2160 TRANSISTOR Search Results

DDX-2160

Abstract: DDX-8000 ddx8228 DDX-2100 DDX-8001 500 watts stereo power amplifier diagram 2100 330uF 35V capacitor eia0603 ddx2160
Contextual Info: DDX-2160/DDX-2100 All-Digital High Efficiency Power Amplifiers FEATURES • • • 1.0 GENERAL DESCRIPTION HIGH OUTPUT CAPABILITY DDX Mono-Mode: * * * DDX-2160: 1 x 160 / 125 W, 3Ω, <10% / <1% THD DDX-2160: 1 x 150 / 120 W, 4Ω, <10% / <1% THD DDX-2100: 1 x 130 / 100 W, 4Ω, <10% / <1% THD

DDX-2160

Abstract: ddx-8228 DDX-2100 DDX-8000 DDX-2120 8229 ddx8000 ddx8228 ddx2160 Apogee
Contextual Info: DDX-2160/DDX-2120/DDX-2100 All-Digital High Efficiency Power Amplifiers FEATURES • • • • * * * DDX-2160: 1 x 160 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2120: 1 x 125 / 150 W, 3Ω / 4Ω, < 10% THD DDX-2100: 1 x 100 / 130 W, 3Ω / 4Ω, < 10% THD * *

transistor 8026

Abstract: 2SC5245 FH105
Contextual Info: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2

2SC5245

Abstract: FH105 IT00323 transistor 8026
Contextual Info: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

2SC5245

Abstract: 2SC5415 FH203 IT00483 18896
Contextual Info: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

IT00483

Abstract: 2SC5245 2SC5415 FH203 IT00491
Contextual Info: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

5000w audio circuit design

Abstract: AN2160 B380-13-F GRM188R71A154KA01D tvs 5000w 5.0smdj Infineon Power Management Selection Guide 2011
Contextual Info: National Semiconductor Application Note 2160 Michael Hartshorne August 2, 2011 Introduction PCB Features The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems.

Contextual Info: User's Guide SNVA487A – August 2011 – Revised April 2013 AN-2160 LM5066 Evaluation Board 1 Introduction The LM5066EVK evaluation board provides the design engineer with a fully functional intelligent monitoring and protection controller board designed for positive voltage systems. This application note

Q24060

Abstract: transistor D1303 m1-6116 Q24008
Contextual Info: ADVANCE DEVICE SPECIFICATION Q24000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q24000 Series of BiCM OS logic arrays is comprised of six products with densities of 760, 2160, 5760, 9072, 13,440 and 27,520 equivalent gates. The series is optimized to provide CM OS densities with

H157D1

Abstract: D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B
Contextual Info: PRELIMINARY DEVICE SPECIFICATION Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM CC Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760, 9072 and 13,440 equivalent gates. The series is optimized to provide CMOS densities with b ip ola r perform ance

CC650

Abstract: UTC A11 ECL IC NAND
Contextual Info: A R rP nR cFLI i i IvMi iIi M NM n Yi DEVICE SPECIFICATION Zs /A / zj - L rF=ü r=û [Ml IMI — — n Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM C C Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760,

flip flop tipo d

Abstract: MUX157 Q14000B Q2100B Q28000B Q6000B Q9100B ML-02-L
Contextual Info: 57E D • OfifiTODE 0 0 0 0 55 0 S ■ AMCC A P P L I E D MI C R O C I R C U I T S DEVICE SPECIFICATION T-V2-/I-JST Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q14000 Series of BiCMOS logic arrays is comprised of five products with densities of 2160,

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF21085

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

j686

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

n channel MOSFET 45 w 10 v

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

wb4 marking

Abstract: J152 mosfet transistor 2110 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MOTOROLA J210

Abstract: MRF21085
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

mosfet 400 mhz

Abstract: MRF21045
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

j686

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

NJM 78L08UA-ND

Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,