223FL Search Results

EVK31-050

Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Contextual Info: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr

esja57

Abstract: ESJA57-04 ESJA54-06 ESJA54-08 ESJA57-03 ESJA58-06 ESJA58-08 DIODE 6kv HIGH VOLTAGE DIODE 6kv
Contextual Info: COLLMER SEMICON DUC TOR INC 34E D • 223fl7ci2 0001447 S * C O L High voltage silicon rectifier diodes 5mA avg., up to 8 kV ESJA57-D ESJA58-D ESJA54-D M a x im u m ratings Maximum ratings Type Thermal ratings Repetitive peak reverse voltage Average forward

transistor darlington package to.3

Abstract: 2SC2625 I251 2SC2246 fl251 2sd920 2SC2243 sewing motor 2sd930 2SC2542
Contextual Info: “C D L L M E R S E M I C 0 N í üC T 0 R INC 74 DfT|223fl7T2 D 0 D G h 3 7 S Katings and Specifications 2238792 C O L L M E R S E M IC O N D U C T O R 74C 00637 IN C V ~ CÛiüMR SEMICOMOUCTÜ 14368 PROTON ROAD DALLAS, TEXAS 7S244 USMUWl 214-233-1589 High speed switching transistors

2DI75D-055A

Abstract: M104 ETF81-050 EVL32 M101 M105 M201 EVM-31 transistor bI 340
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

EVL31-050

Abstract: EVM31-050A EVK31-050 EVK71-050 EVL32 ETF81-050 2DI75D-055A M101 M104 M105
Contextual Info: g j j j i BIPOLAR TRANSISTO R M O D ULES rnmmmHsM Ratings and Specifications H y • • • • 6 0 0 v o lts class p o w e r tra n s is to r m o d u le s P o w er transistors and fre e w h e e l diodes are b uilt into one package. All term in a ls are insulated fro m m o u ntin g plate.

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

pj 899 diode

Abstract: pj 899 2sk mosfet DD01 it900
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S

ERD31

Abstract: ERD31-02 ERD31-04
Contextual Info: COLLMER SEMICONDUCTOR INC 34E » • SSaaTTS DQÛ1S17 0 BiCOL “~Z. S ilico n rectifier d io d e s / F a s t re co v e ry . _ \CT 1. 5 A a v g . , up to 4 0 0 volts E R D 3 1 - D M axim um ratings Maxim um ratings Repetitive peak reverse voltage Type V rrm

IG8T

Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
Contextual Info: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage

2SK897-M

Abstract: 897m 2sk897
Contextual Info: 2 S K 8 9 7 -M S IP M O S FU JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed sw itching • Low on-resistance • No secondary breakdow n • Low driving p o w er • High voltage ■A pplications

diode mark L2

Abstract: ERA83-004
Contextual Info: ERA83-004 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f Color code ; W hite • Ultra small package, possible for 5mm V pitch automatic insertion V o lta g e class • Super high speed switching • High reliability by planer design

Contextual Info: SPEC F I CATI ON DEVICE NAME : 1G B T TYPE NAME : 1 M B H 5 0 — 060 SPEC. No. : MS 5 F 3 5 2 4 DATE : Jun.-25-1996 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric Co^Lid.

Schottky Diode SC-62

Abstract: SE046 diode sc-62
Contextual Info: COL L HE R S E M I C O N D U C T O R SE046 o INC 4flE D • 2 2 3 0 7 ^ 2 G00174fi 2flfl » C O L . 9 5 A _ 2 2 V ■ Outline Drawings SCHOTTKY BARRIER DIODE i 6 ma:X. 4.6 MAX. 1 ¡anh) 0.44 MAX. 0.55 MAXJ-J_ .15, . 15 I 0.48 MAX.

5101U

Abstract: 7MBP25RA120 L150 I258
Contextual Info: 7MBP25RA120 IGBT-IPM R series 1200V ' 2 5 A 7 in o n e -P a c k a 9 e I Features • Temperature protection provided by directly detecting the junction temperature of the IGBTs • Low power loss and soft switching • Compatible with existing IPM-N series packages

Contextual Info: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching

QQG441A

Abstract: DDD4421
Contextual Info: S P E C 1 F 1 C A T 10 N DEVICE NAME : TYPE NAME : SPEC. Mo. • MS 5 F 3 5 3 1 DATE • Jun. -25-1996 1G B T 1 M B H 2 5 - 1 20 Fuji DATE CH£CK£D E l e c t r i c Co.Ltd. This Specification is subject to change without not ice. NAME APP RO VE D Fuji Electric Ca,Lid.

cnc schematic

Abstract: A2214 3D7D 82307 SC 2630 2SK1505-M
Contextual Info: 2SK1505-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High cu rren t • Low on-resistance • N o secondary breakdow n • Low driving p o w er • High fo rw a rd T ran scon d u ctan ce

Contextual Info: _ _ _ _ 1-Pack IGBT 1M B I [IT L S Ê îr D S O Ë M IGBT MODULE N series I Outline Drawing • Features -10l±i— —93iU - Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance

KBP06

Abstract: 94v0 circuit board KBP02 KBP005 KBP01 KBP04 KBP08 KBP10
Contextual Info: KBP005 Thru KBP10 1.5 AMP SILICON BRIDGE RECTIFIER • FEATURES • • • • Rating to 1000V PRV Surge overload rating to 40 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product

D83M-004

Abstract: d83m d83m004 tfk 545 d83m00 g30a ESAD83M-004 VM48 TFK 102
Contextual Info: E S A D 8 3 M -0 0 4 3 oa ê±/j Outline Drawings SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . • teVF m m m & fa Connection Diagram Low V F S up er h ig h speed s w itc h in g . High reliability by planer design . : A pplications

SM 91A

Contextual Info: SPECIFICATION SILICON DIODE TYPE NAME : E RW O 4 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co., Ltd. This Sp ecification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric Co^Lici. CHECKED 1/6 Y 0257-R-004a 22307^2 DDDSTbû 5T7

ERW11-120

Contextual Info: S P E C I F I C A T I DEVICE NAME : SILICON DIODE TTPE NAME : E R W 1 1- SPEC. No. :_ O N 12 0 DATE_ :_ _ F u j i This Specification DATE NAME E l e c t r i c is s u b j e c t APPROVED Co., Ltd. to c h a n g e wi thout notice.

Contextual Info: S P E C 1 F 1 CAT 1 0 N DEVICE NAME 1G B T TYPE NAME 1M B 0 8 - 1 2 0 SPEC. No. M S 5 F 3 5 2 8 DATE_ :_ Jun.-25-1996 F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice, DATE NAME APPROVED Fuji Electric C o ^ U d .

Contextual Info: S P E C I F I C A T I ON • 25367^2 000437=1 TTT ■ Ratings and characteristics of Fuji IGBT 1 M B H 1 OD — 1 2 0 2- Equivalent circuit 1. Outline Drawing C:Collector G:Gate o- FWD C O N N E C T IO N ■ i GATE © CO LLECTO R i Q EM ITTER 3. Absolute maximum ratings