225 NF Search Results

527 225

Abstract: 527-225
Contextual Info: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF .750 (19.1) Max M N 1.740 (44.2 ) Max NC NF T .900 (22.9) 2.090 (53.1) Max

2N6439

Contextual Info: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc

PN544

Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Contextual Info: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300

2n3391 complement

Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA

C9014

Abstract: transistor c9014 C9014 Transistor data sheet transistor C9014 VP05 c9014 equivalent UTC7050 C9014 data sheet c9014 datasheet C9014 transistor datasheet
Contextual Info: SA1021 SA1021 76kHz FLL RC SOP-16-225-1.27 MUX 50kHz SA1021 SOP-16-225-1.27 * * * / * * -* * * * * * 2.0 http: www.silan.com.cn 2004.07.31 SA1021 12 13 11 RF 5 7 10 MIX AMP VCO MUTE OSC AF 14 CLIM AMP 16 15 2 e.m.f. I4 Vp=3V Frf - 6 STAB 1 3 Vp= V4-3 -

Contextual Info: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES

GS8161Z18AT-300

Abstract: gs816
Contextual Info: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5

2N3643

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

n3860

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-1HLD Amplifier print this page ZHL-1HLD Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Lw U Input no damage NF dB Typ. 225-400 23 ±1.00 +27.00 +27.00 +10.00 2.50

FS225R17KE3

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

FS225R17KE3

Abstract: 2750A
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

FS225R17KE3

Abstract: 2750A
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

BCW65ALT1

Contextual Info: ON Semiconductort BCW65ALT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 800 mAdc Symbol Max Unit PD 225

Contextual Info: SIEMENS DL3416 .225" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display With Memory/Decoder/Driver Preliminary Date Sheet Package Dimensions in Inches mm ( 15.24) pin 1 indicator part no. EIA date code intensity code FEATURES nmmnnn

M7A transistor

Abstract: transistor M7A
Contextual Info: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)

Contextual Info: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)

Contextual Info: ANALOGIC The Worid Resource for Precision Signal Technology % n SHA2200 % High-Speed, 225 ns High Accuracy Wideband Sample-and-Hold Amplifier Performance Features Features The SHA2200 is a fast precision sample-and-hold amplifier, featuring an acquisition time of

pin voltage of ic 393

Contextual Info: SENSITRON SEMICONDUCTOR SHD444003 TECHNICAL DATA DATA SHEET 225, REV – Formerly part number SHD4463 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN AN LCC-4 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .

stocko mks

Abstract: frequency receiver circuits diagram transistor SMD FLO 14 LQP21A power amplifier circuit diagram with pcb layout Murata LQP21A balun sma SMD 0805 capacitor smd symbols transistor K 2333
Contextual Info: ICs for Communications Mixer/Amplifier PMB 2333 Receiver Application Board Application Note - Delta Sheet 11.96 Mixer/Amplifier PMB 2333 Receiver Application Board PMB 2333 AI AO LNA 1960 MHz Matching Matching ÎF out 225 MHz MI Matching + Balun Matching + Balun

BCW68GLT1

Contextual Info: BCW68GLT1 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –800 mAdc Symbol Max Unit PD 225 mW 1.8

HT506

Abstract: HT506DC HT507 HT507DC
Contextual Info: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics • No Latch-up

1N916

Abstract: BCW33LT1 MPS3904
Contextual Info: ON Semiconductort BCW33LT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW