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20N6 Datasheets (10)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20N60A4	Fairchild Semiconductor	600V, SMPS Series N-Channel IGBTsnull	Original	PDF	236.67KB	8
20N60B	IXYS	Hiperfast(tm) Igbt	Original	PDF	114.27KB	4
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60B3D	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60BD1	IXYS	Hiperfast(tm) Igbt	Original	PDF	54.09KB	2
20N60C3DR	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
20N60C3R	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	37.63KB	1
MDD20N65F	Microdiode Semiconductor (MDD)	Power Field-Effect Transistor	Original	PDF

20N6 Price and Stock

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Infineon Technologies AG SPA20N60C3XKSA1 - Rail/Tube (Alt: SPA20N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPA20N60C3XKSA1	Tube	26,116	17 Weeks	1	1 $1.20 10 $1.20 100 $1.20 1000 $1.20 10000 $1.20	Buy Now
RS	SPA20N60C3XKSA1	Bulk	3	3 Weeks	1	1 $1.07 10 $1.07 100 $1.07 1000 $1.07 10000 $1.07	Buy Now
EBV Elektronik	SPA20N60C3XKSA1		1,500	18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCB20N60TM - Tape and Reel (Alt: FCB20N60TM)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCB20N60TM	Tape & Reel	5,600	64 Weeks	800	1 - 10 - 100 - 1000 $2.71 10000 $2.67	Buy Now
Chip 1 Exchange	FCB20N60TM		624			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	FCB20N60TM			64 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FCB20N60TM		14,400	53 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCP20N60 - Rail/Tube (Alt: FCP20N60)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FCP20N60	Tube	400	31 Weeks	50	1 - 10 - 100 $2.69 1000 $2.62 10000 $2.62	Buy Now
Avnet Silica	FCP20N60		900	53 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCP20N60		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FCP20N60					1 - 10 - 100 $3.13 1000 $3.04 10000 $3.01	Buy Now
Infineon Technologies AG IGP20N60H3XKSA1 IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-220, 3 Pins - Rail/Tube (Alt: IGP20N60H3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IGP20N60H3XKSA1	Tube	20		1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGTG20N60B3 600V, PT IGBT - Rail/Tube (Alt: HGTG20N60B3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HGTG20N60B3	Tube			450	1 - 10 - 100 - 1000 $2.60 10000 $2.41	Get Quote
Rochester Electronics	HGTG20N60B3		11,700		1	1 - 10 - 100 $2.95 1000 $2.64 10000 $2.48	Buy Now
Avnet Silica	HGTG20N60B3			53 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	HGTG20N60B3		2,700			1 $1.86 10 $1.86 100 $1.86 1000 $1.86 10000 $1.86	Get Quote

Find more 20N6 price and stock on Findchips.com

20N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60B Abstract: s9011 Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20n60b o-24s s9011	PDF
20n60B Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20n60b o-220ab o-263	PDF
20N60 datasheet Abstract: 20N60 20n60 G 20N60 to220 20N60B IGBT 20N60 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b +420n60 datasheet 20n60 g 20n60 to220 igbt 20n60	PDF
mosfet 20n60 Abstract: 20n60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20n60 qw-r502-587 mosfet 20n60	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6912/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 400 mm reflector position Sde 100 . 400 mm adjusting range reflector operating range	Original	20n6912/s35a	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20n6903/s35a	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20n6903/s35a	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20n6903/s35a	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6914/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 200 mm reflector position Sde 40 . 200 mm adjusting range reflector operating range	Original	20n6914/s35a	PDF
Contextual Info: Ultrasonic sensors Ultrasonic retro-reflective sensors URDK 20N6903/S35A dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 0 . 1000 mm reflector position Sde 200 . 1000 mm adjusting range reflector operating range	Original	20n6903/s35a	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6903/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo sensing range sd 100 . 1000 mm scanning range far limit Sde 100 . 1000 mm hysteresis typ.	Original	20n6903/s35a	PDF
20N60 Abstract: 20N60 mosfet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 20N60 Preliminary Power MOSFET 20A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	20n60 qw-r502-587 20n60 mosfet	PDF
Contextual Info: High Voltage IGBT with optional Diode IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Speed, Low Saturation Voltage C G Preliminary Data G G C E E E IXDP 20N60B D1 Symbol Conditions VCES TJ = 25°C to 150°C TO-220 AB C G = Gate,	Original	20n60 20n60b o-220	PDF
Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions	Original	20n60c5m o-220	PDF

Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions	Original	20n60c5m o-220	PDF
20n60c Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600	Original	isoplus220tm 20n60c 220lvtm o-220lv +3728b1 065b1 123b1	PDF
Contextual Info: IXKH 20N60C5 IXKP 20N60C5 CoolMOS 1 Power MOSFET ID25 = 20 A VDSS = 600 V RDS on) max = 0.2 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D ﬂ D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET	Original	20n60c5 o-247 o-220 20080523d	PDF
Contextual Info: Ultrasonic sensors UNDK 20N6914/S35A Ultrasonic proximity sensors dimension drawing 20 15 LED M8 x 1 14 42 6,5 3,2 29,5 9,5 Teach- in 5,7 11,8 general data photo scanning range sd 10 . 200 mm scanning range far limit Sde 30 . 200 mm hysteresis typ. 4 % Sde	Original	20n6914/s35a	PDF
20N60 to220 Abstract: 20N60B 20n60 igbt 20n60 20n60 G 20n60 igbt 20N60 datasheet iXDP 20N60 BD1 Contextual Info: IXDP 20N60 B VCES = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b +620n60 to220 igbt 20n60 20n60 g 20n60 igbt 20n60 datasheet ixdp 20n60 bd1	PDF
20n60b Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20n60b o-268 o-247	PDF
20N60C Contextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873	Original	20n60c isoplus220tm e72873 20080523a	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient	Original	20n60b	PDF
20n60 Contextual Info: IXDP 20N60 B VCES = 600 V IXDP 20N60 BD1 IC25 = 32 A VCE sat typ = 2.2 V High Voltage IGBT with optional Diode High Speed, Low Saturation Voltage C C G G G C E E Conditions VCES TJ = 25°C to 150°C C (TAB) E IXDP 20N60B Symbol TO-220 AB IXDP 20N60B D1 Maximum Ratings	Original	20n60 20n60b o-220 ixdp20n06b	PDF
Contextual Info: HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE sat typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20	Original	20n60b o-220ab o-263	PDF

20N6 Search Results

20N6 Datasheets (10)

20N6 Price and Stock

Infineon Technologies AG SPA20N60C3XKSA1

onsemi FCB20N60TM

onsemi FCP20N60

Infineon Technologies AG IGP20N60H3XKSA1

onsemi HGTG20N60B3

20N6 Datasheets Context Search

20N60B

20n60B

20N60 datasheet

mosfet 20n60

20N60

20n60c

20N60 to220

20n60b

20N60C

20n60