225 NF Search Results

GS8161Z18AT-300

Abstract: gs816
Contextual Info: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5

2N3643

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-1HLD Amplifier print this page ZHL-1HLD Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Lw U Input no damage NF dB Typ. 225-400 23 ±1.00 +27.00 +27.00 +10.00 2.50

FS225R17KE3

Abstract: 2750A
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

M7A transistor

Abstract: transistor M7A
Contextual Info: MMBT2907AW PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW SOT-323 Unit: inch mm PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V 0.087(2.20) 0.070(1.80) Collector current IC = -600mA 0.087(2.20) 0.078(2.00)

Contextual Info: ANALOGIC The Worid Resource for Precision Signal Technology % n SHA2200 % High-Speed, 225 ns High Accuracy Wideband Sample-and-Hold Amplifier Performance Features Features The SHA2200 is a fast precision sample-and-hold amplifier, featuring an acquisition time of

pin voltage of ic 393

Contextual Info: SENSITRON SEMICONDUCTOR SHD444003 TECHNICAL DATA DATA SHEET 225, REV – Formerly part number SHD4463 SMALL SIGNAL TRANSISTOR DESCRIPTION: SINGLE NPN SMALL SIGNAL TRANSISTOR IN AN LCC-4 PACKAGE. MAXIMUM RATINGS RATING ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED .

HT506

Abstract: HT506DC HT507 HT507DC
Contextual Info: HTMOSTM High Temperature Products Preliminary HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics • No Latch-up

1N916

Abstract: BCW33LT1 MPS3904
Contextual Info: ON Semiconductort BCW33LT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW

Contextual Info: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: Honeywell Preliminary HTMOS High Temperature Products HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics • No Latch-up

MMBF5460LT1

Contextual Info: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8

Contextual Info: bOE D m fl235bD5 DQMS'm 18T «SIEG T = ^ ^ 7 C IC U C M C SIEMENS AKTIENGESELLSCHAF SIEMENS DL3416 .225" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display With Memory/Decoder/Driver Preliminary Data Sheet Package Dimensions in Inches mm

Contextual Info: General Description Features The MIC5203 is ajiC ap 80 mA linearvoltage regulatorwith very low dropout voltage typically 20mV at light loads and 300mV at 80mA and very low ground current (225 jaA at 20mA output), offering better than 3% initial accuracy with a

Contextual Info: Honeywell H TM O S High Temperature Products Prelim inary HIGH TEMPERATURE ANALOG MULTIPLEXERS 16-CHANNEL SINGLE / 8-CHANNEL DUAL HT506/507 FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Break-Before-Make Switching • Avionics

Contextual Info: M X-826 Precision, High-Speed Multiplexer □ M ÎT FEATURES • • • • • • 225 nSec. maximum settling time to 0.01% 400 nSec. maximum settling time to 0.003% 150 nSec. maximum settling time to 0.1% 8 Channels single-ended inputs 395 mW Power dissipation

Contextual Info: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225|aA at 20mA output current), and

Contextual Info: MIC5211 Dual jiCap 50mA LDO Voltage Regulator Preliminary Information General Description Features The M IC5211 is a dual uCap™ 50mA linear voltage regulator with very low dropout voltage typically 20mV at light loads , very low ground current (225 jaA at 20mA output current), and

Contextual Info: Coaxial Amplifier 50Ω High Isolation ZHL-1HLD 225 to 400 MHz Features • very low noise, 2.5 dB typ. • active directivity isolation-gain , 34 dB typ. Applications • UHF • receivers • two-tone, third order IM testing • laboratory CASE STYLE: T34

ABB Semiconductors

Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1534-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

IGBT abb datasheets

Abstract: IGBT abb
Contextual Info: VCE IC = = 1700 V 225 A IGBT Module LoPak5 SPT 5SNS 0225U172100 MARKETING INFORMATION • • • • • • Doc. No. 5SYA1537-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless

Contextual Info: SEMiX223GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 333 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX223GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V

Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 364 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX353GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V

Contextual Info: SEMiX353GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 364 A Tc = 80 °C 256 A 225 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX353GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V