PTFB092707FH Search Results
PTFB092707FH Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PTFB092707FH-V1-R0 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37288L-4 | Original | 424.35KB | |||
| PTFB092707FHV1R0XTMA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37288L-4 | Original | 424.66KB | |||
| PTFB092707FH-V1-R250 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 424.35KB | |||
| PTFB092707FHV1R250XTMA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 429.15KB |
PTFB092707FH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PTFB092707FHContextual Info: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. |
Original |
ptfb092707fh270-watth-37288l-4/2 | |
PTFB092707FHContextual Info: PTFB092707FH advance specification Description advance specification Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 925 – 960 MHz Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance |
Original |
ptfb092707fh220-watt | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
Original |
ptva093002tc960mhz758mhzpxac201602fc+6 |