MARKING CODE smd R05
Contextual Info: A E 14 0Y 1 00034 Ver.1.01 SPECIFICATION SMD INDUCTORS COMPACT TYPE BRFL2518TYPE TAIYO YUDEN AE140 Y 100034V101 Specifications BRFL2518 TYPE (1/11) 1. Range of application This specification sheet applies to SMD inductor(compact type), BRFL2518. 2. Ordering code
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brfl2518typeae140100034v101brfl2518+316034ea4291aalmarking code smd r05
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100uf low esr capacitors
Abstract: 1.0 farad electrolytic capacitor 3300uF 1000 micro farad electrolytic capacitor DC-DC Converters v-chip
Contextual Info: Low ESR - High Current Rated Solid Polymer Electrolyte SMT Aluminum Electrolytic Capacitors The NEW NSPV series of solid polymer electrolyte SMT aluminum electrolytic capacitors from NIC Components featuring High Ripple Current Ratings up to 5.10Arms, 100KHz/
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10arms100khz/105degc015ohm+820degclmn02100uf low esr capacitors1.0 faradelectrolytic capacitor 3300uf1000 micro farad electrolytic capacitordc-dc convertersv-chip
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Contextual Info: JOG-01045 001 OKI Electronics Components Preliminary OD9243N Rev. 4 [1. 2004] 10Gbps PIN-Preamplifier surface mount receiver module 1. DESCRIPTION The OD9243N is the 10Gbps receiver module which incorporates a high speed pin-photodiode and a High Gain trans-impedance amplifier TIA . This receiver is specifically designed for OC-192
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SMM5845V1
Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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FET MARKING
Abstract: ELM5964-4PS ELM5964 Sumitomo elm5964 elm5964-4pst elm5964-4
Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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elm5964-4psfet markingelm5964sumitomo elm5964+2elm5964-4pstelm5964-4
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elm7179
Abstract: ELM7179-4PS sumit
Contextual Info: ELM7179-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.5dB (Typ.) High PAE: ηadd=35% (Typ.) Broad Band: 7.1~7.9GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7179-4PS is a power GaAs FET that is internally matched for
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Power Amplifier MMIC
Abstract: SMM5845V1B SMM5845V1 330-DB
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50W ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage
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smm5845v1bpower amplifier mmicsmm5845v1330-db |
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ELL-3GM1R3N
Abstract: ELL3GM100M ELL3GM120M ELL3GM150M ELL3GM180M ELL3GM220M ELL3GM270M ELL3GM330M
Contextual Info: Issue NO. * : fi a 2002^4^230 Date o f I ss ue ÍT E TlDC-02009 : % Classification: Apri i 23,2002 _ 'T/I r-ju i— i ^ - U New L-* Chan8e i LJ To Digi-Kev ÍA À ft I f PRODUCT SPECIFICATION FOR INFORMATION jk na ^ : Chip Choke Coil P roduct D e sc r ip tio n _
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tldc-02009100mm400mm151-ell3-006+92000pcsell-3gm1r3nell3gm100mell3gm120mell3gm150mell3gm180mell3gm220mell3gm270mell3gm330m
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Yuasa battery
Abstract: IEC285 Yuasa Yuasa uxf100-12
Contextual Info: Yuasa Battery Sales UK Ltd MODEL No: 1DH (GENERIC) Description: D SIZE HIGH TEMP NI-CAD Capacities Available : 4000, 4400 and 4500 mAh Specification Nominal Capacity Nominal Voltage Charge current 32.5±0.2 Charge time 59.0±0.5 Charge Ambient Temperature
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400H
Abstract: NJW1137 NJW1137L NJW1137M SDIP30 SDMP30
Contextual Info: NJW1137 P R E L I M I N A LY AUDIO PROCESSOR with SOUND ENHANCEMENT • GENERAL DESCRIPTION The NJW1137 is an audio processor with sound enhancement BBE . It includes all of functions processing audio signal for TV, such as tone control, balance, volume,
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porte logique
Abstract: TS8387 b511 Current Output Temperature 81102G0 B511 transistor porte logique and CQFP68 TS81102G0 TS8388B TSEV83102G0F
Contextual Info: MAIN FEATURES § Programmable DMUX ratio : 1:4 : Data rate max = 1 Gsps, PD 8b/10b < 3.8 / 4.1 W (ECL 50Ω output) 1:8 : Data Rate max = 2GSPS, PD (8b/10b)< 5.0 / 5.7 W (ECL 50Ω output) 1:16 with 1 TS8388B and 2 DMUX. § Parallel output mode. § 8/10 bit.
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8b/10bts8388bporte logiquets8387+7b511 current output temperature81102g0b511 transistorporte logique andcqfp68ts81102g0tsev83102g0f
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ROADM
Abstract: athermal awg Furukawa fiber ribbon GR-1209 PS701 043g DWDM AAWG 1602.31 04-3G
Contextual Info: Data Sheet PS701 September. 2010 Athermal AWG Module Applications z DWDM terminal multiplexer and demultiplexer z ROADM Reconfigurable Optical add/drop multiplexers z Metro and WDM PON Product Type : PS701 Descriptions z PS701 provides stable optical performance against temperature change without
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ps701100ghz-40chreliabi78fsds-043g+8roadmathermal awgfurukawa fiber ribbongr-1209043gdwdm aawg1602.3104-3g
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Contextual Info: 1 of 3 Creation Date :June 17 2014 NLCV32T-100K-EFD Applications Automotive Grade Feature Wire Wound No Directivity Ferrite Core AEC-Q200 Series NLCV-EFD Series / NLCV32-EFD Type Status PROD Size Length L 3.20mm +/-0.20mm Width(W) 2.50mm +/-0.20mm Thickness(T)
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atmel 1042
Abstract: 16a8 FR4 epoxy dielectric 17vee IEC C13 pinout Radiall R125 Radiall R125 620 Transistor 8c4 Radiall R112 665 TS81102G0
Contextual Info: MAIN FEATURES ! ! ! ! ! ! ! ! 50Ω input clock and data differential ECL through 2.54mm pitch connectors. Demultiplexed outputs (single-ended ECL) 50Ω adapted on up to 8 x 2.54mm pitch connectors. DMUX functions adjusted by jumpers and potentiometers.
