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    20N6 Search Results

    20N6 Datasheets (9)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    20N60A4
    Fairchild Semiconductor 600V, SMPS Series N-Channel IGBTsnull Original PDF 236.67KB 8
    20N60B
    IXYS Hiperfast(tm) Igbt Original PDF 114.27KB 4
    20N60B3
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    20N60B3
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    20N60B3D
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    20N60BD1
    IXYS Hiperfast(tm) Igbt Original PDF 54.09KB 2
    20N60C3DR
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    20N60C3R
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    20N60C3R
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    SF Impression Pixel

    20N6 Price and Stock

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    Micro Commercial Components MSJL20N60A-TP

    N-CHANNEL MOSFET,DFN8080A
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    DigiKey () MSJL20N60A-TP Digi-Reel 5,695 1
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    MSJL20N60A-TP Tape & Reel 3,000 3,000
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    Infineon Technologies AG AIKB20N60CTATMA1

    IGBT TRENCH FS 600V 40A TO263-3
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    DigiKey () AIKB20N60CTATMA1 Cut Tape 3,973 1
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    AIKB20N60CTATMA1 Digi-Reel 3,973 1
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    AIKB20N60CTATMA1 Tape & Reel 2,000 1,000
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    Avnet Americas AIKB20N60CTATMA1 Tape & Reel 10 Weeks 1,000
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    Newark AIKB20N60CTATMA1 Cut Tape 1,866 1
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    EBV Elektronik AIKB20N60CTATMA1 11 Weeks 1,000
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    Micro Commercial Components MSJPFFR20N60-BP

    N-CHANNEL MOSFET,TO-220F
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    DigiKey MSJPFFR20N60-BP Tube 1,984 1
    • 1 $3.32
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    Mouser Electronics MSJPFFR20N60-BP 1,920
    • 1 $3.33
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    Newark MSJPFFR20N60-BP Bulk 996 1
    • 1 $3.77
    • 10 $2.61
    • 100 $2.08
    • 1000 $1.66
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    Cal-Chip Electronics CHV2220N630102JCT

    HVCAP2220 COG 1000PF 5% 630V
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    DigiKey () CHV2220N630102JCT Tape & Reel 1,000 1,000
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    CHV2220N630102JCT Cut Tape 1,000 1
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    CHV2220N630102JCT Digi-Reel 1,000 1
    • 1 $4.63
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    Cal-Chip Electronics CHV2220N630472JCT

    HVCAP2220 COG 4700PF 5% 630V
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    DigiKey () CHV2220N630472JCT Tape & Reel 1,000 1,000
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    CHV2220N630472JCT Cut Tape 1,000 1
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    CHV2220N630472JCT Digi-Reel 1,000 1
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    20N6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20N60B

    Abstract: s9011
    Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original
    20N60B O-24s 20N60B s9011 PDF

    20n60B

    Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original
    20N60B O-220AB O-263 20n60B PDF

    20N60 datasheet

    Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60
    Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original
    20N60 20N60B O-220 20N60B IXDP20N06B 20N60 datasheet 20n60 G 20N60 to220 IGBT 20N60 PDF

    mosfet 20n60

    Abstract: 20n60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    20N60 20N60 QW-R502-587 mosfet 20n60 PDF

    Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range


    Original
    20N6912/S35A PDF

    Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.


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    20N6903/S35A PDF

    Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.


    Original
    20N6903/S35A PDF

    Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range


    Original
    20N6903/S35A PDF

    Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range


    Original
    20N6914/S35A PDF

    Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range


    Original
    20N6903/S35A PDF

    Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.


    Original
    20N6903/S35A PDF

    20N60

    Abstract: 20N60 mosfet
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is


    Original
    20N60 20N60 QW-R502-587 20N60 mosfet PDF

    Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,


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    20N60 20N60B O-220 PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


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    20N60C5M O-220 PDF

    Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original
    20N60C5M O-220 PDF

    20n60c

    Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600


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    ISOPLUS220TM 20N60C 220LVTM O-220LV 728B1 065B1 123B1 20n60c PDF

    Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET


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    20N60C5 O-247 O-220 20080523d PDF

    Contextual Info: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde


    Original
    20N6914/S35A PDF

    20N60 to220

    Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1
    Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


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    20N60 20N60B O-220 20N60B IXDP20N06B 20N60 to220 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 PDF

    20n60b

    Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original
    20N60B 20N60B O-268 O-247 PDF

    20N60C

    Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


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    20N60C ISOPLUS220TM E72873 20080523a 20N60C PDF

    Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient


    Original
    20N60B PDF

    20n60

    Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings


    Original
    20N60 20N60B O-220 20N60B IXDP20N06B PDF

    Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original
    20N60B O-220AB O-263 PDF