217A MARKING Search Results

Hitachi DSA00279

Contextual Info: Hitachi Single-Chip Microcomputer H8S/2215 Series Hardware Manual ADE-602-217A Rev. 2.0 02/20/02 Hitachi Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS
Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS =Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

62A50

Contextual Info: PD - 95404 IRL1104PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V

Contextual Info: PD - 95404 IRL1104PbF Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 40V

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03 28BE
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated

IRL1104

Contextual Info: PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated Description ● D VDSS = 40V RDS on = 0.008Ω

AN-994

Abstract: IRL1104 IRL1104L IRL1104S
Contextual Info: PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL1104S l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1104SPbF IRL1104LPbF l HEXFET Power MOSFET

91805

Abstract: irl110 IRL1104
Contextual Info: PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated Description ● D VDSS = 40V RDS on = 0.008Ω

AN-994

Abstract: IRL1104 IRL1104L IRL1104S
Contextual Info: PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL1104S l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1104SPbF IRL1104LPbF l HEXFET Power MOSFET

IRL1104

Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-177-32 IRL1104 HEXFET TO-220 PD -91805 IRL1104 HEXFET Power MOSFET Logic-Level Gate Drive ● Advanced Process Technology

AN-994

Abstract: IRL1104 IRL1104L IRL1104S
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-177-40 IRL1104S HEXFET D2Pak PD -91840 IRL1104S/L PRELIMINARY l l l l l l l Logic-Level Gate Drive Advanced Process Technology

DIODE CQ 618

Abstract: MOSFET IRL AN-994 IRL1104 IRL1104L IRL1104S marking dmx diode
Contextual Info: International 3BR Rectifier • • • • • • • PD'91840 IR L1104S /L PRELIMINARy HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175 °C Operating Temperature Fast Switching

AN-994

Abstract: IRL1104 IRL1104L IRL1104S
Contextual Info: PD -91840 IRL1104S/L PRELIMINARY l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 40V

diode 838

Abstract: 217a IRF 3445 AN-994 IRL1104 IRL1104L IRL1104S
Contextual Info: PD -91840 IRL1104S/L PRELIMINARY l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 40V

Contextual Info: StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET  Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications

Contextual Info: TLC59711 www.ti.com SBVS181A – OCTOBER 2011 – REVISED JULY 2012 12-Channel, 16-Bit, Enhanced Spectrum PWM, RGB, LED Driver with 3.3-V Linear Regulator and Watchdog Timer Check for Samples: TLC59711 FEATURES APPLICATIONS • • • • 1 • • • •

Contextual Info: TLC5971 www.ti.com SBVS146C – AUGUST 2010 – REVISED SEPTEMBER 2012 12-Channel, 16-Bit, Enhanced Spectrum, PWM, RGB, LED Driver with 3.3-V Linear Regulator Check for Samples: TLC5971 FEATURES APPLICATIONS • • • • 1 • • • • • • • •

HBM 00-01H

Abstract: RGB LED Cluster
Contextual Info: TLC5971 www.ti.com SBVS146C – AUGUST 2010 – REVISED SEPTEMBER 2012 12-Channel, 16-Bit, Enhanced Spectrum, PWM, RGB, LED Driver with 3.3-V Linear Regulator Check for Samples: TLC5971 FEATURES APPLICATIONS • • • • 1 • • • • • • • •

Neltron 2317sj

Abstract: Neltron 2218H Neltron 4403 4401 neltron Neltron 5504f1 Neltron 1223 Neltron 2218h Neltron 2214S 2200SA
Contextual Info: 25 HOW TO ORDER 5 5 0 4 F 1 —X X S - 0 2 —0 3 l HIGH QUALITY SELECTIVE GOLD - R I V E T W/BOARD L O CK /H EX SCREW — FEMALE — NO. OF POSITIONS — 8 .08M M FOOTPRINT 4155464 D Sub RA PCB Socket 9 Way 26 4155476 D Sub RA PCB Socket 15 Way 27 4155488

QQ-B-654

Abstract: MIL-PRF-680 Ultrasonic Atomizing Transducer JAN-5727 Ultrasonic Atomizing Transducer circuit MIL-DTL-1222 Isopropyl Alcohol TT-I-735 grade A or B ultrasonic atomizer J-STD-006 electronic grade solder alloys electromagnetic bomb
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 July 2002. MIL-STD-202G 8 February 2002 SUPERSEDING MIL-STD-202F 1 APRIL 1980 DEPARTMENT OF DEFENSE TEST METHOD STANDARD ELECTRONIC AND ELECTRICAL COMPONENT PARTS

Contextual Info: CMT2210/17AW CMT2210/17AW Low-Cost 300 – 960 MHz OOK Stand-Alone RF Receiver Features Applications   Low-Cost Consumer Electronics Applications  Very Easy Development with RFPDK  Home and Building Automation  All Features Programmable 