20JIS Search Results
20JIS Datasheets Context Search
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Contextual Info: Si GEC P L E S S E Y j a n u a r y i 996 SEM IC OND UCT OR S DS4273-2.3 TF447.A FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 1200V I 470A T RMS 5000A ^TSM 200V/|XS dV/dt 500A/(iS dl/dt 20jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■ |
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ds4273-2tf44720jistf44712a | |
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Contextual Info: an A M P company Radar Pulsed Power Transistor, 135W, 20jis Pulse, 1% Duty 2.9 - 3.1 GHz PH2931 -135S • • • • • • • • V2.00 suo üfe Features NPN Silicon P ow er T ran sisto r C o m m o n Base C onfiguration B ro a d b an d Class C O p e ra tio n |
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20jisph2931-135stt50m50a+1 | |
2C05Contextual Info: PART NUMBER: FSRI81K18ES Is s u e date: Mar. 2 3 , 2 0 0 5 1. Electrical Rating: Varistor Vtltage M axim um AJIovxefole V d ta g 3 M in 170 V tlts M ax 207 V tlts A C rm s 120 V tlts DC 160 V tlts 320 V tlts M axim um C lam p in g V tltage at 8 0 A ,8/20jiS |
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fsr181k18escurrentfif20enercivf10/1000f181k18e+1 | |
SiCr thin film
Abstract: zener n20
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10-bitad57316-bit20jis+5 | |
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Contextual Info: wt GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4274-2.1 TF666.A FAST SWITCHING THYRISTOR KEY PARAMETERS 1400V DRM 700A ^T RMS 9000A ^TSM dV/dt 300V/JIS 500A/(IS dl/dt 20jis % APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■ Railway Traction. |
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ds4274-2tf66600v/jis20jis+5 | |
samsung NAND FSR
Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
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km29n16000-tsop2-400f-tsop2-400rsamsung nand fsr+4 | |
TNR32E471KContextual Info: METAL OXIDE VARISTORS E-SERIES TNR High Surge Current V anstor Voltage Model Number VlmA (V) I* • Operating temperature range: —40— H85”C • Storage temperature range: —40— l-110°C E-SERIES (High Surge Current) • Features . Excellent clamping voltage characteristic and fast response |
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tnr20e221k8/20/iseetnr20e102ktnr20e112k+6 | |
LC7818
Abstract: 1SWB EETL LC7616 DIP30S
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1636dlc781820/isec1swb+3 | |
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Contextual Info: 17313b5 0Q330SQ 7ST Precision, Low Power INSTRUMENTATION AMPLIFIERS FEATURES DESCRIPTION • LOW OFFSET VOLTAGE: 50jiV max The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. Their versatile 3-op amp design and small |
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17313b50q330sq50jivina128+4 | |
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Contextual Info: B U R R -B R O W N DAC7612 Dual, 12-Bit Serial Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • LOW POWER: 3.7mW • FAST SETTLING: 7jis to 1 LSB • 1mV LSB WITH 4.095V FULL-SCALE RANGE • COMPLETE WITH REFERENCE • 12-BIT LINEARITY AND MONOTONICITY |
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dac761212-bit | |
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Contextual Info: B U R R -B R O W N DAC7621 For most current data sheet and other product information, visit www.burr-brown.com 12-Bit, Parallel Input DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • LOW POWER: 2.5mW • FAST SETTLING: 7jis to 1 LSB • 1mV LSB WITH 4.095V FULL-SCALE |
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dac762112-bitzz33817313bs | |
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Contextual Info: Synchronous CPU Buck Controller Capable of Implementing Multiple Linear Regulators Description The CS51313 is a synchronous d u a l NFET Buck R egulator C ontroller. It is designed to pow er the core logic of the latest high perform ance CPUs. It uses the |
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cs51313ms-012cs51313gd16cs51313gdr16 | |
VARISTOR 275 L20
Abstract: VARISTOR 275 LA 20A VARISTOR 320 L20 320L40 275L20 250LA10 130LA 150LA20A 660L100 Metal-Oxide Varistor 1302
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e75961e56529lr91788m1981+14 | |
LA1210
Abstract: V26m
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la1210v26m | |
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D3C3Contextual Info: GENL INSTR/ POWER SbE D • General T -¿ 2 ^ Semiconductor - Industries, Inc. H DIODE ARRAY T rans Z orb T R A N S IE N T VO LTA G E SUPPRESSO R 16 PIN U N ID IR E C TIO N A L & BID IRECTIO NAL 5.0 T H R U 24 V O L T S DESCRIPTION CASE This family of arrays uses the |
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da05nda12nda15nda24n+7 | |
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Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to |
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ibm2520l8767102mb/s400mb/schapt07 | |
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Contextual Info: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts |
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2n7323d2n7323r2n7323hfrf9150+5 | |
ba250g
Abstract: VARISTOR VM 01 MZ
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880vm2800vmba250gvaristor vm 01 mz | |
V272A60
Abstract: VARISTOR 39Z3 H 04 56Z2 18Z2 22z1 08Z2 68Z10 varistor z051 Varistor Harris 08z1 VARISTOR 33Z1
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v18za3v18za40v18zc3v18za40x10+10 | |
A41S
Abstract: AAS-100
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avs1250/60hzavs12cb110/220v+3 | |
LT229
Abstract: LT1223 LT1227 LT1229 LT1229C LT1229M LT1230 LT1230C LT1230M SV1 3100
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100mhz25miilt1229/lt123scffipt10f1+12 | |
EUA SOT23-8
Abstract: SO-113 MAX4255EUK
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max4249-max4257max4249/max425jxeua sot23-8+2 | |
V68MLA1206T23
Abstract: V14MLA0805 V14MLA0805L V14MLA1206 V18MLA0805 V18MLA0805L .MODEL BD231
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mil-std-3015500nabd231v68mla1206t23+6 | |
E75961Contextual Info: C - lll S e r ie s H A R R IS J u ly 1 9 9 9 D a ta S h e e t F ile N u m b e r 3 5 4 0 .5 High Energy Radial Lead Varistors Features The C -lll Series of metal-oxlde varistors are specifically designed for high surge energy absorption ratings. This is achieved through a special dielectric material formulation |
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v175la20c8/20nse75961 | |