2200 PF Search Results

nec j137

Abstract: J137 nec j297 UPB586G divide-by-256 uPB586 BF08 UPB586B UPB586G-E1 Vcc, pin 4
Contextual Info: 2.5 GHz DIVIDE- BY- 512/256 PRESCALER UPB586B UPB586G TEST CIRCUIT FEATURES • HIGH FREQUENCY OPERATION TO 2.5 GHz VCC M • WIDE BAND OPERATION 2200 pF* • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% 2200 pF 1 8 2 7 3 6 4 5 2200 pF 2200 pF INPUT • AVAILABLE IN TAPE AND REEL

Contextual Info: LED P A R T NUMBER and L E G E N D POSITION 1 * REV COLOR POSITION POSITION 2 564-2200-101F RED 564-2200-202F GREEN NON-DIFFUSED * 564-2200-222F GREEN NON-DIFFUSED GREEN N O N - D 1FFU S ED 564-2200-223F GREEN NON-DIFFUSED GREEN NON-DIFFUSED YELLOW NON-DIFFUSED

D1U4CS-W-2200-12-HC4C

Abstract: ps_kill
Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

FCI 51732

Abstract: vsb 48 smb ps_kill POWER SUPPLY BOARD 94V0 120 12v POWER SUPPLY BOARD 94V0
Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hot-swapping redundant systems. The main output is 12V and standby output of 5V. Packaged in 1U low profile, it is designed

Contextual Info: D1U4CS-W-2200-12-HxxC Series AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hotswapping redundant systems. The main output is 12V with standby output of 5V or 3.3V. Packaged in 1U low profile,

Contextual Info: D1U4CS-W-2200-12-HxxC Series www.murata-ps.com AC/DC Front End Power Supply PRODUCT OVERVIEW The D1U4CS-W-2200-12-HxxC is a 2200 Watt, power-factor-corrected PFC front-end power supply for hot-swapping redundant systems. The main output is 12V with a standby output of 5V or 3.3V. Packaged in a 1U low profile

DNA30EM2200PC

Abstract: DNA30E2200PC DNA30E2200FE DNA30E2200PA
Contextual Info: DNA 30 EM 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 EM 2200 PC 1 2 3 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

Contextual Info: KEMET Part Number: HT13CN222JC Capacitor, ceramic, 2200 pF, +/-5% Tol, 100V, C0G L General Information LL Manufacturer: F KEMET Specifications D Capacitance: 2200 pF Temperature Coefficient: C0G Voltage: 100V Tolerance: +/-5% Body Type: Termination Type: Axial Molded

DNA 30 E 2200 PA

Abstract: DNA30E2200FE DNA30E2200PC 090 DNA DNA30E2200 marking code 2hv
Contextual Info: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

marking 406 diode -rectifier

Abstract: DNA30E2200FE 090 DNA DNA30E2200 DNA30E2200PA DNA30E2200PC
Contextual Info: DNA 30 E 2200 PC tentative VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA30E2200PC

Abstract: DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

XR2200

Abstract: XR-2200 XR2200CP XR-1489 transistor A 1568
Contextual Info: TSr EXAR XR-2200 Hammer Driver FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2200 is an array of five Darlington transistor pairs which are capable of driving high-current loads such as solenoids, relays, and LED ’s. Each of the five circuits contained on the XR-2200 is capable of sinking

DNA30E2200FE

Abstract: DNA30E2200PA DNA30EM2200PC
Contextual Info: DNA 30 E 2200 FE V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 FE 5 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DNA MARKING CODE

Abstract: DNA30E2200PA DNA30E2200PC DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PA V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

B40C3700-2200

Abstract: B380C3700/2200 B40C B40C3700/2200 bridge rectifier diodes BRIDGE-RECTIFIER B250C B40C3700/2200 BRIDGE-RECTIFIER B40C B125C B250C B380C
Contextual Info: B40C3700/2200 – B500C3700/2200 WTE Pb POWER SEMICONDUCTORS 3.7A SINGLE-PHASE BRIDGE RECTIFIER Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability High Case Dielectric Strength Ideal for Printed Circuit Boards

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

ros2200

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-2200+ 1200 to 2200 MHz Features • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications • • • • Satellite systems Wireless communication Radar Personal communication systems

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-2200+ 1200 to 2200 MHz Features • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications • • • • Satellite systems Wireless communication Radar Personal communication systems

ROS-2200

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-2200+ 1200 to 2200 MHz Features • High power output, +7dBm typ. • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $24.95 ea. QTY 5-49 Applications • • • • Satellite systems Wireless communication

Q3236

Abstract: PE9601 PE9601EK 9601-11 96011
Contextual Info: Product Specification PE9601 2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2200 MHz. The device is designed for superior phase noise performance while

Contextual Info: VCO Product Specification Model: VCO190-2250T Rev: B Date: 4/21/2003 Customer: SIRENZA MICRODEVICES, INC. Operating Temperature Range: Parameter Frequency Range - Min Typ Max Units X 2200 2250 2300 MHz X 1 1.6 -35 ° to 85 ° C Remarks Tuning Voltage: 2200 MHz

DNA30E2200PA

Abstract: DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number 3 1 Backside: anode Features / Advantages: Package: Applications: Housing: TO-263 D2Pak Diode for main rectification For single and three phase

Contextual Info: DATA SHEET SKY66001-11: 2100 to 2200 MHz, +19 dBm Linear Power Amplifier Applications Description • Residential femtocells The SKY66001-11 linear Power Amplifier PA is a fully matched surface mount module developed for WCDMA applications operating from 2100 to 2200 MHz. The device meets the stringent