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20N6 Datasheets (29)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N65A	AK Semiconductor	20N65A N-channel enhancement-mode MOSFET with 650V drain-source voltage, 20A continuous drain current, 0.35Ω typical on-resistance at 10V gate-source voltage, and TO-220F, TO-247, TO-247S package options.	Original	PDF
20N60A	AK Semiconductor	20A600V N-channel enhancement mode MOSFET with 20A continuous drain current, 600V drain-source voltage, 0.33Ω typical on-resistance at 10V gate voltage, available in TO-220F, TO-247 and TO-247S packages.	Original	PDF
JMPF20N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package.	Original	PDF
SLF20N60S	Maplesemi	20A, 600V N-channel MOSFET with RDS(on) of 0.19 ohm at VGS = 10V, low gate charge of 27nC, designed for high-efficiency switching applications, featuring high ruggedness, fast switching, and 100% avalanche testing.	Original	PDF
SK20N65A-TF	Shikues Semiconductor	650V N-Channel MOSFET, RDS(ON),typ.=0.38 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, TO-220, TO-220F	Original	PDF

CXG20N65PS	CREATEK Microelectronics	650V 20A IGBT in TO-220 package with 1.70V typical VCE(sat) at 20A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor.	Original	PDF
CWS20N60AC	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
SLF20N65S	Maplesemi	650V N-channel MOSFET with 20A continuous drain current, 0.35Ω typical RDS(on) at VGS = 10V, low gate charge of 40nC, and 35W power dissipation in TO-220F package.	Original	PDF
CXG20N65BSEK	CREATEK Microelectronics	650V 20A IGBT in TO-263 package with 1.70V typical VCE(sat) at 20A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor.	Original	PDF
SLP_F20N65U	Maplesemi	650V N-Channel MOSFET with 20A continuous drain current, 0.4 ohm typical RDS(on) at VGS = 10V, low gate charge of 50nC, and 100% avalanche tested for high reliability in power switching applications.	Original	PDF
JMPC20N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220C-3L package.	Original	PDF

20N6 Price and Stock

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STMicroelectronics STL20N6F7 MOSFET N-CH 60V 100A POWERFLAT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL20N6F7	Tape & Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.41	Buy Now
Avnet Americas	STL20N6F7	Tape & Reel	15,000	13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.34	Buy Now
Avnet Silica	STL20N6F7		57,000	14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL20N6F7			14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IKB20N60TATMA1 IGBT TRENCH FS 600V 40A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IKB20N60TATMA1	Digi-Reel	4,283		1	1 $2.89 10 $1.87 100 $1.29 1000 $1.07 10000 $1.07	Buy Now
	IKB20N60TATMA1	Cut Tape	4,283		1	1 $2.89 10 $1.87 100 $1.29 1000 $1.07 10000 $1.07	Buy Now
	IKB20N60TATMA1	Tape & Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.96 10000 $0.87	Buy Now
Avnet Americas ()	IKB20N60TATMA1	Bulk			1	1 $4.02 10 $2.60 100 $1.79 1000 $1.49 10000 $1.49	Get Quote
	IKB20N60TATMA1	Tape & Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.99 10000 $0.89	Buy Now
Newark	IKB20N60TATMA1	Bulk	200		1	1 $0.41 10 $0.41 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
Rochester Electronics	IKB20N60TATMA1		777		1	1 - 10 - 100 $1.18 1000 $0.98 10000 $0.87	Buy Now
Chip One Stop	IKB20N60TATMA1	Cut Tape	930	0 Weeks, 1 Days	1	1 $1.17 10 $1.17 100 $1.17 1000 $1.17 10000 $1.17	Buy Now

EBV Elektronik	IKB20N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MSJPFR20N60-BP N-CHANNEL MOSFET,TO-220AB(H)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPFR20N60-BP	Tube	2,000		1	1 $3.32 10 $2.16 100 $1.50 1000 $1.13 10000 $1.05	Buy Now
Mouser Electronics	MSJPFR20N60-BP		1,951			1 $3.33 10 $2.17 100 $1.66 1000 $1.27 10000 $1.26	Buy Now
Newark	MSJPFR20N60-BP	Bulk	1,000		1	1 $3.79 10 $2.63 100 $1.97 1000 $1.60 10000 $1.52	Buy Now
PanJit Group PJMF120N60EC_T0_00001 600V SUPER JUNCTION MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PJMF120N60EC_T0_00001	Tube	1,977		1	1 $3.62 10 $2.37 100 $1.65 1000 $1.25 10000 $1.25	Buy Now
Infineon Technologies AG IKW20N65ET7XKSA1 IGBT TRENCH FS 650V 40A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW20N65ET7XKSA1	Tube	1,289		1	1 $3.52 10 $3.52 100 $1.92 1000 $1.31 10000 $1.14	Buy Now
Avnet Americas	IKW20N65ET7XKSA1	Tube		26 Weeks	480	1 - 10 - 100 - 1000 $1.23 10000 $1.14	Buy Now
Newark	IKW20N65ET7XKSA1	Bulk	104		1	1 $0.69 10 $0.69 100 $0.69 1000 $0.69 10000 $0.69	Buy Now
Chip One Stop	IKW20N65ET7XKSA1	Tube	220	0 Weeks, 1 Days	1	1 $2.99 10 $1.63 100 $1.55 1000 $1.55 10000 $1.55	Buy Now
EBV Elektronik	IKW20N65ET7XKSA1			27 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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20N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263 20n60B	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 mosfet 20n60	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range	Original	20N6912/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range	Original	20N6914/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 20N60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20N60 20N60B O-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF

Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20N60C5 O-247 O-220 20080523d	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde	Original	20N6914/S35A	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B 20N60B O-268 O-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B	PDF
20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263	PDF

20N6 Search Results

20N6 Datasheets (29)

20N6 Price and Stock

STMicroelectronics STL20N6F7

Infineon Technologies AG IKB20N60TATMA1

Micro Commercial Components MSJPFR20N60-BP

PanJit Group PJMF120N60EC_T0_00001

Infineon Technologies AG IKW20N65ET7XKSA1

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