225 NF Search Results

2N6439

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

527 225

Abstract: 527-225
Contextual Info: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF .750 (19.1) Max M N 1.740 (44.2 ) Max NC NF T .900 (22.9) 2.090 (53.1) Max

Cannon connectors

Abstract: electroless nickel 225 nf MIL-C-38999 MIL-C-3899
Contextual Info: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF M N .750 (19.1) Max NC NF 1.740 (44.2) Max T U* ZN .900 (22.9) 2.090 (53.1) Max

2N6439

Abstract: UT25 coaxial VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

MIL-C-5541 CLASS 3

Abstract: 6061-T5 180 3dB coupler JCC-1009
Contextual Info: MI DRG.NO. JCC-1009A REV. JC C -1 0 0 9 ? nn COUPLER, 90° 225 - 520 MHz. 450W FILE: COUPOUT ELECTRICAL SPECIFICATIONS: FREQUENCY: 225 - 520 MHz. INSERTION LOSS: <0.25dB VSWR: <1.25: 1 ISOLATION: [TYP.] > 20B AMPLITUDE BALANCE: ±0.70dB PHASE BALANCE: POWER:

pfe 225

Abstract: rifa pfe
Contextual Info: PFE 225 Precision Capacitor PFE 225 • • High capacitance density. High stability. • • MU AH AG approval. French standard CPS 82. • • High reliability. High test voltage. • CECC 30901-001. Typical applications Construction This capacitor is made in 7.5 mm module

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

BSM 225

Abstract: bsm225 BSM225A EUPEC TD 56 N 08
Contextual Info: BSM 225 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 225 A 200 V 120 A 0.0175 Ω HB MOS 1 C67076-S1103-A20

PN544

Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Contextual Info: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300

2n3391 complement

Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA

C9014

Abstract: transistor c9014 C9014 Transistor data sheet transistor C9014 VP05 c9014 equivalent UTC7050 C9014 data sheet c9014 datasheet C9014 transistor datasheet
Contextual Info: SA1021 SA1021 76kHz FLL RC SOP-16-225-1.27 MUX 50kHz SA1021 SOP-16-225-1.27 * * * / * * -* * * * * * 2.0 http: www.silan.com.cn 2004.07.31 SA1021 12 13 11 RF 5 7 10 MIX AMP VCO MUTE OSC AF 14 CLIM AMP 16 15 2 e.m.f. I4 Vp=3V Frf - 6 STAB 1 3 Vp= V4-3 -

BSM 225

Abstract: BSM225A bsm225
Contextual Info: euoec F BSM 225 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS b f î D S on max Package Ordering Code BSM 225 A 200 V 120 A 0.0175 Q HB MOS 1

Contextual Info: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES

GS8161Z18AT-300

Abstract: gs816
Contextual Info: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5

n3860

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

diagram LG LCD TV circuits

Abstract: TNY275PN 32 inch LCD TV SCHEMATIC plc810 3m 1350f-1 diagram power supply LG 32 in LCD TV circuits K1058 lg lcd tv POWER SUPPLY SCHEMATIC orient 817A CS330060
Contextual Info: Title Reference Design Report for a 225 W 286 W Peak Power Factor Corrected LLC Power Supply Using HiperPLC (PLC810PG) 90 VAC to 265 VAC Input Specification 225 W (286 W Peak) Total Output Power 5 VSB at 0.5 W 5 V at 9.5 W 12 V at 48 W (60 W Peak) 24 V at 168 W (216 W Peak)

beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V

1105N

Contextual Info: REV AA FIG -P: Ç_ j - P IC K & 4. PLACE PAD O P T IO N MPP-02 n n n n n n n ! 234 [5.94] - - j T -•— .393 [9.98]- .225 [5.72] — -c-_ |^No 0F P0S * -100[2-54]) “ -225[5.72]J -D: — n 0 0 0 U U/\ D O U B LE ROW .395 [10.03] — „ -.435 [11.05]

300V switching transistor

Abstract: CM150RL-12NF
Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com CM150RL-12NF Six IGBTMOD + Brake NF-Series Module 150 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 225 12 150 11 75 10 8 2 4

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-1HLD Amplifier print this page ZHL-1HLD Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Lw U Input no damage NF dB Typ. 225-400 23 ±1.00 +27.00 +27.00 +10.00 2.50

FS225R17KE3

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

FS225R17KE3

Abstract: 2750A
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

FS225R17KE3

Abstract: 2750A
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

M7A transistor

Abstract: transistor M7A MARKING m7a M7A MARKING SOT-23 10 M7A MMBT2907A
Contextual Info: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA