22010 Search Results

Cree Microwave

Abstract: CRF-22010 CRF-22010-001 CRF-22010-101 silicon carbide
Contextual Info: CRF-22010-001 CRF-22010-101 MICROWAVE 10 W SiC RF Power MESFET CASE STYLE 001 CRF-22010-001 Features Applications • 12 dB Small Signal Gain • 10 W Minimum P1dB • 48 V Operation • High Breakdown Voltage • High Temperature Operation • Up to 3 GHz Operation

Cree Microwave

Abstract: CRF-22010-101 CRF-22010 CRF-22010-001
Contextual Info: CRF-22010-001 CRF-22010-101 10 W SiC RF Power MESFET Features Applications • • • • • • • • • • • • 12 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 3 GHz Operation High Efficiency

TRANSISTOR SUBSTITUTION

Abstract: tba 2003 capacitor j4 22010 TRANSISTOR SUBSTITUTION DATA BOOK 08051C222MAT2A 12061C104MAT2A CRF-22010 CRF-22010-TB RO4003
Contextual Info: CRF-22010-TB Evaluation Board for CRF-22010 Version A Narrowband Features • • • • • • Ready-to-Go RF Amplifier Requires Two Power Supplies Externally Adjustable Gate Bias Voltage Solderless Transistor Changeout Includes Heat Sink, Fan, and Wiring Harness

Contextual Info: Products | eCatalog | Brands | Industries | eCommerce | Customer Service | About | Home Current Brand View Home Text Search Alternate Part Search Multiple Part Comparison

Contextual Info: MMA-22010 2-20 GHz GaAs MMIC Amp-Chip Advanced Product Information June 2006 Features: • Single Bias +4V, 60mA Operation • Input/Output 50-Ohm Matched • On-Chip Output DC Blocking • On-Chip DC Bias RF Choke and Bypass Cap • Gain: 7.5 dB • P1dB: 11dBm

Contextual Info: MMA-22010 2-20 GHz GaAs MMIC Amp- Chip Advanced Product Information 11/2005 Features Single Bias +4V, 60mA Operation Input/Output 50-Ohm Matched On-Chip Output DC Blocking On-Chip DC Bias RF Choke and Bypass Cap Gain: 7.5 dB P1dB: 11dBm Small Size: 2.35 x 1.5 x0.1 mm

Contextual Info: HJ-22007 / 22010 TWO –WAY 0º POWER DIVIDERS STC Microwave Systems – www.craneae.com 28 Tozer Road • phone: 978-524-7200 • Beverly, MA 01915 email: electronics@craneae.com Revision HJ-22007/220102005 082505

HJ-22007

Abstract: HJ-22010
Contextual Info: HJ-22007 / 22010 2 to 100 MHz Two-Way 0˚ Power Dividers ISOLATION vs. FREQUENCY 30 -0.5 35 40 45 50 55 25 50 75 18 RETURN LOSS dB INSERTION LOSS (dB) ISOLATION (dB) RETURN LOSS vs. FREQUENCY INSERTION LOSS vs. FREQUENCY 0.0 0.5 1.0 23 28 33 38 1.5 100 125

D7420

Contextual Info: SAW Bandpass Filter 220101B 1. Features z For CDMA Basestation Receiver z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 2. Package Dimension 15.2±0.2 5.1±0.2

Contextual Info: PICO’S T SERIES Plug-In PICO PART NUMBER T-Saiita Plot-la PRIMARY IMPEDANCE 0HM8 T-22003 T-22005 20 ct 20 ct Set 2 20 ct T-22010 32 Ct 40 ct 32 ct 40 ct 5 8 48 Ct 50 ct 16 cl 50 cl 32 ct T-22015 T-22018 T-22020 T-22025 T-22028 T-22030 All units manufactured to MIL-T-27,

81348

Contextual Info: ASP-22010-01 - 1 . 3 5 0 R E F - NOTES: {12 1. USE ASP-81348-01 HIGH TEMP BODY. 2. T E R M IN A LS TO BE FLUSH BELOW TOP OF SHROUD. 3. PARTS TO BE B U L K POS. x .100$ + .150 TO . 0 1 0 1 .2 50 ({1 2 PACKAGED. .100 REF J □ □

CRF-22010

Abstract: CRF-22010-001 CRF-22010-101 155958
Contextual Info: CRF-22010-001 CRF-22010-101 10 W SiC RF Power MESFET Features Applications • • • • • • • • • • • • 12 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 3 GHz Operation High Efficiency

