20V 3A ULTRA FAST RECOVERY DIODE Search Results

2am smd transistor

Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
Contextual Info: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels

block diagram of schottky diode

Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
Contextual Info: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

Contextual Info: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

LS4448W

Contextual Info: LITE-ON SEMICONDUCTOR LS4448W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

1RF7105

Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Contextual Info: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !

LS4148W

Contextual Info: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE FEATURES 1206 For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current

diode l2 32 diode

Abstract: STGD6NC60HD
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

GD6NC60HD

Abstract: JESD97 STGD6NC60HD STGD6NC60HDT4
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

Contextual Info: AP4569GD Pb Free Plating Product Advanced Power Electronics Corp. MODE POWER MOSFET D2  Low Gate Charge  Fast Switching Speed N AND P-CHANNEL ENHANCEMENT N-CH BVDSS D2 D1 40V RDS ON D1 52m ID  PDIP-8 Package  RoHS Compliant P-CH BVDSS G2 S2 PDIP-8 4.8A

AP4569GD

Abstract: N- and P-Channel 30-V D-S MOSFET
Contextual Info: AP4569GD Pb Free Plating Product Advanced Power Electronics Corp. MODE POWER MOSFET D2 ▼ Low Gate Charge ▼ Fast Switching Speed N AND P-CHANNEL ENHANCEMENT N-CH BVDSS D2 D1 40V RDS ON D1 ▼ PDIP-8 Package 52mΩ ID ▼ RoHS Compliant P-CH BVDSS G2 S2

Mosfet

Abstract: SSF2301 2301 marking sot-23
Contextual Info: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

FDD5N50UTM

Abstract: FDD5N50U FDD5N50UTF
Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

igbt based welding machine

Abstract: IRFR12
Contextual Info: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

Contextual Info: AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D 20V RDS ON Capable of 2.5V Gate Drive Single Drive Requirement 50m ID G RoHS Compliant & Halogen-Free 4A S D Description Advanced Power MOSFETs from APEC provide the

M3331

Contextual Info: AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant & Halogen-Free 4A

Contextual Info: AP4523GD Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge N-CH BVDSS D2 D2 ▼ Fast Switching Speed 40V RDS ON D1 D1 ▼ PDIP-8 Package 40mΩ ID ▼ RoHS Compliant G2 S2 PDIP-8 P-CH BVDSS

Contextual Info: AP4523GD Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET  Low Gate Charge N-CH BVDSS D2 D2  Fast Switching Speed 40V RDS ON D1 D1 40m ID  PDIP-8 Package  RoHS Compliant G2 S2 PDIP-8 P-CH BVDSS G1

AP2851GO

Contextual Info: AP2851GO Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement S2 ▼ Low On-resistance D2 N-CH BVDSS G2 30V RDS ON S2 ▼ Fast Switching Performance S1 TSSOP-8 D1 S1 40mΩ ID G1

GB6NC60H

Abstract: JESD97 STGB6NC60H STGB6NC60HT4
Contextual Info: STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH IGBT General features Type VCES VCE sat max @25°C IC @100°C STGB6NC60H 600V <2.5V 7A • Low on voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

Contextual Info: AP2851GO Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS  Simple Drive Requirement S2  Low On-resistance D2 G2 30V RDS ON S2  Fast Switching Performance S1 TSSOP-8 D1 S1 40m ID G1 5A P-CH BVDSS

AP9452G

Contextual Info: AP9452G Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G 4A S Description D The Advanced Power MOSFETs from APEC provide the