20KQ Search Results

Contextual Info: TAAA12J3A MINIATURE ENCAPSULATED TELECOMMUNICATION HIGH IMPEDANCE TRANSFORMER A. Electrical Specifications @ 25° C o REV. S ta tu s 1. Primary Impedance; 20kQ REVISION 0 4 / 3 0 / 0 4 MR 2. Secondary Impedance; 20kQ REVISION A ADDED REFLOW PROFILE & RoHS|

ALLOY 52

Abstract: a84a PA84 PA84A PA84S 10CR
Contextual Info: - 10 2 — • APEX ft iz ft T a ­= 25*C rn Si # & PA84, PA 8 4 S, PA 8 4 A 300 Vcc Id ^ ( /\- f V tt t# * « Vcc(V )1 • < 1 U U x - v , S * ft 'h 1 a V lo Vi«/ * V +300 V fc Pd 7V= 85°C 17 .5 w SR dB 7.5 Ä/. —3 . 5 k i i fic = 20kQ i; = .

Contextual Info: 4mm Cermet Potentiometer m iniReel Ohm s O rd er f N um ber Type 1 1KD 2KQ 5KD lOKii 20KQ 50Ka lOOKn 200KQ 330K12 500KD Type 2 1KT2 2KQ 5K£2 10KQ 20KD 50K12 100KQ 200K£2 330K£2 500KT2 691-410 691-420 691-450 691-510 69 1-520 691-550 691-610 691-620 691-633

fetal

Contextual Info: Miniature Potentiometers XV082G Circuii XV082 Circuit ä ° ] O > - —© t = © s p zcm c& n o m xvoazspw H XV082RM N 120±5° 300± 5° •fetal t o t i o i t a t AngleB ir f a d iiia l T o n i l i 1~10m N m 1ß: 5 00 Q , 1 k n , 2kQ , 3kQ , 5kQ , 10kQ , 20kQ , 3 0 kQ , 5 0 kQ , 100kQ , 200kQ ,

Varo Semiconductor diode

Contextual Info: FU JI t ìU t ìE L ilt ìU K 2SK2523-01 N-channel MOS-FET FAP-II Series 450V > Features - 60W T O -2 2 0 A B 10 1.32 y «e JL2, o.a±o2 254 Symbol Drain-Source-Voltage V DS 450 V V DGR 450 V 9 36 A ±30 V P d 60 W T * 150 °C -55 ~ +150 °C gs= 20KQ Continous Drain Current

J325

Abstract: AE70
Contextual Info: Series 76 Series 76 Trim m er .75 Watt. W ir e w o u n d . Precision Electrical Specifications Resistance Range 100Q to 20KQ Resistance Tolerance ±5% Power Rating 0.75 watts @ 85°C derated to zero at 150°C Effective Rotation 11.25 turns Electrical Rotation

Contextual Info: Series 76 Tr i mm er .75 Watt. Wirewound. Precision Series 76 Eleclrical Specifications Resistance Range lOOO to 20KQ Resistance Tolerance ±5% Power Rating 0.75 watts @ 85°C derated to zero at 150°C Effective Rotation 11.25 turns Electrical Rotation 11.5 turns with declutching

500 watt mosfet power amplifier circuit diagram

Abstract: transistor v2w power supply IRF830 APPLICATION 300 watt mosfet amplifier
Contextual Info: y IN T E G R A T E D C I R C U IT S UC1852 UC2852 UC3852 UNITRQDE High Power Factor Preregulator FEATURES • Low-Cost Power Factor Correction • Power Factor Greater Than 0.99 • Few External Parts Required • Controlled On-Time Boost PWM • Zero-Current Switching

2SK1357

Abstract: 2Sk1357 transistor
Contextual Info: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )

74AC11520

Contextual Info: 54AC11520,74AC11520 8-BIT IDENTITY COMPARATORS D2957, JULY 1987 - REVISED APRIL 1993 54AC11520 . . . J PACKAGE 74AC11S20. . . DW OR N PACKAGE TOP VIEW Compares TVvo 8-Bit Words Flow-Through Architecture Optimizes PCB Layout Center-PIn Vcc and GND Configurations

marking pd

Contextual Info: T O SH IB A 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX

RL3792

Abstract: 500 watt mosfet power amplifier circuit diagram
Contextual Info: y UC1852 UC2852 UC3852 U N IT R O D E High Power-Factor Preregulator FEATURES DESCRIPTION • Low-Cost Power Factor Correction • Power Factor Greater Than 0.99 • Few External Parts Required The UC1852 provides a low-cost solution to active power-factor correction PFC

2SJ438

Contextual Info: TOSHIBA 2SJ438 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ438 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS (.2 ± 0 .2 2.710.2

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

ECHO canceller IC

Abstract: acoustic ECHO cancel ic SM7704 7603B1
Contextual Info: E2U0051-16-Y3 O K I Semiconductor MSM7603B Echo Canceller GENERAL DESCRIPTION The MSM7603B is an improved version of the MSM 7602 with basically the same configuration, and offers twice the cancelable echo delay time of the MSM7602. The MSM7603B is a low-power CMOS IC device for canceling echo in an acoustic system or

IC 741 OPAMP

Abstract: pin diagram of op-amp ic 741 741 as buffer amplifier of ic 741 op-amp OF IC 741 opamp pin diagram of 741 op-amp si6260 741 opamp TRANSISTOR FS 10 TM pin diagram of ic 6260
Contextual Info: 2 \ M k m s u s tm s INNOVATORS IN/INTEGRATION Data Sheet SSI 6260 Low Cost 6-Bit D-to-A Converter ooj $£> 006656 GENERAL DESCRIPTION FEATURES Silicon Systems’ new SSI 6260 is monolithic, 6 bit, digital-to-analog converter based on an R-2R ladder net­

PP02

Contextual Info: Super te x inc. HV513 8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect Features General Description □ HVCMOS, technology The HV513 is a low voltage serial to high voltage parallel converter w ith 8 high voltage push-pull outputs. This device has

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

OP07 "direct replacement"

Abstract: OP-07 application VOS TRIM op amp OP-07 differential AD-510 OP07A OP 741 AD510 OP-05 OP-07
Contextual Info: Hybrid Systems W W u c n p 07 CORPORATION | | Q ^ | / Operational Amplifier for Instrumentation DESCRIPTION The HS OP-07 is an ultra-low OFFSET op am p designed for convenient application in instrumentation and other low level signal conditioning circuitry. It is internally c o m ­

Contextual Info: date 02/2012 page 1 of 4 SERIES: DESCRIPTION: ACZ16 mechanical incremental encoder ELECTRICAL SPECIFICATIONS parameter conditions/description output waveform square wave output signals A, B phase current consumption 0.5 mA output phase difference T1, T2, T3, T4 ≥ 3.5 ms @ 60 rpm see output waveform

Contextual Info: T O SH IB A 2SJ511 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-M O SV 2SJ511 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RDS (ON)= 0.32Q (Typ.)

1r1j

Abstract: 1RF840 CAPACITOR 100 cFK IC U114 U114 UC3841
Contextual Info: UC1841 UC2841 UC3841 UNITRODE Programmable, Off-Line, PWM Controller FEATURES DESCRIPTION • The UC1841 family of PWM controllers has been designed to increase the level of versatility while retaining all of the performance features of the earlier UC1840 devices. W hile still optimized for highly-efficient boot­

Contextual Info: HITACHI/ LI N EA R D E V I C E S 2bE D • H H T b E Q E OOllQSfc. T ■ HA118059, HA118099 T -7 7 -D 7 -0 5 3-clrcult, 2-polnt Video Switch HA118099/HAU8099FP are 3-ciicuit, 2-point switches designed to prevent HA118059/HA118059FP switching noise. They are recommended for use in applications that

equivalent transistor of F2B transistor

Abstract: 2N6429 equivalent "FM receiver" 10J 6K ceramic MS25036-157 power inverter schematic diagram CA41 CA411 MD500 2n6429
Contextual Info: NEUBRIDGE MICROSYSTEMS ESE D • bSññlQl OOOOTOG O ■ CA408/CA411 C fíL FM RECEIVER CHIP SET FOR DATA T -7 5 -9 0 • Wide supply voltage range 1.8 - 6.0 volts • Single cell operation down to 0.9 volts using external Inverter and on-chlp regulator circuitry