMORY CMOS X M B 800 E k ts s FEATURES Voltage range 2.2 V to 2.7 V for read, program and erase Minimizes system level power requirements Low power consumption 15 mA maximum active read current for Word Mode 10 mA maximum active read current for Byte Mode

Contextual Info: PRELIMINARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications

800TD

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-3E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , and 48-ball FBGA packages.

226C

Abstract: 227h sc 222m 226A1 250XX 227g 227A100M050XX
Contextual Info: RADIAL LEADED CAPACITORS Subminiature 85°C or 105°C Type 226 - Extended Life, 105°C/Type 227 - High Capacitance, 85°C Designed for use in automotive, commercial & industrial applications, these subminiature aluminum electrolytic capacitors offer a choice o f temperature ranges. Type 226

Mallory Ignition

Contextual Info: FORM 1214M REV. J 09/03 INSTALLATION INSTRUCTIONS UNILITE DISTRIBUTOR This product is applicable to pre-1966 California and pre-1968 federally certified passenger cars. It is also applicable to non-emission controlled trucks and similar vehicles. It is not applicable or intended for use on

Contextual Info: MBM29SL800TD-10/12 MBM29SL800BD-10/12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: ADVANCE INFORMATION A M D ii Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MX29SL800C

Abstract: MX29SL800CT Q0-Q15 SA10
Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture

A800DB12U

Contextual Info: Am29SL800D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture