220WATT Search Results

Contextual Info: Intermediate Bus Converter 48Vin, 9.6Vout @ 25A Features • • • • • • • • • • • 48vin, Isolated, 5:1 Fixed Conversion Ratio 9.6v Nominal Out 220watt Max Output @ 36V, 55°C 300watt Max Output @ 55V, 55°C Parallel For Higher Output Power

transistor di 960

Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

LM7805

Abstract: elna 50v BCP56 PTFA082201E PTFA082201F RO4350
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

Contextual Info: PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output

DPSN-220AB-1

Abstract: Delta Electronics dpsN dpsN 12VRTN DPSN-220AB DELTA dpsn 0012 15KV EN61000-4-2 EN61000-4-5
Contextual Info: w w w. d e l t a w w. c o m DPSN-220AB-1 A Series FEATURES Efficiency: Universal input Redundant Power Protection: Power Density: Alarm Signals: 11.5 L x 3 (W) x 1.5 (H) in 3 C MECHANICAL DRAWING >75% before OR-ing Diode Latched mode OVP, OCP & OTP 3 4.25 W/in

a2324

Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

100uf HFK

Abstract: HFK CAPACITOR 100 HFK capacitor
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

12v subwoofer car amp circuits

Abstract: sony subwoofer circuit diagram tone control subwoofer circuit diagram car subwoofer amplifier circuit diagram 100 watts subwoofer circuit diagram 12V mono amplifier 400 watts high subwoofer 100 watts amplifier sony subwoofer car subwoofer power amplifier diagram subwoofer pre circuits
Contextual Info: 3-867-642-11 1 Caractéristiques Emplacement et fonction des commandes 1 MODE (Subwoofer) indicator Indicates HI-CURRENT mode or HI-VOLTAGE mode. 2 POWER/PROTECTOR indicator • OVER CURRENT lights up in green during normal operation. The color will change from green to amber when receiving a powerful signal.

PTFA082201E

Abstract: RO4350 elna 50v elna capacitor BCP56 LM7805 PTFA082201F ceramic capacitor 39 pf A34 rf 35V ELNA Electrolytic capacitor
Contextual Info: PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 – 894 MHz Description The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in

Contextual Info: WADE-2232Q The WADE-2232Q is a rugged and stylish barebones system suitable for embedded applications that stand alone or are rackmounted. Its effective ventilation is achieved by the mesh design of the front panel. No actual tool is needed to release the top cover of chassis,

PTFA092213EL

Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

EJTAG Tiny Tools CPLD

Abstract: TSMC eDRAM ATML U 932 compaq presario ATML 932 Trident plus broadcom Siemens lg Ni1000 temperature sensor Photobit PB-100 irf 3502 SUN HOLD MD-5
Contextual Info: SEMICONDUCTOR TIMES FEBRUARY 1999 FEBRUARY 1999 / 1 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope LTX announced that Accelerix has purchased and taken delivery of a Delta STE, configurable to 512 digital channels, mixed signal instruments and the memory test option. Accelerix, a fabless

CW 7805

Abstract: PTFA092213EL H-34288-6 PTFA092213EL ESD BCP56 LM7805 R250 RO4350 H-33288-6 240-2520-2-ND
Contextual Info: PTFA092213EL PTFA092213FL Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band. These devices feature

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Thermally-enhanced

Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced

100 HFK

Abstract: HFK CAPACITOR 100uf HFK 100 HFK capacitor ELNA capacitor 100 uf 50v diode c723 LM7805 05 330 hfk 8 LM7805 PTFA092211EL
Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

7909 regulator

Abstract: PTFA092213ELV4
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

PTFB092707FH

Contextual Info: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance

GS 9425

Abstract: PTFA092211EL PTFA092211FL package tray design dwg
Contextual Info: Preliminary PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

Southco 52-99-215

Abstract: 52-99-215 Delta Electronics dpsN 130 DPSN Southco dpsn-220ab DPSN 96 DPSN-220AB A EN61000-4-2 EN61000-4-5
Contextual Info: w w w. d e l t a w w. c o m DPSN-220AB A Series FEATURES Efficiency: >75%@full load, min. line Universal input Redundant Power Protection: Latched mode OVP, OCP & OTP Harmonic: EN61000-3-2 class D PF>0.97@full load, nominal line 3 Power Density: 4 W/in Alarm Signals:

Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power ampliier

MENB1030

Contextual Info: External Power Supply International Efficiency Level V ErP Phase 2 By Maggie Nadjmi March 16th 2011 Background More than one billion external power supplies are sold worldwide each year Majority of these supplies are used to convert the high voltage AC to the low

elna 50v

Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350
Contextual Info: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced