22367T2 Search Results

SC015-4

Abstract: 15X15 SC015-2 SC015-6
Contextual Info: SCOI 5 1.0A GENERAL USE r e c t i f i e r d io d e Outline Drawing • 12-“ I Features Marking • Surface mount device • High reliability 1 1 l u u L iviAAr~\r\ 1INva I - SYMBOL _ Applications / p ■ AB 1 • General purpose rectifier applications

6MBI50J-120

Abstract: F4956 DIODE M4A F495
Contextual Info: This Material Copyrighted By Its Respective Manufacturer 2. 3. Equivalent C irc u it of Module Equivalent C irc u it -04- +o- -OE ,C O GICH G3CH BtO — 630— C50—I C2CHI ' ' C4CH l B20- B40- -O O 1V a E50- -o . gscH Current Control C ircu it - ù w I

Contextual Info: 2 2 3 0 7 ^ 2 0 0 0 4 3 3 7 3 3 e! SP EC I F I C A T I ON DEVICE NAME : TYPE NAME \ SPEC. No. - MS 5 F 3 5 2 9 DATE : Jun.-25-1996 I G8 T 1M B 1 0 - 1 2 0 F u j i N AM E e c t r i c Co., Ltd. This Sp ecificatio n is subject to change without not ice. APPROVED

Contextual Info: FUJI IGBT & FWD 600 V 10 A 1MBG 10D-060 t n U K S T D S D E Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Minim ized Internal Stray Inductance ■ Applications • High Pow er Switching

D1108

Abstract: TS802C04
Contextual Info: TS802C04 ioa g ± 'J K : Outline Drawings SCHOTTKY BARRIER DIODE »V «•5*“ 132 Si - 12. T „ [o jîf 0ÀJ 2.7 -S-W : Features • n m JEDEC Surface m o u n t device. e ìa j • ffiVp m m & m Low Vp Connection Diagram Super high speed s w itc h in g .

Contextual Info: SPECI FI CATI ON DEVICE NAME : TfPE NAME : SPEC. No. : MS 5 F 3 5 1 5 DATE : Jun.-25-1996 1G BT 1 M B H 2 5 D - 1 20 F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change w ith o u t notice. • ; NAME DATE APPROVED 0RAWNI / U \au —

h04 4b

Abstract: H04-004-03 EI 33c LTCL
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Ratings and c h a ra c te ris tic s o f F u ji IGBT 1 M B C O 5 — O 1. Outline Drawing 6 O 2- Eq u ivalen t c ir c u it 4 .5 4 0 .2 l-3 ± 0 .2 C:Collector O Ì G:Gate o PRE-SOLDER 0 .4 2 .7 ± 0 .2

HIGH VOLTAGE DIODE 12kv

Abstract: ESJA52-12A
Contextual Info: SPECIFICATION Device Name_ : High Voltage Si Iicon Diods T vpg Name_; E S J A 5 2 ^ 1 2 A _ No._ :_;_ tlil« m nUrial arid the tnformiiUon har«ln |k ih* pro|>firty of Fuji Eltctilc C o.,ltd. Th*y *hid1 b* r«l|h«r reptcKlucsd, çoplitd.

TP802C09

Contextual Info: TP802C09 10A H Outline Drawing scHOTTKY b a r r i e r dio de 4.5 ,(0 .18) 10.5 (0 .41) rd 1.32 (0 .05) 1.2 (0 .05) d 0.8 (0 .03) 2 .5 4 (0 .1) 2.54 ( 0 . 1) 0.4 (0 .02) 2.7 (0.11) Tabless TO-220 • Connection Diagram ■ Features • Lo w V f • Super high speed switching

1S55

Abstract: SC-65 HT 25-19
Contextual Info: JL S P E C 1 F 1 C A T 1 ON DEVICE MAME 1G B T TYPE NAME : SPEC. No. : 1M B 0 5 — 1 2 0 M S 5 F 3 5 2 7 M Œ _ ;_ Jun. -25-19% F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without not ice. I DATE NAME APPROVED Fuji Electric Co4id.