20MAY05 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC D IS T AD 00 ALL RIGHTS RESERVED. R E VIS IO N S LTR B DESCRIPTION DATE REVISED PER ECN 0 5 1 2 - 0 3 0 5 - 0 5 DWN APVD JDP GES I2M A Y 06 D

Contextual Info: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 5 6 4 3 2 PU B LIC ATIO N RIG HTS R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. LOC D IS T AD 00 R E VIS IO N S LTR H D E S C R IP T IO N EC 0G3C 0 2 0 9 REVISED PER DATE DWN BSV JLG

Contextual Info: 20.0-38.0 GHz GaAs MMIC Balanced Mixer May 2005 - Rev 20-May-05 26BAM0545 Features Chip Device Layout tio n Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883

A30E300000

Abstract: ASTM D 2240
Contextual Info: REVISIONS ZONE REV DESCRIPTION A ECN 0553 B ECN 0601 DATE APPROVED 20-MAY-05 10-AUG-06 NO LOGO NORTECH LOGO PART NUMBER INFORMATION # 4 - 4 0 X 7 / 1 6 ” FILLISTER HEAD MACHINE SCREW MATERIAL - STEEL FINISH - BRIGHT ZINC HEXAVALENT CHROMIUM FREE QTY: 2 EACH

ASTM D2240

Contextual Info: REVISIONS ZONE REV DESCRIPTION A ECN 0553 B EC N 0601 DATE APPROVED 20-MAY-05 10-AUG-06 •0 .7 1 0 [1 8 .0 3 ] NO LOGO NORTECH LOGO PART NUMBER INFORMATION - 4 0 X 7 / 1 6 ” FILLISTER HEAD MACHINE SCREW MATERIAL - STEEL FINISH - BRIGHT ZINC HEXAVALENT CHROMIUM FREE

ablestick

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

nitrogen coupling

Abstract: 30DBL0537 84-1LMI
Contextual Info: 14.5-17.0/29.0-34.0 GHz GaAs MMIC Active Doubler 30DBL0537 May 2005 - Rev 20-May-05 Features Chip Device Layout tio n Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Power 35.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 28.0-31.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30MPA0562 Features Chip Device Layout tio n Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0557 May 2005 - Rev 20-May-05 Features Chip Device Layout io n Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: XT49S Vishay Dale Low Profile Holder Type Crystal Units FEATURES • Low cost • Industry standard RoHS • Wide frequency range COMPLIANT • Excellent aging • 100 % Lead Pb -free and RoHS compliant This part is a miniature AT cut strip crystal unit with a low

Contextual Info: XT32P Vishay Dale Surface Mount Watch Crystal FEATURES • Low profile RoHS • Industry standard footprint COMPLIANT • Long term stability The XT32P is a cylinder type watch crystal molded in a thermoplastic housing capable of withstanding soldering re-flow processing. The XT32P is perfect for your SMD

Contextual Info: XT49U Vishay Dale Resistance Welded Holder Type Crystal Unit FEATURES • Low cost • Industry standard RoHS • Excellent aging COMPLIANT • Wide frequency range • ‘AT’ cut crystal The XT49U series is an industry standard AT cut crystal housed in a HC-49U package. It is our standard resistance

u1004

Abstract: ghz transmitter datasheet 84-1LMI XP1005 XU1004
Contextual Info: 32.0-45.0 GHz GaAs MMIC Transmitter U1004 May 2005 - Rev 20-May-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain

Contextual Info: 27.0-33.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30SPA0536 Features Chip Device Layout tio n Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

30SPA0536

Abstract: 84-1LMI
Contextual Info: 27.0-33.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 20-May-05 30SPA0536 Features Chip Device Layout tio n Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015 May 2005 - Rev 20-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 597D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Ultra-Low ESR, Conformal Coated, Maximum CV FEATURES • New case size offerings. • Case profiles: E case 4 mm and R case (3.6 mm). • Low profile case: V case (2 mm). • Terminations: Tin (2) standard.

27TRX0357

Abstract: 84-1LMI usb transmitter schematic diagram
Contextual Info: 27.0-36.0 GHz GaAs MMIC Transmitter 27TRX0357 Chip Device Layout May 2005 - Rev 20-May-05 Features tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain

P1015

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015 May 2005 - Rev 20-May-05 Features Chip Device Layout Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 592D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES • New robust 6.3 V ratings for battery operated wireless applications. • New extended range offerings. • 1.0 mm to 2.5 mm height. •

034141

Abstract: 6-103414-2
Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AD 00 R E VIS IO N S DESCRIPTION LTR P EC 0G3C 0 2 1 8 P1 REVISED PER DATE DWN 29APR05 05 BSV JLG 8JAN10 E C Q - 0 9- 0 21826

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED A LL C O P Y R IG H T - B Y TYCO E LE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S LOC D IS T C O R P O R A TIO N . HOUSING MATERIAL: CONTACT R E V IS IO N S 00 AD RESERVED. RELEASED

Contextual Info: 35.0-45.0 GHz GaAs MMIC Power Amplifier 38MPA0547 May 2005 - Rev 20-May-05 Features Chip Device Layout tio n Excellent Transmit Output Stage Output Power Adjust 23.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing