211C Search Results

PGA211-C-S17U-1

Contextual Info: PIN GRID ARRAY PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 211 PIN CERAMIC To Top / Package Lineup / Package Index PGA-211C-A01 EIAJ code :∗PGA211-C-S17U-1 211-pin ceramic PGA Number of pins 211 Lead pitch 100 mil Pin matrix 17 Sealing method Metal seal PGA-211C-A01

Contextual Info: Ordering number : ENA2146 STK760-211C-E Thick-Film Hybrid IC Single-phase rectification Active Converter Hybrid IC http://onsemi.com Overview This IC is average current control type Active Converter Hybrid IC for power factor improvement of single-phase AC

FCI sicma

Abstract: 211CC2S2190 FCI sicma 2 Sicma 211CC2S1190 sicma 2 211CC FCI SICMA female Terminal
Contextual Info: Product Detail Page Direct Links Page 1 of 2 . Start > Search=211CC2S1190* > 211CC2S1190 211CC2S1190 Cross Reference Assistant Add to Favorites RoHS/LF P/N search Document & Drawing search 211CC2S1190 Application tooling Services Sicma 150 female 1.5 mm terminal

342GH120-211CTV

Contextual Info: SKiiP 342GH120-211CTV .  ; %1 <       6  Absolute Maximum Ratings Symbol Conditions IGBT =! = &* =! 9    ?   @    ; %1 $#* < Values Units &%## A## B %# = = = ## )%%1*  (## )%%1* %&"#   Inverse diode SKiiP 2

211ft0278

Abstract: 211cc2s1120
Contextual Info: R =F R =C C D #0.012 D #0.15 3.30 B 1.40 #0.25 1.90 A E D-D F 3.40 +0.10 -0.05 K B 2.40 +0.20 -0.35 7.30 SECTION A-A SECTION B-B #0.10 24.6 ) SECTION F-F MVL Rev. DELPHI Rev. Pré-étamé / Pre-tinned 211CC2S1120 C 10738188 01 211CC2S2120 C 10726212 Post-doré / Post-golded

5A IGBT

Abstract: stk760
Contextual Info: Ordering number : ENA2146 Thick-Film Hybrid IC STK760-211C-E Single-phase rectification Active Converter Hybrid IC Overview This IC is average current control type Active Converter Hybrid IC for power factor improvement of single-phase AC power supply, that containing power devices of step-up active converter, control IC over-current and over-voltage

1N3168

Abstract: 1N3164 1N3170 1N3172 1N3174 1N3175 1N3176 1N3177 211C
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 March 2010. MIL-PRF-19500/211C 10 December 2009 SUPERSEDING MIL-PRF-19500/211B 18 May 1983 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

PGA211-C-S17U-1

Contextual Info: PIN GRID ARRAY PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 211 PIN CERAMIC PGA-211C-A01 EIAJ code :∗PGA211-C-S17U-1 211-pin ceramic PGA Number of pins 211 Lead pitch 100 mil Pin matrix 17 Sealing method Metal seal PGA-211C-A01 211-pin ceramic PGA (PGA-211C-A01)

211CL3S2120

Contextual Info: Références Etat / State MVL 11.60 REF. +0.25 N -0.25 P MVL Rev. DELPHI Rev. MVL Rev. DELPHI Rev. 211CL3S3120 B 10738202 01 211CL3S1120 B 10738582 01 211CL3S2120 B 10738201 02 Post-doré / Post-golded 0.2µ int/ext 211CL3S1220 B 33501963 01 211CL3S2220 B

211C

Contextual Info: version 2.0 Ltp: tft028 VI TELEFILTER 16.06.2003 Application Note TFS 211C 1/2 1. General The filter is symmetrical, i.e. input and output are exchangeable with each other. The filter shall be driven single ended. If it is intended to the filter in an balanced environment this can be

Contextual Info: Ordering number : ENA2146 STK760-211C-E Thick-Film Hybrid IC Single-phase rectification Active Converter Hybrid IC Overview This IC is average current control type Active Converter Hybrid IC for power factor improvement of single-phase AC power supply, that containing power devices of step-up active converter, control IC over-current and over-voltage

342GH120-211CTV

Contextual Info: SKiiP 342GH120-211CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

PGA211-C-S17U-1

Contextual Info: PIN GRID ARRAY PACKAGE 211 PIN CERAMIC PGA-211C-A01 EIAJ code : ∗PGA211-C-S17U-1 Number of pins 211 Lead pitch 100mil Pin matrix 17 Sealing method Metal seal 211-pin ceramic PGA PGA-211C-A01 211-pin ceramic PGA (PGA-211C-A01) 27.43 (1.080) SQ REF 0.51 ± 0.13

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

TIM0910-20

Contextual Info: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

Contextual Info: TOSHIBA TIM0910-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 9.5 GHz to 10.5 GHz • High gain - G1dB = 6.0 dB at 9.5 GHz to 10.5 GHz • Broadband internally matched • Hermetically sealed package

TIM1213

Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET

EL 817 C108

Abstract: HDMI I2C
Contextual Info: AM3874, AM3872, AM3871 www.ti.com SPRS695A – SEPTEMBER 2011 – REVISED MARCH 2012 AM387x Sitara ARM Processors Check for Samples: AM3874, AM3872, AM3871 1 High-Performance System-on-Chip SoC 1.1 Features • High-Performance Sitara™ ARM® Processors

DM8148 GMII

Abstract: SPRS647 TMS320DM8146 OPP166 TMS320DM814x GP321 lpddr4 implementing pcb layout on tms320dm814x amplifier HS 9004
Contextual Info: TMS320DM8148, TMS320DM8147, TMS320DM8146 SPRS647C – MARCH 2011 – REVISED JANUARY 2012 www.ti.com TMS320DM814x DaVinci Digital Media Processors Check for Samples: TMS320DM8148, TMS320DM8147, TMS320DM8146 1 High-Performance System-on-Chip SoC 1.1 Features

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

Contextual Info: SM320C6455-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR Data Manual JANUARY 2008 SPRS462B SM320C6455-EP FIXED-POINT DIGITAL SIGNAL PROCESSOR Data Manual Literature Number: SPRS462B SEPTEMBER 2007 – Revised JANUARY 2008 PRODUCTION DATA information is current as of publication date.

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion