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20N6 Datasheets (9)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1

20N6 Price and Stock

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Vishay Semiconductors SE120N6G-M3-I RECTIFIER, STANDARD RECOVERY, SU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SE120N6G-M3-I	Tape & Reel	6,000		6,000	1 - 10 - 100 - 1000 - 10000 $0.36	Buy Now
	SE120N6G-M3-I	Digi-Reel	6,000		1	1 $1.58 10 $1.00 100 $0.66 1000 $0.47 10000 $0.43	Buy Now
	SE120N6G-M3-I	Cut Tape	6,000		1	1 $1.58 10 $1.00 100 $0.66 1000 $0.47 10000 $0.43	Buy Now
Micro Commercial Components MSJPFR20N60-BP N-CHANNEL MOSFET,TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPFR20N60-BP	Tube	2,000		1	1 $3.81 10 $2.48 100 $1.73 1000 $1.30 10000 $1.12	Buy Now
PanJit Group PJMH120N60EC_T0_00601 600V/ 120MOHM / 30A/ EASY TO DRI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJMH120N60EC_T0_00601	Tube	1,742		1	1 $3.00 10 $2.25 100 $2.02 1000 $1.69 10000 $1.56	Buy Now
FLIP ELECTRONICS FGB20N60SFD IGBT FIELD STOP 600V 40A TO-263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGB20N60SFD	Tape & Reel	1,600		800	1 - 10 - 100 - 1000 $1.81 10000 $1.81	Buy Now
Goford Semiconductor GC20N65M MOSFET N-CH 650V 20A 151W 180m(
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	GC20N65M	Tape & Reel	800		800	1 - 10 - 100 - 1000 $1.11 10000 $1.11	Buy Now
	GC20N65M	Digi-Reel	788		1	1 $4.13 10 $2.71 100 $1.90 1000 $1.90 10000 $1.90	Buy Now
	GC20N65M	Cut Tape	788		1	1 $4.13 10 $2.71 100 $1.90 1000 $1.90 10000 $1.90	Buy Now

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20N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263 20n60B	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 mosfet 20n60	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range	Original	20N6912/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range	Original	20N6914/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 20N60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20N60 20N60B O-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF

Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20N60C5 O-247 O-220 20080523d	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde	Original	20N6914/S35A	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B 20N60B O-268 O-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B	PDF
20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263	PDF

20N6 Search Results

20N6 Datasheets (9)

20N6 Price and Stock

Vishay Semiconductors SE120N6G-M3-I

Micro Commercial Components MSJPFR20N60-BP

PanJit Group PJMH120N60EC_T0_00601

FLIP ELECTRONICS FGB20N60SFD

Goford Semiconductor GC20N65M

20N6 Datasheets Context Search

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