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200mm190mmts81102g0tsev81102g0tpzr3+9atmel 104216a8fr4 epoxy dielectric17veeiec c13 pinoutradiall r125radiall r125 620transistor 8c4radiall r112 665
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Contextual Info: RLF7030-T TYPE Standard Products!! Component Image & Dimension Automotive Target SMD Power Inductor Features : a Miniature Size : Mount Area : 7.0mm square Profile : 3.2mm Max. Height LEAD Free!! b) Low D.C.Resistance . Low D.C.resistance and High rated current was realized
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SMD PI
Abstract: 05s05 smd transistor 6g DR1P5-05D05 DR1P5-05S05 DR1P5-05S12 DR1P5-05S15 DR1P5-12D05 DR1P5-12S05 DR1P5-12S12
Contextual Info: DR1P5 I s o l a t e d a n d R e gulated 1.5 WATT Modul ar DC/DC Converters series Low Ripple and Noise PI Input Filter Regulated Outputs 500V Isolation 5 Sided EMI Shielding Unit measures 0.8”W x 1.25”L x 0.4”H Model Number SINGLE OUTPUT DR1P5-05S05 SMD
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dr1p5-05s05dr1p5-12s05dr1p5-24s05dr1p5-05s12+10dr1p5-12s12dr1p5-24s12dr1p5-05s15dr1p5-12s15dr1p5-24s15dr1p5-05d05smd pi05s05smd transistor 6gdr1p5-12d05
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Yuasa battery
Abstract: IEC285 Yuasa npw45-12
Contextual Info: Yuasa Battery Sales UK Ltd MODEL No: 1AA (GENERIC) Description: AA SIZE NI-CAD Capacities Available : 500,600,700,800,900 and 1000 mAh Specification D1 Nominal Capacity Nominal Voltage Charge current D2 d1 d2 H1 High Top (Not Standard) H2 Low Top (Standard)
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compass sensor
Abstract: magnetic compass analog compass Sensor circuit serial "compass Sensor" 19-SM-001-1 compass Sensor circuit hitachi magnetic sensor application note magnetic sensor circuit diagram Hitachi Metals
Contextual Info: 19-SM-001-1 Magnetic Compass Sensor Magnetic Compass Sensor 11bits Preliminary Data Sheet Hitachi Metals, Ltd. / Proprietary Page1 19-SM-001-1 Magnetic Compass Sensor 1. Block Diagram DGND X,Y Select ADC X,Y Select X Cal. DVcc Y Cal. Sensor Error flag Current
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19-sm-001-111bitscompass sensormagnetic compass+6analog compass sensor circuitserial "compass sensorcompass sensor circuithitachi magnetic sensor application notemagnetic sensor circuit diagramhitachi metals
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Eudyna TAPE
Abstract: washing powder
Contextual Info: ELM6472-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.0dB (Typ.) High PAE: add=36% (Typ.) Frequency Band: 6.4~7.2GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM6472-4PS is a power GaAs FET that is internally matched for
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C-Band Power marking E
Contextual Info: ELM5964-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: add=37% (Typ.) Frequency Band: 5.9~6.4GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM5964-4PS is a power GaAs FET that is internally matched for
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PRBS231-1
Abstract: STM-64
Contextual Info: JOG-01045 001 Optical Components OD9243N Rev. 5 [10. 2008] 10Gbps PIN-Preamplifier surface mount receiver module 1. DESCRIPTION The OD9243N is the 10Gbps receiver module which incorporates a high speed pin-photodiode and a High Gain trans-impedance amplifier TIA . This receiver is specifically designed for OC-192
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koike relays
Abstract: IEC60255 TOS8700 GP035 VH-6200 hp410
Contextual Info: Qualification Test Report 501-79386 Was S-15772 ~ 15793 2 October 2007 Rev. A 認定試験報告書 PCF-124D2M リレー PCF-124D2M Relay 1.はじめに Introduction 1.1 目 的 Purpose 本試験はリレー製品規格書 108-79386 Rev. O1 に規定された性能必要条件に合致しているか
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400H
Abstract: NJW1138 NJW1138L NJW1138M SDIP30 SDMP30 13pin d sub
Contextual Info: NJW1138 P R E L I M I N A LY AUDIO PROCESSOR • GENERAL DESCRIPTION The NJW1138 is an audio processor. It includes all of functions processing audio signal for TV, such as tone control, balance, volume, mute, NJRC original surround, and AGC functions. The NJRC original surround system reproduces natural
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Contextual Info: CDMC10D50/T150 Features • Metal compound molding type construction. • Magnetically shielded. • Qualified AEC-Q200 • Suitable for Large Current • Operating temperature range: - 40deg C~+150deg C including coil’s self temperature rise Applications
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