2222 DIODE Search Results

Contextual Info: 5082-2222 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)6.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

m1b marking

Abstract: MMBT2222 MMBT2222A 1N914 MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA
Contextual Info: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage

m1b marking

Abstract: 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 2222A MOTOROLA 1N914 SOT-23
Contextual Info: MOTOROLA Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage

mmbt2222A

Abstract: MMBT2222ALT1 marking QE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBT2222LT1 MMBT2222ALT1* General Purpose T ran sisto rs NPN Silicon ’M otorola Preferred Device MAXIMUM RATINGS Symbol 2222 2222A Unit Collector-Emitter Voltage VCEO 30 40 Vdc Collector-Base Voltage v CBO 60 75 Vdc

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage

transistor 2222a to-92

Abstract: MMBT2222ALT1 1P Marking code CS 1n914 SOD123 2305 SOT-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage

ECH84

Abstract: ECH8401
Contextual Info: Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features unit : mm 2222 [ECH8401] 0.3 5 1 4 0.65 0.15 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.25

LM5045

Abstract: smd diode 2222
Contextual Info: User's Guide SNVA627B – January 2012 – Revised January 2014 AN-2222 LM5045 Based 720W Power Converter Utilizing Current-Doubler Topology on the Secondary 1 Introduction The LM5045 based 720W reference board is designed to evaluate the performance of the current doubler

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

VN0605T

Abstract: VN0610LL VN10LE VN10LM VN2222LL VN2222LM
Contextual Info: VN10/0605/0610/2222 Series Siliconix NĆChannel EnhancementĆMode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM

TO-237

Abstract: vn0605t transistor VN10 VN10 application VN0605T 70212 VN2222LM 2222 400-125 VN10LE
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

mosfet vn10lm

Abstract: VN10 mosfet vn10 VN10LE VN0605T VN0610LL VN10LM VN2222LL VN2222LM S-52429-Rev
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

LTPL-P00DWS57

Abstract: LTPL-P00D LTPL-P00DWS LTPL-P00 CAS140B
Contextual Info: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX:+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 FAX HIGH POWER LED LTPL-P00DWS57 DATA SHEET LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only

1N 2907A

Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
Contextual Info: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series

mpq2222a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Q uad General Purpose T ran sisto rs M PQ 2222 M P Q 2222A * NPN Silicon La x J l A J ‘Motorola Preferred Device NPN I M I , ,1,Y ! UJ m liJ UJ li! LiJ Li 1 M AXIM U M R ATINGS Rating Symbol MPQ2222 Collector-Emitter Voltage

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

MOV 270/20

Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Contextual Info: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003

CFL inverter circuit schematic diagram

Abstract: 3 phase inverter schematic diagram led lamp 230v circuit diagram ELECTRONIC BALLAST 13W circuit diagram half bridge inverter schematic 3 CFL inverter circuit schematic diagram philips cfl internal circuit 13w cfl circuit BALLAST low loss philips PHU2N60E
Contextual Info: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN98091 Philips Semiconductors Philips Semiconductors APPLICATION NOTE Application Note Abstract A description is given of a 13W electronic CFL ballast SMD demo board PR38922 and leaded demo board

ITT 2222 npn

Abstract: transistor 2222a ITT 2222 A itt 2222a itt 2222 ip 2222A 2222a 2222A transistor MP02222A MPQ2222
Contextual Info: MPQ2222,A* M AXIM UM RATINGS Symbol Rating MPQ2222 M P02222A Unit C o ll e c t o r - E m i t t e r V o lt a g e v CEO C o lle c t o r - B a s e V o lt a g e VCBO 60 E m it t e r - B a s e V o lt a g e vebo 5 .0 Vdc 'c 500 m Adc C o lle c t o r C u r r e n t — C o n t in u o u s

TRANSISTOR SMD 13W

Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
Contextual Info: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 replaces previous version AN98091 Philips Semiconductors Philips Semiconductors CFL 13W demo PCB with UBA2021 for Integrated lamp-ballast designs Application Note

CFL inverter circuit schematic diagram

Abstract: cfl circuit diagram of 12 volts 3 CFL inverter circuit schematic diagram cfl ballast cfl circuit diagram AN98091 CE167V cfl circuit diagram of 6 volts PHU2N60E BALLAST CFL
Contextual Info: AN98091 CFL 13 W demo PCB with UBA2021 for integrated lamp-ballast designs Rev. 02 — 29 December 2008 Application note Document information Info Content Keywords CFL ballast, UBA2021, compact, half-bridge, driver circuit Abstract A description is given of a 13 W electronic CFL ballast SMD demo board

Contextual Info: SEMiX 191KD . THYRISTOR BRIDGE,SCR,BRIDGE %&' %'  '& * +,  - .  /         % % (% * 12  - 3 +24 5 * +, 6 0 22 722 Symbol Conditions (% (&' = SEMiX 1s Rectifier Diode Module SEMiX 191KD &8' 9 1:"7 Values Units

mpq2222 motorola

Abstract: transistor 2222a q2222 MPQ2222A ip 2222A 2222A MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors MPQ2222 MPQ2222A* [u i iip [ip n il nói m i t i NPN Silicon L /S J lf \ i ‘ Motorola Preferred Device NPN r v i. r v i Lil tU 111 UJ LU [ü LÜ MAXIMUM RATINGS Rating MPQ2222A Unit 40