20N6 Search Results

20N6 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60A	AK Semiconductor	20A600V N-channel enhancement mode MOSFET with 20A continuous drain current, 600V drain-source voltage, 0.33Ω typical on-resistance at 10V gate voltage, available in TO-220F, TO-247 and TO-247S packages.	Original	PDF
20N65A	AK Semiconductor	20N65A N-channel enhancement-mode MOSFET with 650V drain-source voltage, 20A continuous drain current, 0.35Ω typical on-resistance at 10V gate-source voltage, and TO-220F, TO-247, TO-247S package options.	Original	PDF
JMPF20N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.42 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package.	Original	PDF
SLF20N60S	Maplesemi	20A, 600V N-channel MOSFET with RDS(on) of 0.19 ohm at VGS = 10V, low gate charge of 27nC, designed for high-efficiency switching applications, featuring high ruggedness, fast switching, and 100% avalanche testing.	Original	PDF
CXG20N65PS	CREATEK Microelectronics	650V 20A IGBT in TO-220 package with 1.70V typical VCE(sat) at 20A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor.	Original	PDF

SK20N65A-TF	Shikues Semiconductor	650V N-Channel MOSFET, RDS(ON),typ.=0.38 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, TO-220, TO-220F	Original	PDF
CWS20N60AC	Wuhan Xinyuan Semiconductor Co Ltd	600V N-Channel Super Junction MOSFET CWS20N60A with 190 mΩ RDS(on), 20A continuous drain current, fast switching capability, low gate charge, and avalanche rugged technology for high-efficiency power applications.	Original	PDF
SLP_F20N65U	Maplesemi	650V N-Channel MOSFET with 20A continuous drain current, 0.4 ohm typical RDS(on) at VGS = 10V, low gate charge of 50nC, and 100% avalanche tested for high reliability in power switching applications.	Original	PDF
CXG20N65BSEK	CREATEK Microelectronics	650V 20A IGBT in TO-263 package with 1.70V typical VCE(sat) at 20A, featuring field stop technology, 10μs short circuit capability, positive temperature coefficient, and integrated gate resistor.	Original	PDF
SLF20N65S	Maplesemi	650V N-channel MOSFET with 20A continuous drain current, 0.35Ω typical RDS(on) at VGS = 10V, low gate charge of 40nC, and 35W power dissipation in TO-220F package.	Original	PDF
JMPF20N65BJ	Jiangsu JieJie Microelectronics Co Ltd	650V, 20A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 0.47 ohm at VGS = 10V, featuring fast switching and improved dv/dt capability in a TO-220FP-3L package.	Original	PDF

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Infineon Technologies AG IKB20N60TATMA1 IGBT TRENCH FS 600V 40A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IKB20N60TATMA1	Cut Tape	4,298		1	1 $2.89 10 $1.87 100 $1.29 1000 $1.07 10000 $1.07	Buy Now
	IKB20N60TATMA1	Digi-Reel	4,298		1	1 $2.89 10 $1.87 100 $1.29 1000 $1.07 10000 $1.07	Buy Now
	IKB20N60TATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.96 10000 $0.87	Buy Now
Newark	IKB20N60TATMA1	Bulk	200		1	1 $0.41 10 $0.41 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
Chip One Stop	IKB20N60TATMA1	Cut Tape	930	0 Weeks, 1 Days	1	1 $1.16 10 $1.16 100 $1.15 1000 $1.15 10000 $1.14	Buy Now
Chip Stock	IKB20N60TATMA1		4,555			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IKB20N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Cal-Chip Electronics CHV2220N630154KXT HVCAP2220 X7R .15UF 10% 630V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CHV2220N630154KXT	Digi-Reel	1,000		1	1 $1.17 10 $0.76 100 $0.55 1000 $0.46 10000 $0.46	Buy Now
	CHV2220N630154KXT	Cut Tape	1,000		1	1 $1.17 10 $0.76 100 $0.55 1000 $0.46 10000 $0.46	Buy Now
	CHV2220N630154KXT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.44 10000 $0.38	Buy Now
Cal-Chip Electronics CHV2220N630102JCT HVCAP2220 COG 1000PF 5% 630V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CHV2220N630102JCT	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.30 10000 $2.19	Buy Now
Goford Semiconductor GC20N65M MOSFET N-CH 650V 20A 151W 180M(
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	GC20N65M	Cut Tape	788		1	1 $3.71 10 $2.43 100 $1.70 1000 $1.70 10000 $1.70	Buy Now
	GC20N65M	Digi-Reel	788		1	1 $3.71 10 $2.43 100 $1.70 1000 $1.70 10000 $1.70	Buy Now
onsemi FCA20N60 MOSFET N-CH 600V 20A TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCA20N60	Tube	441		1	1 $6.67 10 $6.67 100 $3.65 1000 $3.24 10000 $3.24	Buy Now
Richardson RFPD	FCA20N60				450	1 - 10 - 100 - 1000 $3.00 10000 $3.00	Buy Now
Chip Stock	FCA20N60		15,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FCA20N60		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	FCA20N60		11,700			1 - 10 $6.43 100 $4.29 1000 $4.29 10000 $4.29	Buy Now

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20N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B O-24s 20N60B s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263 20n60B	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 mosfet 20n60	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range	Original	20N6912/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range	Original	20N6914/S35A	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20N6903/S35A	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20N6903/S35A	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20N60 20N60 QW-R502-587 20N60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20N60 20N60B O-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF

Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20N60C5M O-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20N60C5 O-247 O-220 20080523d	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde	Original	20N6914/S35A	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B 20N60B O-268 O-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20N60C ISOPLUS220TM E72873 20080523a 20N60C	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20N60B	PDF
20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20N60 20N60B O-220 20N60B IXDP20N06B	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20N60B O-220AB O-263	PDF

20N6 Search Results

20N6 Datasheets (29)

20N6 Price and Stock

Infineon Technologies AG IKB20N60TATMA1

Cal-Chip Electronics CHV2220N630154KXT

Cal-Chip Electronics CHV2220N630102JCT

Goford Semiconductor GC20N65M

onsemi FCA20N60

20N6 Datasheets Context Search

20N60B

20n60B

20N60 datasheet

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