210 RADIOTRON Search Results

pin diagram of RS 232/422

Abstract: pinout keyboard pcb PIN DIAGRAM OF ZIGBEE MC13192 MC9S08GT16CFD MC1319 TPRF1
Contextual Info: Revision 1.0.0 WI.FS24-100ST WI.FREESTAR DATASHEET WI.FS24-100ST-R DATASHEET RADIOTRONIX, INC. WI.FS24-100ST/ WI.FREESTAR DATASHEET Radiotronix 905 Messenger Lane Moore, Oklahoma 73160 Phone 405.794.7730 • Fax 405.794.7477 www.radiotronix.com 1 WI.FS24-100ST-R DATASHEET

RCA tube 83

Abstract: RADIOTRON T-20 radiotron triode rca company transmitting triode 210 radiotron
Contextual Info: TRANSM ITTING TRIODE GENERAL DATA Electr ical: Filament, Thoriated Tungsten: Voltage. 10 Current. 4.5 Am plification Factor . . 36 Direct Interelectrode Capacitances: Grid to Plate. . . . 4.8 Grid to Filament . . .

tube 805

Abstract: power amplifier 1000 watts rms 210 radiotron RCA tube crest audio pro 8200 RADIOTRON RCA 2A3 rca company Rca 805
Contextual Info: 805 R-F POWER AMPLIFIER, OSCILLATOR, CLASS B MODULATOR_ F ila m e n t V o lt a g e C u rre n t T h o ria te d T un gste n 10 3,25 D ir e c t In t e r e le c t r o d e C a p a c ita n c e s G r id t o P la t e 6 .5 G r id t o F ila m e n t 8.5 P la t e t o F ila m e n t

6j7 g

Abstract: 4600 resistor 210 radiotron RADIOTRON ST-14 AF 239 radiotron triode 6F6G radiotron 112 resistor 300 ohns
Contextual Info: Svptrteding Rodietr* 42. 45 Oofo mu«d Oct~ 194Ô \. RADIOTRDN ^ * '\ 42 P O W E R AM PLIFIER P E N T O D E Heater Coated Unipotential Cathode Voltage 6.3 a-c or d-c volts 0.7 Current amp. Maxijnum Overall Length 4-11/16" Maximum Seated Height 4-1/16» Maximum Diameter

Class d 1000 WATT

Abstract: radiotron triode 2A3 power Triode RADIOTRON rca company RCA tube
Contextual Info: 800 TRANSMITTING TRIODE F ila m e nt T h o ria te d T ungsten 3 - c or d -c v o l t s V o lta g e 7 .5 amp. Curren t 3.1 Ampi i f ic a t ion Fa cto r 15 D ir e c t In t e r e le c t r o d e C a p a c ita n c e s: G rid t o P la t e 2 .5 G r id t o Filam e nt

Sharp amplifier SM30

Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power

n mosfet depletion pspice model parameters

Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
Contextual Info: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant

Spice 2 computer models for hexfets

Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power

Spice 2 computer models for hexfets

Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction

pspice high frequency mosfet

Abstract: Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30
Contextual Info: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract Title N92 bt A w pice bcirt r e wer OST atur- accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and

U-97

Abstract: RCA-838 rca 838 transformer 220 volts 210 radiotron RADIOTRON
Contextual Info: m sä 838 C l a s s B M o d u l a t o r , R -F Power A m p l i f i e r RC A- 838 i s a h i g h - m u , t h r e e - e l e c t r o d e t r a n s m i t t i n g tube f o r use a s a z e fo­ b i a s c l a s s B a u d i o - f r e q u e n c y power a m p l i f i e r .

Contextual Info: TRM-915-R250 RF Transceiver Module Data Guide ! Warning: Linx radio frequency "RF" products may be used to control machinery or devices remotely, including machinery or devices that can cause death, bodily injuries, and/or property damage if improperly or inadvertently triggered, particularly in industrial

rca transistor manual

Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Contextual Info: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­