210MJ Search Results

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

IF9120

Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Contextual Info: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model

IF9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

STA508A

Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
Contextual Info: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567

NTE2981

Contextual Info: NTE2981 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)

IF9120

Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

IRFT001

Abstract: 3001 transistor Q1/HXTR-3001
Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

dual Solenoid Driver

Abstract: ZXMS6006DT8TA 6006D
Contextual Info: A Product Line of Diodes Incorporated ZXMS6006DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •

MSK3001

Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET IRFT001 3001 transistor
Contextual Info: M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

4411E

Abstract: IF9120
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

SPF0001

Abstract: sta464c MN638S sta509a sanken S-60W STA464 SLA5027
Contextual Info: Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD Surface-mount (Surface-mount) STA SMA SLA Remarks 2SA1488A

IRFT001

Abstract: ic power mosfet 100V 57A MSK3001
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. THREE PHASE BRIDGE MOSFET POWER MODULE 3001 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Pin Compatible with IRFT001 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity

Contextual Info: ZXMS6005DT8 Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • • • Continuos Drain Source Voltage On-State Resistance Nominal Load Current VIN = 5V 60V 200mΩ 1.8A •

Contextual Info: ZXMS6005DT8Q Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact Dual Package • • On-State Resistance Nominal Load Current VIN = 5V

Contextual Info: A Product Line of Diodes Incorporated ZXMS6006DT8 ADV AN CE I N FORM AT I ON 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

IRFR9120

Abstract: p-channel pspice model IF9120 TA17501 123E5
Contextual Info: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

nte2981

Contextual Info: NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID

Contextual Info: NTE2981 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V)

Contextual Info: A Product Line of Diodes Incorporated Green ZXMS6005DT8 ADVANCE INFORMATION 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • Continuos drain source voltage 60V  Compact Dual Package 