225 ESM Search Results

225 esm

Contextual Info: E-Series 2-Way 0° Power Divider 0.1 - 450 MHz ESM-2-1 V3.00 Features ● ● R-6 2 Way 0° Specifications @ 25°C Frequency Range 0.1 - 450 MHz Insertion Loss 0.1 - 1 MHz 1 - 225 MHz 225 - 450 MHz Typical 0.3 dB 0.4 dB 0.6 dB Maximum 0.5 dB 0.75 dB 1.0 dB

2-WAY 0 degree POWER splitter

Contextual Info: E-Series 2-Way 0° Power Splitter 0.1 - 450 MHz ESM-2-1 R-6 Features • 2-Way • 0 Degree • Wide band .020 ± .005 DIA 0.51 ± 0.13 3 PLACES Specifications @ 25 C 0.1-450 MHz Frequency Range Insertion Loss 0.1-1 MHz 1-225 MHz 225-450 MHz 0.3 dB Typ 0.4 dB Typ

1655

Abstract: ESMD-C21 ESMD-C21TR
Contextual Info: E-Series Surface Mount Mixer 1710 - 1880 MHz ESMD-C21 V3.00 Features ● ● ● SM-2 LO Power: +10 dBm Up to +9 dBm RF Surface Mount Specifications @ 25°C Frequency Range RF LO IF 1710 - 1880 MHz 1560 - 1655 MHz 150 - 225 MHz Conversion Loss dB 1710 - 1880 MHz

Contextual Info: m a n A M P <c o m p a n y E-Series Surface Mount Mixer 1710-1880 MHz ESMD-C21 V3.00 Features SM-2 • LO Power: +10 dBm • Up to +9 dBm RF • Surface Mount Specifications @ 25 ° c Frequency Range RF LO IF 1710 - 1880 MHz 1560 - 1655 MHz 150 - 225 MHz Conversion Loss dB

Contextual Info: SHEET 1 OF 1 5.08 [.200 ] 01.85 [.073] TYP. 13.20 [.520] 5.08 _| [.200] T 1.22 J 5.72 [.225]PFLAT [.048] 3.81 [.150] Typ J RECOMMENDED P.C.B. LAYOUT NOT TO SCALE 3.00 [.118] 6.35 [.250] 1 Con. CIRCUITi SPDT 1 /4 - 4 0 UNS THD. SWITCH FUNCTION DN DN 1 -3

BSS80BL

Contextual Info: T"-'5 7 - / 7 1 2 E D I M A X IM U M R A T IN G S Symbol Value U nit Col!ector*Emitter Voltage VcEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage vebo 5.0 Vdc ic 800 mA Symbol M ax U nit Pd 225 mW 1.8 mW/°C RflJA 556 °C/W pd 300 mW 2.4 mW /°C

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

225 esm

Contextual Info: m a n A M P co m pa n y E-Series 2-Way 0° Power Divider 0.1 - 450 MHz Features • 2 Way • 0° ESM-2-1 R-6 NO TE : PI;N N U h B E R S UQ MOT APPEAR OH U N IT. FOR R E F E R g N C * OH L'f. LcTTES S *EC* over p ;n z Specifications @2S°c Frequency Range

Contextual Info: jtà i M a n A M P <c o m p a n y E-Series 2-Way 0° Power Divider 0.1 - 450 MHz ESM-2-1 V3.00 R-6 Features • • Tor 2 Way 0° VIEW NOTE : PON NUMBERS EC L iz . I tN S a v i^ iPiH ? D»? NOT APPEAR ON UNITFOR REFERENCE O iiL Y . j Specifications @ 25 ° c

byx 200

Abstract: esm diodes byx 65 400 243300 243_400 243400 BYX/400 65400 ESM 244-600 244-600
Contextual Info: rZ7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Continued Type •o VRRM •fsm 1 vF iF 10 ms max ESM 765PI-600 ESM 765PI-800 BYX61- 50, BYX 61-100, BYX 61-200, BYX 61-300, BYX 61-400, (R) (R) (R) (R)

ESM3030DV

Contextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

esm3030dv

Abstract: transistor AC 307 MS10A
Contextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

esm3030dv

Contextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

ESM3030DV

Contextual Info: ESM3030DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

arinc 600 coax pin size 8

Abstract: 1622A NCFMA2-62
Contextual Info: MIL-C-81659 Rack and Panel Filter Connectors TDPX TDPX filter connectors are used primarily on commercial and military aircraft for radio and instrumentation equipment and are available in single thru four gang version with standard ARINC shells and polarizing posts. They are intermateable with

ESM3030DV

Contextual Info: r Z 7 S G S -T H O M S O N ^ 7# M D œ m iC T IfM D Ig ESM 3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS

100V 20a DC MOTOR DRIVER UC3844

Abstract: quad darlington 80V step-down uc3843 h-bridge L298N l200 regulator sgs L298N dmos full bridge 100V GS-D550 GS-T30-1200 microstep drive STEPPER MOTOR
Contextual Info: ALPHANUMERICAL INDEX Type Number 29 ESM1600B Quad Comparator Interface C irc u it. ESM1602B Quad Comparator Interface C irc u it. 37 GS-C200 Intelligent Stepper Motor Controllers M o d u le .

transistor Bc 540

Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

diode esm

Contextual Info: S ic S G S—THOMSON « i D 1• T H O M S O N -C S F ? ci a ci 5 3 ? E S M MWieiAkl CCàil/*/MirM i m i mo DISCRETS DIVISION SEMICONDUCTEURS 000231b 2 4 4 -5 0 , R " " * ESM 244-600, (R) SU PER SW ITC H f a s t r e c o v e r y r e c t i f i e r d io d e s

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

STI3009

Abstract: ESM3004 STIP8006 ESM3002 2SA1227AP STIP-8006 TRS-500 STI-3005 ESM3001 2SC3676
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) Po Max h re *T ON) Min (Hz) r ICBO (CE)sat Max Max (A) (8) Max (Ohms) T Op«r Package Style Max (°C) D vices 20 Watts or More, (Cont'd) 5 10 HSE830 BUW49 BUW49 SS2007

RF1000LF

Abstract: RF600LF-16 2743019447 fair-rite 47nj capacitor transformer mttf RF600LF ATC100B241JT200XT RF1000LF-9 electrolytic capacitor series WB RF transformer turn ratio
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 4, 4/2010 RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

AHE2815DF/CH-MSTR

Abstract: AHE2812D/CH 52467 AFC461 AHE2812D AHE2815D AHE281XD Features Of AHE2815DF
Contextual Info: LAMBDA ADVANCED ANALOG INC. λ AHE281XD Series Dual Output, Hybrid - High Reliability DC/DC Converter DESCRIPTION The AHE Series of DC/DC converters feature high power density and an extended temperature range for use in military and industrial applications.