Contextual Info: 22010A IVinbond Electronics Corp. 256K X 4 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W 22010A is a high speed, low power CMOS static RAM organized as 262144 x 4 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond’s high

maxon DC 12V

Abstract: Crosspoint Switches
Contextual Info: síiconsiiskms SSI 22101/22102 CMOS 4x4x2 Crosspoint Switches with Control Memory INNOVATORS IN / INTEGRATION Data Sheet GENERAL DESCRIPTION The SSI 22101 and 22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints transmission gates , 4-line

parker o-ring 2-016

Abstract: parker o-ring N674-70
Contextual Info: Geo-Marine Connectors 220-00 and 220-10 Bulkhead Connector Receptacle Assemblies Front Mounted Jam-Nut 220-00: 1.32 33.5 Max 220-10: 1.57 (39.9) Max Master Key E Flats .75 (19.1) Ref. B Thread Master Key Indicator Red Slot Piston O-Ring Direction of Pressure

SBAS446F

Contextual Info: ADS1282-HT AD S1 282 SBAS446F – DECEMBER 2009 – REVISED AUGUST 2011 www.ti.com HIGH-RESOLUTION ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS1282-HT FEATURES 1 • • • • • • • • • • High Resolution: 122-dB SNR 250 SPS, High-Resolution Mode, 210°C

Contextual Info: ADS1282 www.ti.com SBAS418G – SEPTEMBER 2007 – REVISED MAY 2010 High-Resolution Analog-to-Digital Converter Check for Samples: ADS1282 FEATURES DESCRIPTION • The ADS1282 is an extremely high-performance, single-chip analog-to-digital converter ADC with an

B85 diode

Contextual Info: ADS1281 AD S 12 81 www.ti.com SBAS378D – AUGUST 2007 – REVISED JUNE 2010 High-Resolution Analog-to-Digital Converter Check for Samples: ADS1281 FEATURES DESCRIPTION • The ADS1281 is an extremely high-performance, single-chip analog-to-digital converter

Contextual Info: Gleichrichterdioden-Brücken Rectifier diode bridges Ponts redresseurs Typ V rrm V rms I fsm Type V B 40.C, 800 SI, „ Ä ä P D - '' B 80 Ç 800 Si, .D, .SD ^ V B f » C £00 Si, .D, .SD * B 380 C 800 Si, .D. .SD : 40 B 380 C 1000 Si 80 125 R /C

usb modem e153

Abstract: IBM POWER3 processor 40A00000 E20A package Foot Pattern 41L6173 E212 mca date sheet of btu 25C38 20EE0007 e174
Contextual Info: RS/6000 44P Series Model 170 Service Guide SA38-0560-01 Second Edition October 2000 Before using this information and the product it supports, read the information in “Safety Notices” on page xi, “Appendix A. Environmental Notices” on page 267, and “Appendix B. Notices” on page 269.

selen-gleichrichter

Abstract: Halbleiterbauelemente DDR selengleichrichter selenkleinstgleichrichter "halbleiterwerk frankfurt" Kombinat VEB A 301 RG 403 halbleiterwerk Halbleiterwerk Frankfurt ddr veb
Contextual Info: CD AUSGABE GO 1971 I 5 2 CD • M H CD CD CD ■ SELEN­ FREIFLÄCHEN­ GLEICHRICHTER Kombinat VEB Halbleiterwerk Frankfurt Oder Gleichrichterwerk Großräsdien Information 20-1-71 Änderungen der allgemeinen und tech­ nischen Angaben, die durch die Weiter­

APT30DQ60K

Abstract: APT30DQ60KG APT30GT60BR
Contextual Info: 600V 30A APT30DQ60K APT30DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: 1/2 002-01 / 20050506 / e9146_zgb_01u.fm EMC Components ZGB-01U Series EMC Filters for AC Power Line For Single-phase, Small-size Box Cased FEATURES • These small and lightweight metal-cased EMC filters provide excellent EMC attenuation characteristics for differential mode

pyle-national

Abstract: c015 10D006 Kontakte crimp Werkstoff HN020160002 Amphetronix female connector 10F006 f006 amphenol 451
Contextual Info: Amphenol Amphenol-Tuchel Electronics GmbH Rundsteckverbinder C 015 Circular Connectors C 015 Rundsteckverbinder entspricht EN 17 5000 DIN 43 563 Circular Connector according to EN 17 500 (DIN 43 563) Die Rundsteckverbinder der Serie C 015 entsprechen den Anforderungen der