20QA Search Results

Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)20QA M D F(R )200A is a diode with flat mounting base which is designed for use in various rectifier applications. • If(av) = 200A, VrrM= 500V • Easy Construction with Anode (F) Type and Cathode (R) Type. • High reliability by glass passivation

Contextual Info: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200

IRGKI200F06

Abstract: IGBT FF 300 l200a
Contextual Info: International lü Rectifier PD-9.968C IRGKI200F06 Fast Speed IGBT "CH O PPER “ IGBT INT-A-PAK V CE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant •Switching-Loss Rating includes all “tail"

transistor C946

Abstract: C948 c948 transistor C946 C947 c 948 BR c945 transistor diode c946 transistor c951 c947 transistor
Contextual Info: International tor]Rectifier P D - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Ie Short circuit rated -1 Ops @ 125°C, V q E = 15V Switching-loss rating includes all "tail" losses

GE rcrt

Abstract: ov8d AY 5 3500
Contextual Info: L A 7 b 7 U : features & runcuuus [V IF ] * PLL type video d etecto r fo r the high p ictu re & sound q u a lity * High gain V IF amp Pre-amp unnecessary * High speed ACC * B u ilt in APC tim e constant SW [S IF ] * Audio IN/OUT a t same time * Yideo/Audio sim u ltan eojs muting, or audio-only muting possible

thyristor CR6AM

Abstract: CR6AM
Contextual Info: MITSUBISHI THYRISTOR CR6AM MEDIUM POW ER, G EN ERAL USE LEAD-MOUNTED, GLASS- PASSIVATION T Y P E D E S C R IP T IO N O U T L IN E D R A W IN G D im e n sio n : m m Mitsubishi type C R 6 A M -1 ~ 1 2 are glass-passivated junction type thyristors for use in low. power and high voltage control.

Contextual Info: PD-2.471 bitemational ^Rectifier HFA80NC40CSM Ultrafast, Soft Recovery Diode HEXFRED BASE COMMON CATHODE Features V r = 400V cJ • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I , -H 1 V F = 1 .3 V Qrr * = 5 0 0 n C

200a 300v mosfet

Contextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

ULTRA fast rectifier diode 15A 200V anode common

Abstract: common anode 600v ULTRA fast rectifier diode 30A 200V anode common 200A1 HFA35HA60C 200V 30A TRANSISTOR
Contextual Info: International PD-2.378 Provisional Data Sheet [^Rectifier HFA35HA60C HEXFRED u l t r a f a s t, s o f t RECOVERY DIODE Major Ratings and Characteristics Features: trr per leg 60 ns — — — — — — — — Qrr (per leg) 180 nC Benefits; 6 A 1.7

Contextual Info: NMT SERIES Triple O utput 3W DC-DC Converters w ith Shutdown features □ Triple Outputs -24V, -4 8 V & -72V TTL/CM OS Compatible O N /O FF Control Toroidal Magnetics Input/Output Isolation 1kVDC Power Sharing on Outputs n Internal SMD Construction n Industrial Temperature Range

IT71

Abstract: WE VQE 24 E G-115 G-116 IRGMVC50U IRGMVC50UU G122
Contextual Info: International S Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz

Contextual Info: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750

Contextual Info: PD-9.1145A kitemational kjr]Rectifier IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V c e s = 600V • Short circuit rated -10ps @125°C, VGE = 15V • Switching-loss rating includes ail "tail" losses

Contextual Info: INTERNATIONAL RECTIFIER ZOR 'T 73 DE'| 4Û55452 □□DLTll 1 Data Sheet No. PD-3.139 in t e r n a t io n a l r e c t if ie r S18CF & S18CFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 jus 125 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

Contextual Info: PD-2.338 International iliRectifier HEXFRED Provisional Data Sheet HFA25PB60 Major Ratings and Characteristics Units Characteristics 600 V 'F AV 25 A trr (typ) 23 ns Qrr (typ) 112 nC 10 A di(rec)M/dt (typ) 250 AJa$ VF 1.7 V Vr vrrm IRRM 600V, 25A ULTRA FAST, SOFT RECOVERY DIODE

Contextual Info: u im 28MHz, 12V/|is, Single Supply TECHNOLOGY LT1213/LT1214 Dual and Quad Precision Op Amps F€ R TU R € S D € S C R IP T IO n • Slew Rate 12V/nsTyp ■ Gain-Bandwidth Product 28MHzTyp ■ Fast Settling to 0.01% 2V Step to 200 xV 500ns Typ 10V Step to 1mV

ANSI 45 rectifier

Abstract: transistor f 3009 transistor BA RW transistor k30 hexfred hf*C HFA45HI60C international rectifier 2120 IR 2120
Contextual Info: International IOR Rectifier HEXFRED PD-2.380 Provisional Data Sheet HFA45HI60C ULTRA FAST, s o f t r e c o v e r y d iod e Features: Major Ratings and Characteristics Characteristics 600V, 45A — — — — — — — Ultrafast Recovery Ultra Soft Recovery

transistor c964

Abstract: E 5032 TI transistor D 5032 C970
Contextual Info: PD - 5.032 bitemational [kh*1Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated • 10ps @ 125°C, Vge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all ’tail” losses

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC 00 GP R 1G H T S R E S E RV E D. R EV 1S I O N S DIST P - S I G N A L S E C ON D A R Y LOCK PART NUMBER I 6 0 0 9 0 2 - I

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

200a 300v mosfet

Contextual Info: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated

SG800GXH24

Contextual Info: TO SHIBA SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR <;r;ann ;YH7A Unit in mm INVERTER APPLICATION • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage

30ct0045

Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
Contextual Info: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to