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20DBL Datasheets (2)

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Mimix Broadband

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20DBL0451		Mimix Broadband	8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler	Original	PDF	314.48KB	6
20DBL0629		Mimix Broadband	18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier	Original	PDF	210.95KB	6

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Lite-On Semiconductor Corporation LTR-S320-DB-L IR Emitter 940nm 150mW 2-Pin SMD T/R - Tape and Reel (Alt: LTR-S320-DB-L)
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Avnet Americas	LTR-S320-DB-L	Tape & Reel		20 Weeks	24,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	LTR-S320-DB-L				100	1 - 10 - 100 $0.09 1000 $0.07 10000 $0.05	Get Quote
Avnet Asia	LTR-S320-DB-L			12 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments SN74HC20DBLE NAND Gate, HC/UH Series, 2-Func, 4-Input, CMOS, PDSO14
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Vyrian	SN74HC20DBLE		7,810			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments 74AC11620DBLE Bus Transceiver, AC Series, 1-Func, 8-Bit, True Output, CMOS, PDSO24
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Vyrian	74AC11620DBLE		6,325			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments SN74HC4020DBLE Binary Counter, HC/UH Series, Asynchronous, Negative Edge Triggered, 4-Bit, Up Direction, CMOS, PDSO16
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Vyrian	SN74HC4020DBLE		6,101			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Texas Instruments SN74ABT620DBLE Bus Transceiver, ABT Series, 1-Func, 8-Bit, Inverted Output, BICMOS, PDSO20
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Vyrian	SN74ABT620DBLE		3,267			1 - 10 - 100 - 1000 - 10000 -	Get Quote

20DBL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
l0629 Abstract: 20DBL0629 84-1LMI A102 395 2XF Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier September 2005 - Rev 01-Sep-05 20DBL0629 Features Chip Device Layout tio n Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression	Original	01-sep-05 20dbl0629 mil-std-883 l0629 +384-1lmi a102 395 2xf	PDF
20DBL0451 Abstract: 84-1LMI XR1002 pHEMT transistor MTBF Contextual Info: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler 20DBL0451 April 2005 - Rev 01-Apr-05 Features Chip Device Layout tio n Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +16 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing	Original	20dbl0451 01-apr-05 xr1002 mil-std-883 +284-1lmi phemt transistor mtbf	PDF
CFU450 Abstract: TA31133FN TA31133 Murata BPF filter CAPACITOR 1000pf 25Q 328 CDB450C CDB450 Contextual Info: IF DETECT ICs TENTATIVE DATA FM IF DETECTOR 1C FOR CELLULAR PHONE FEATURES • 2 IF A M P circuits can limit a band w idth according to a usage. • IF A M P has high performance carrier detection RSSI . • Low current consumption • Operating supply voltage range : 2.7~6.0V	OCR Scan	ssop16 ta31133fn-1 450khz ta31133fn-6 +8cfu450 ta31133fn ta31133 murata bpf filter capacitor 1000pf 25q 328 cdb450c cdb450	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm May 2008 - Rev 30-May-08 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs	Original	30-may-08 x1001-qk xx1001-qk	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description	Original	07-mar-07 x1001-qk xx1001-qk-0l00 xx1001-qk-0l0t +2xx1001-qk-ev1 xx1001-qk	PDF
XX1001-QK Abstract: XX1001-QK-0L00 XX1001-QK-0L0T XX1001-QK-EV1 07MAR07 Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2007 - Rev 07-Mar-07 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description	Original	07-mar-07 x1001-qk xx1001-qk-0l00 xx1001-qk-0l0t +3xx1001-qk-ev1 xx1001-qk 07mar07	PDF
Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	xx1001-bd mil-std-883	PDF
20DBL0629 Abstract: XX1001-BD XX1001-BD-000V XX1001-BD-EV1 Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	xx1001-bd mil-std-883 20dbl0629 xx1001-bd-000v +1xx1001-bd-ev1	PDF
pHEMT transistor MTBF Abstract: 20DBL0451 DM6030HK TS3332LD XR1002 XX1005-BD XX1005-BD-000V XX1005-BD-EV1 X1005-BD Contextual Info: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler X1005-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +16 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883	Original	x1005-bd 17-jan-07 xr1002 mil-std-883 +7xx1005-bd xx1005-bd-000v xx1005-bd-ev1 phemt transistor mtbf 20dbl0451 dm6030hk ts3332ld	PDF
20DBL0629 Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-jan-07 x1001-bd mil-std-883 xx1001-bd-000v +8xx1001-bd-000w xx1001-bd-ev1 xx1001 20dbl0629 dm6030hk ts3332ld xx1001-bd 395 2xf	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-jan-07 x1001-bd mil-std-883 xx1001-bd-000v +3xx1001-bd-000w xx1001-bd-ev1 xx1001	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	18-mar-08 x1001-bd mil-std-883 devicex1001-bd-000w +2xx1001-bd-ev1 xx1001	PDF
Contextual Info: 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler X1005-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +16 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883	Original	17-jan-07 x1005-bd xx1005-bd xr1002 +4mil-std-883 xx1005-bd-000v xx1005-bd-000w xx1005-bd-ev1	PDF
XX1001-QK Abstract: XX1001-QK-EV1 Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm March 2009 - Rev 21-Mar-09 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description	Original	21-mar-09 x1001-qk xx1001-qk xx1001-qk-ev1	PDF

XX1001-QK Abstract: XX1001-QK-0L00 XX1001-QK-0L0T XX1001-QK-EV1 Contextual Info: 18.0-21.0/36.0-42.0 GHz Doubler and Power Amplifier, QFN, 7x7mm October 2006 - Rev 04-Oct-06 X1001-QK Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression General Description	Original	04-oct-06 x1001-qk xx1001-qk xx1001-qk-0l00 +2xx1001-qk-0l0t xx1001-qk-ev1	PDF
XX1001-BD-EV1 Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	03-nov-08 x1001-bd mil-std-883 xx1001-bd-000v +6xx1001-bd-ev1 xx1001 20dbl0629 dm6030hk ts3332ld xx1001-bd	PDF
2117F Abstract: LC75394E Y112 .0001 thd bu 1011 149-2G 03A33 f4vi L1AA Contextual Info: > ì* 3 - KNo. N 5 0 7 9 A / SM àYO I N»5079 t Í L f r k X . < ^ ¿ à ? V \ ¥ » & .= . a - X CMOS LSI LC75394E- 7 LC75394BÜ, * ' <•? > A , 5>'* > V 4 4 •)', A ÏÏW i& iL <D fi -> 'i 7 A ' T - 9 A t ! U J: 5 u > h a ■ JV Tr è Z>H i 'K M •> i X* * á „	OCR Scan	lc75394e -20dbi -20db -32dbli +11-32db -52db -70dbli 2117f y112 0001 thd bu 1011 149-2g 03a33 f4vi l1aa	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	04-oct-06 x1001-bd mil-std-883 xx1001-bd-000v +3xx1001-bd-000w xx1001-bd-ev1 xx1001	PDF