20SEP12 Search Results

Contextual Info: RMKMS CNM www.vishay.com Vishay Sfernice SMD Molded, 50 Mil Pitch, Dual-In-Line Thin Film Resistor Networks FEATURES • Tight TCR tracking down to 5 ppm/°C • Monolithic reliability • Low noise < - 35 dB • SMD precision networks Actual Size • SO08, SO14, SO16 cases

IGBT 101

Contextual Info: VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES • NPT IGBT technology • 10 s short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE on with positive temperature coefficient

CDRH148RNP-332MC

Abstract: CDRH148RNP-222MC CDRH148RNP-221MC CDRH148RNP-152MC CDRH148RNP-100MC CDRH148RNP-470MC CDRH148RNP-220MC
Contextual Info: SMD Power Inductor CDRH148R Description • Ferrite drum core construction • Magnetically shielded • L W H:15.0 15.0 8.5 mm Max. • Product weight: 6.8g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × Dimension - [mm] Max.8.5(Typ.8.3)

Contextual Info: A ISS. DATE 3 15-01-07 3A E.C.N. C DESCRIPTION D E F 1/07/1198 SCALLOP SIZE INCREASED TO R3.75 20-09-12 09/12/1347 TOLERANCE CHANGE 1 CUSTOMER DRAWING CTP-COIL 111 BUCKINGHAM AVE, SLOUGH SL1 4PF, ENGLAND TEL: +44 1753 575011 FAX: +44 1753 811359 e-mail: design@ctpcoil.co.uk}

A 3150 igbt driver

Abstract: VS-GT140DA60U 60APH06
Contextual Info: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse

Contextual Info: 952-S Low-Solids No-Clean Flux Product Description Kester 952-S is a halide-free, non-rosin organic flux designed for wave soldering of conventional and surface mount circuit board assemblies. The extremely low solids content 2.0% and nature of the activator system results in practically no

Contextual Info: ND151 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description The ND151 Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature

Contextual Info: B B 1. 2. 3. 4. 5. 6. 7. 8. Unless oth e rw ise noted, all d im e n sio n s are in inches. Foil M aterial: .0 0 2 th ic k 1 145 a lu m in u m In te rfa ce M aterial: .0 0 0 5 th ic k ph a se —ch a n g e th e rm a l c o m p o u n d , both sides. M axim um sh ip p in g & s to ra g e te m p e ra tu re — 4 0 ’ C