21F1A Search Results

2-21F1A

Contextual Info: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03

2-21F1A

Contextual Info: 2-21F1A Uniti m Jan,2003

2SC3280

Abstract: 2-21F1A 2SA1301
Contextual Info: 2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

2SC3281

Abstract: 2SA1302 transistor 2sc3281 transistor 2-21F1A 2SA1302
Contextual Info: 2SA1302 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SC3281 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

2sc3281 transistor

Abstract: 2SA1302 transistor 2SC3281 2SC3281 data sheet 2-21F1A 2SA1302
Contextual Info: 2SC3281 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1302 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

2SC3280

Abstract: 2SA1301 2-21F1A
Contextual Info: 2SC3280 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1301 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage

2-21F1A

Contextual Info: S-EIFIA Uniti nn 5. 45±0. 15 5. 45±0. 15 S? sO O Nane JEDEC EIAJ Toshiba Discrete Seniconductor Integrated Circuit TD-3PCL - 2-21F1A - Jan.2003

Contextual Info: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS 2 5 3 4 fS6 1. Collector1 C1 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)

Contextual Info: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage

Contextual Info: MT6L05FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L05FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S05T MT3S05FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04

Contextual Info: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO

Contextual Info: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic

Contextual Info: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded

Contextual Info: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

MT6L76FS

Contextual Info: MT6L76FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L76FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S06FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead Pb -free.

IC MARKING 1005 5 pin

Contextual Info: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.

Q213

Contextual Info: MT6L72FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L72FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S36FS MT3S11AFS Maximum Ratings (Ta = 25°C)

MT3S05FS

Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
Contextual Info: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:

transistor TO-3P Outline Dimensions

Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
Contextual Info: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,

MT6L77FS

Contextual Info: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded

Contextual Info: MT6L67FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L67FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S36FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded