2114 LC Search Results

ir receiver module sj 1838

Abstract: kbu 810 g rba9 Nippon capacitors 665a
Contextual Info: H8S/2114 Group 16 Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2114 Rev.1.00 2003.10.31 R4F2114 Rev. 1.00, 10/03, page ii of xlii Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products

SCM21C14

Abstract: 2114 ram 2114AL-4 ram 2114 2114 static ram 2114 2114 static ram memory memory 2114 STATIC RAM 2114 SCM2114ALM
Contextual Info: SCM2114AL SOLID ^ STATE <§P SCIENTIFIC 1024 x 4 Static CMOS RAM Preliminary Pin Configuration Features i Fast Access Time Selection: 100ns/120ns/150ns/200ns i Direct Replacement for NMOS 2114 RAMs I 883 Qualified Version: 883/2114ALM i Three-State Outputs

Am91L24

Abstract: 2114 static ram memory 2114L 91l24 memory ic 2114 pin out ram 2114L 2114L RAM 91L14 2114 1k x 16 RAM 4096N
Contextual Info: IMPROVED PERFORMANCE WITH THE Am9124 By Alex Shevekov, Paul Liu and Joe Kroeger INTRODUCTION off the top of the chart with a value of about .28mW/bit. Note that the Am91L02C, 2114, 2114L, Am9114C, and Am91L14C are straight lines; their dissipation does not depend on the state of

2114 LC

Contextual Info: KSR1114 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i = A.1KQ., R2=47K£i) • C om plem ent to K S R 2114 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

LC3514A-15

Abstract: LC3514AL-15 LC3514AL-20 RAM 2114 2114 Ram pinout 18 LC3514A LC3514AL15K LC3514AL-20K ci 2114 LC3514A15K
Contextual Info: F N o. 2881 i L C 3514A - i 5K,2qk/L C 3514A L - i 5K,20K CMOS LSI 1024 Words X 4 Bits High-Speed CMOS Static RAM G e n e ra l D e sc rip tio n The LC3514A/LC3514AL are fully asynchronous CMOS static RAMs organized as 1024 wordsX 4 bits. They are compatible with worldwide standard N-channel 2114-type 4K SRAMs and have a full CMOS

VH19

Abstract: lcd t-con rsds ic 2114 VH26 VH28 VH27 AN1235 FPD33680 x1472 Y480
Contextual Info: May 2003 FPD33680 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 480 Outputs for SXGA/UXGA Applications General Description Features The FPD33680 is a direct drive, 64 gray level, 480 output, TFT-LCD column driver with an RSDS data interface. It

Contextual Info: FPD33680 FPD33680 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 480 Outputs for SXGA/UXGA Applications Literature Number: SNOSA70 May 2003 FPD33680 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 480 Outputs for

x 2933

Abstract: VH46 RX2 1027 1294 UPD176 VL61 VL47 FPD33584 VH29 vh50
Contextual Info: FPD33584 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications General Description Features The FPD33584 Column Driver is a direct drive, 64 gray level, 384 output, TFT-LCD column driver with an RSDS data

VH46

Abstract: VH29 vh41 vh31 mil vh15 VL47
Contextual Info: FPD33584 October 21, 2011 Low Power, Low EMI, TFT-LCD Column Driver with RSDS Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications General Description Features The FPD33584 Column Driver is a direct drive, 64 gray level, 384 output, TFT-LCD column driver with an RSDS data interface. It provides the capability to display 262,144 colors

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

2114 1k x 4 SRAM

Abstract: 2114 static ram 2114 ram 2114 SRAM sram 2114 OSC CMOS 32.768K ST2108 2063 static ram btm 330 LA 4440
Contextual Info: ST Sitronix PRELIMINARY ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: This is not a final specification. Some parameters are subject to change. 1. FEATURES n n n n n n n n n n Totally static 65C02S CPU ROM: 1M x 8-bit RAM: 4K x 8-bit Stack: Up to 128-level deep

2114 static ram

Abstract: sram 2114 2114 ram RAM 2114 psg010 2114 1k x 4 SRAM 2114 SRAM 4 bit dac OSC CMOS 32.768K 2063 static ram
Contextual Info: ST ST2108 8 BIT Microcontroller with 1M bytes ROM Notice: Sitronix Technology Corp. reserves the right to change the contents in this document without prior notice. This is not a final specification. Some parameters are subject to change. 1. FEATURES Totally static RISC CPU

2114 static ram

Abstract: 2114 Ram pinout 18 2114 static ram ic 2114 4k x 4 2114 LC RAM 2114 LC 2114 ram 2114 RAM ic 2114 "static RAM" ic 2114
Contextual Info: SANYO SEMICONDUCTOR CORP 7b 7997076 d Ë J 7 ^ 7 07b OGOlTEM SANYO SEM ICO NDUCTOR CORP LC 351 4 f3514L 76C 0 1 9 2 4 c-m os l s i 1024 WORDS X A BITS HIGH-SPEED CMOS STATIC RAM 3 f~ 07 CIRCUIT D R A W IN G NO.40D2 3007A General Description The LC3514/LC3514L are nonclocked CMOS static RAM's organized as 1024 words x 4 bits They are

SAE 1378

Abstract: Curtis Curtis Instruments 10 bar led display 10 bar led 2314Z 411004 sae j 1378
Contextual Info: VOLTMETER F E AT U R E S • Easy to read tri-color LED for “status at a glance” or models with LCD for superior visibility in bright daylight conditions. • Eye catching, flashing segments indicate operation beyond established parameters, such as low discharge

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

NJL5803K

Contextual Info: NJL5803K E jR < d 7 tj - |£ H £ B D W M K NJ L 58 03 K l ì , t 7 ^ * - K & tffi-t M íIE S S ^ I 5:- - y 7 ''itL fc g ;7 lc îS:3L& f f l è ^ - t i: / c 'J ' x > ; ÿ’ ;b tli *7 *1'U 7 U Í'Í' T -t. • # it • K M i t V X b t t b t lü < '''¡U '< M z i:& ;—

Contextual Info: MM2114/MM2114L Family 4096-Bit 1024x4 Static RAMs Maximum Access/Current MM211415L MM21142L MM211425L MM21143L MM2114L MM211415 MM2114* 2 MM211425 150 2 00 250 300 4 50 150 200 250 300 450 70 70 70 70 70 100 100 100 100 100 A c c e s s (T A V Q V - n s )

NX2114

Abstract: diode d1n5819 d1n5819 220uF 16V Electrolytic Capacitor smd nx2114a 2114A 6TPD220M ELECTROLYTIC CAPACITORS 220uF 25V 16TQC47M 1N5819
Contextual Info: Evaluation board available. NX2114/2114A 300kHz & 600kHz SYNCHRONOUS PWM CONTROLLER PRELIMINARY DATA SHEET Pb Free Product FEATURES DESCRIPTION The NX2114 controller IC is a synchronous Buck controller IC designed for step down DC to DC converter applications. Synchronous control operation replaces

NX2114

Contextual Info: Evaluation board available. NX2114/2114A 300kHz & 600kHz SYNCHRONOUS PWM CONTROLLER PRELIMINARY DATA SHEET Pb Free Product FEATURES DESCRIPTION The NX2114 controller IC is a synchronous Buck controller IC designed for step down DC to DC converter applications. Synchronous control operation replaces

sea3110

Abstract: 2114R 3214R sea3111 sea3210 senior 3010
Contextual Info: 8 SENIOR INDUSTRIES INC ^ md D • amasoa oaooon a ■ ACTUAL DIGIT : SIZE 0.3" £. 0.3" B 0.3" B. 0.3" Q • 0.3" B. 0.3" .B 0.3" ’ B. 0.3" +1 • 0.36" □ o 18 s in d - LED DISPLAYS • - DEVICE NO. COLOR SEC 2010 SEC 2011 SEC 2012 SEC 2013 SEC 2014 SEC2014R

Contextual Info: V T C INC 9388929 D 1 TBûfiTE'i G00133D 1 V T C I NC 99D 0 1 3 3 0 D T - 7 9 -0 6 -2 .0 VA4701 QUAD LOW-NOISE PRECISION OPERATIONAL AMPLIFIER PRELIMINARY INFORMATION CONNECTION DIAGRAMS SOIC Package LSP FAMILY DATA SHEETS FEATURES • Low Noise: 3.0 nV/VHz at 1KHz

gsm module 900

Abstract: delta v dcs B100 DLT3201 GSM900 NL-5928
Contextual Info: Preliminary DLT3201 3.5V Triple-Band Power Amplifier Module for GSM900 and DCS1800/PCS1900 Applications FEATURES - Supports dual/triple-band GSM handsets - Small footprint 9mm 10mm and low Profile (1.5mm max.) - InGaP HBT technology - High efficiency: 50% (min.) for GSM900;

86-512-6340-3008/FAX

Contextual Info: www.delta.com.tw/industrialautomation IABU Headquarters Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Asia Delta Electronics Jiang Su Ltd. Wujiang Plant3

AM9114EPC

Abstract: AM9114BPC AM91L14CDC AM9124 am9114cpc AM9114 AM9114BDM Am91L14BDM AM91L14BPC AM9114CDM
Contextual Info: Am9114 1024 x 4 Static R/W Random Access Memory DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • The Am9114 is a 4096-bit high perform ance, static, N-channel, read/write, random access memory organized 1024 words by 4 bits. Operation is from a single +5V power