21JAN2011 Search Results

CSD16325Q5

Abstract: G003
Contextual Info: CSD16325Q5 www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16325Q5 FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

CSD16406Q3

Abstract: G003
Contextual Info: CSD16406Q3 www.ti.com SLPS202A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16406Q3 FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

CSD16321Q5C

Abstract: G003 CSD16321
Contextual Info: CSD16321Q5C www.ti.com SLPS242B – DECEMBER 2009 – REVISED MAY 2010 DualCool N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16321Q5C FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY DualCool™ Package SON 5x6mm Optimized for Two Sided Cooling

2SB1116A

Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
Contextual Info: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base

STM32F103VC

Abstract: STM32F103RC STM32F103xE STM32F10* I2C errata 548-72 STM32F103ZD USART STM32F101RC STM32F101RD stm32f103ve errata
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E high-density device limitations Silicon identification This errata sheet applies to the revisions Z and Y of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density

DS1220

Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

Contextual Info: CSD16401Q5 www.ti.com SLPS200A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET Check for Samples: CSD16401Q5 FEATURES 1 • • • • 2 PRODUCT SUMMARY Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated SON 5-mm x 6-mm Plastic Package

Contextual Info: TPA2026D2 YZH www.ti.com SLOS649A – MARCH 2010 – REVISED JANUARY 2011 3.2-W/Ch Stereo Class-D Audio Amplifier with Fast Gain Ramp SmartGain AGC/DRC Check for Samples: TPA2026D2 FEATURES DESCRIPTION • • • • • • • • • • The TPA2026D2 is a stereo, filter-free Class-D audio

Contextual Info: CSD17311Q5 www.ti.com SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples: CSD17311Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance

Contextual Info: TLV277x, TLV277xA FAMILY OF 2.7ĆV HIGHĆSLEWĆRATE RAILĆTOĆRAIL OUTPUT OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS209G − JANUARY 1998 − REVISED FEBRUARY 2004 D D D D D D D D D D D D D High Slew Rate . . . 10.5 V/µs Typ High-Gain Bandwidth . . . 5.1 MHz Typ

camera viewfinder lcd

Abstract: graphic lcd panel cpld example DM3725 gpmc emmc 5.0
Contextual Info: DM3730, DM3725 www.ti.com SPRS685C – AUGUST 2010 – REVISED JANUARY 2011 DM3730, DM3725 Digital Media Processors Check for Samples: DM3730, DM3725 1 DM3730, DM3725 Digital Media Processors 1.1 Features 123456 • DM3730/25 Digital Media Processors: – Compatible with OMAP 3 Architecture

Contextual Info: CSD16401Q5 www.ti.com. SLPS200 – AUGUST 2009 N-Channel NexFET Power MOSFET

PD70100

Abstract: power mosfet catalogue PD70100ILD-TR PD70200 PD70100ILD
Contextual Info: PD70100 & PD70200 IEEE 802.3af/at PD Front End IC TM P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION The PD70100 and PD70200 devices are part of Microsemi’s series of Power over Ethernet PoE Powered Devices chips (PD). The PD70100 and PD70200

Contextual Info: CSD17304Q3 www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17304Q3 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance

Contextual Info: CSD16325Q5C www.ti.com SLPS237B – DECEMBER 2009 – REVISED APRIL 2010 DualCool N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5C FEATURES 1 • • • • • • • • 2 PRODUCT SUMMARY DualCool™ Package SON 5x6mm Optimized for 2-Sided Cooling

Contextual Info: CSD16406Q3 www.ti.com SLPS202A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16406Q3 FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

Contextual Info: CSD16414Q5 www.ti.com SLPS208A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET Check for Samples: CSD16414Q5 FEATURES 1 • • • • • • • 2 PRODUCT SUMMARY Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating

Contextual Info: CSD16408Q5 www.ti.com SLPS228A – OCTOBER 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET FEATURES 1 • • • • 2 PRODUCT SUMMARY Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated SON 5-mm x 6-mm Plastic Package APPLICATIONS

CSD16401Q5

Abstract: G003
Contextual Info: CSD16401Q5 www.ti.com SLPS200A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET Check for Samples: CSD16401Q5 FEATURES 1 • • • • 2 PRODUCT SUMMARY Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated SON 5-mm x 6-mm Plastic Package

Contextual Info: REG710 www.ti.com. SBAS221G – DECEMBER 2001 – REVISED JANUARY 2009 60mA, 5.0V, Buck/Boost Charge Pump in ThinSOT-23 and ThinQFN

dhrystone

Abstract: emmc pin 4AA6
Contextual Info: DM3730, DM3725 www.ti.com SPRS685C – AUGUST 2010 – REVISED JANUARY 2011 DM3730, DM3725 Digital Media Processors Check for Samples: DM3730, DM3725 1 DM3730, DM3725 Digital Media Processors 1.1 Features 123456 • DM3730/25 Digital Media Processors: – Compatible with OMAP 3 Architecture

Contextual Info: TPD3F303 www.ti.com SLVSAM5 – JANUARY 2011 EMI FILTER WITH INTEGRATED VCC CLAMP FOR SIM CARD INTERFACE Check for Samples: TPD3F303 FEATURES 1 • • • • • Bidirectional EMI/RFI Filtering and Line Termination with Integrated ESD Protection Robust ESD Protection Exceeds IEC 61000-4-2

Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

SN74LVTH16652-EP

Contextual Info: SN54LVTH16652, SN74LVTH16652 3.3-V ABT 16-BIT BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCBS150K – JULY 1994 – REVISED APRIL 1999 D D D D D D D D D D D D Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V