20A PNP Search Results

PNP TRANSISTOR 1k

Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A

mj11011

Abstract: transistor 20a MJ11012 20A pnp
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A

COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS

Abstract: transistor 20a MJ11013 MJ11014
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A

0811 405 028

Abstract: 6TPD470M5 f1f9 pwm schematic buck converter
Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision

diode H5

Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision

Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator FEATURES DESCRIPTION Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision

K/SAC305 reflow bga

Contextual Info: LTM4637 20A DC/DC µModule Step-Down Regulator Features Description Complete 20A Switch Mode Power Supply 4.5V to 20V Input Voltage Range 0.6V to 5.5V Output Voltage Range ±1.5% Total DC Output Voltage Error –40°C to 125°C n Differential Remote Sense Amplifier for Precision

transistor A106

Abstract: transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
Contextual Info: N LM2639 Evaluation Board V.2 Test Procedures 4/9/99 The LM2639 evaluation board V.2 is designed to handle 20A output current under room temperature with no air flow. Efficiency is around 80% at 2V, 20A. With very little air flow, such as that provided by a typical ATX power supply Muffin fan, the board can handle 25A to 30A

TRANSISTOR 300v

Contextual Info: OPTEK TECHNOLOGY INC 4fiE D • b7Tfl5flD 00013^4 bZS ■ Product Bulletin OTC433Ü August 1990 OTK '^ |/> — - — - T - y 7 - i S Fast Switching PNP Power Transistor Type OTC433Q - 300V, 20A

transistor pnp 12V 1A Continuous Current Peak 2A

Abstract: diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.

ic 3A hfe 500

Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.

FCX1149A

Abstract: DSA003683
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: Ordering number:ENN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;

Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1149A ISSSUE 1 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 45mv Typ. Extremely Low Equivalent On-resistance;

FCX1047A

Abstract: FCX1147A DSA003683
Contextual Info: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1147A ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 20A Peak Pulse Current Excellent HFE Characteristics up to 20 Amps Extremely Low Saturation Voltage E.g. 25mv Typ. Extremely Low Equivalent On-resistance;

EN3716

Abstract: 2SB1511
Contextual Info: Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :

2SB833

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB833 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: . High Collector Current : Ic=-30A • High DC Current Gain : hFE 2 =1000(Min.) (VCE=-5V, Ic =-20A) . Monolithic Construction with Built-In Base-Emitter

EN3716

Abstract: 2039A 2SB1511
Contextual Info: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.

2SD1239

Abstract: 2SB923 2SD123
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB923 DESCRIPTION •High Collector Current: IC= -20A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -10A ·Complement to Type 2SD1239 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

B904

Abstract: D1213 2SB904 D152 2SD121
Contextual Info: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 us A TELEPHONE: 973 376-2922 (212)227-6005 MJW21191 Silicon PNP Power Transistor DESCRIPTION • DC Current Gain Specified up to 8.0 Amperes at Temperature • HighSOA:20A, 18V, 100ms • TO-3PN Package • Complement to Type MJW21192

MJ15003 MJ15004

Abstract: MJ15003 300 watts amplifier MJ15004 mj15003 transistor MJ15003 TRANSISTOR MJ15004 mj15003 equivalent NPN 250W TO-3 140V 20A
Contextual Info: MJ15003, MJ15004 20A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: • High Power Dissipation

pin diagram of ic 4066

Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Contextual Info: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.