21DEC04 Search Results

Contextual Info: 1 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 16 LTR DESCRIPTION N USE DATE REV PER 0S14-0338-04- WITH DWN APVD JDP JL 21DEC04 P R O - C R IM P E R D D S E E S E P E R A T E R E S T R IC T E D C U S T O M E R

Deutsch Relays

Abstract: electromagnetic relay M5757/23-001 58614 relay m5757 M5757/23-005 m5757 relay 58614 deutsch relays inc CII 58614
Contextual Info: QPL-5757-100 21-Dec-04 SUPERSEDING QPL-5757-99 30-Jan-03 QUALIFICATIONS VALIDATED EVERY TWO YEARS QUALIFIED PRODUCTS LIST OF PRODUCTS QUALIFIED UNDER MILITARY SPECIFICATION MIL-R-5757 RELAY, ELECTROMAGNETIC GENERAL SPECIFICATION FOR Effective 15 October 1998, MIL-R-5757 has been declared "Inactive for New Design" with no superseding specification.

THE M48Z

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

Contextual Info: VTS40100CT VISHAY Vishay Semiconductors New Trench Technology Schottky Barrier Rectifier Ultra Low VF = 0.375 V @ IF = 5 A TO-220AB Major Ratings and Characteristics 2 x 20 A 100 V IFSM 250 A VF @ IF = 20 A 0.61 V TJ max. 150 °C Features • • • • •

VTS40100CT

Contextual Info: VTS40100CT VISHAY Vishay Semiconductors New Trench Technology Schottky Barrier Rectifier Ultra Low VF = 0.375 V @ IF = 5 A TO-220AB Major Ratings and Characteristics 2 x 20 A 100 V IFSM 250 A VF @ IF = 20 A 0.61 V TJ max. 150 °C Features • • • • •

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. m m - ] - , - n 0 0 0 0 D .52 l j § .08 \ HOUSING SEE TABLE FOR PERT NO □ II POSITION #1 INDICATOR (FARSIDE) □ _._□ _

M48Z512A

Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

1N5817

Abstract: AN1012 M48Z512A M48Z512AV M48Z512AY M48Z512BV M68XXX
Contextual Info: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of