2048 X8 RAM Search Results

Contextual Info: □ M N 1 0 1 D 0 3 A |Type / 0 3 D / F 0 3 D MN101D03A under development / 03D (under development) / F03D | ROM (x8-bit) 32K/64K/64K (built-in flash EEPROM) | RAM (x8-bit) 1024/2048/2048 | Minimum Instruction Execution Time 0.10 ms (at 4.5 to 5.5V, 20MH z )

Contextual Info: □ M N 1 0 1 C 1 2 D |Type / 1 2 F / 1 2 G MN101C12D under planning / 12F (under planning) / 12G (under development) | ROM (x8-bit) 64K/96K/128K (External memory can be expanded) | RAM (x8-bit) 2048/2048/4096 (External memory can be expanded) | Minimum Instruction Execution Time

Contextual Info: □ MN101C06A/06D MN101C06A under planning / 06D (under development) |Type | ROM (x8-bit) 32K/64K | RAM (x8-bit) 1024/2048 | Minimum Instruction Execution Time 0.238 [is (at 2.7 to 5.5V, 8.4MHz) 122 MS (at 2.7 to 5.5V, 32.768kHz) | Interrupts • RESET • Watchdog

Contextual Info: □ MN675567 / 47 MN675567 / 47 Type 1 ROM (x8-bit 72K/56K 1 RAM (x8-bit) 2048/1536 1 Minimum Instruction Execution Time 0.25ms (at 4.0 to 5.5V, 16MHz) with Main Clock operated 122ms (at 2.7 to 5.5V, 32.768kHz) With Sub-clock operated I Interrupts ’ RESET

pwm20

Abstract: a02h AD10 MN101D01C AD2HA
Contextual Info: □ MN101D01C / D / E / F / G 1 Type 1 ROM x8-bit 4 8 K /6 4 K /8 0 K /9 6 K /1 2 8 K • RAM (x8-bit) 1536 / 2048 / 2304 / 2560 / 3072 H Minimum Instruction Execution Time M N 101D 01C W ith M ain Clock operated D/ E/ F/ G 0 .1 3 9 7 us (at 4 .0 to 5 .5 V , 1 4 .3 2M H z)

Contextual Info: □ M N 10 1C 0 6 A / 06D 1 Type MN101C06A under planning / 06D (under development) H ROM (x8-bit) 32K/64K 1 RAM (xS-hit) 1024/2048 1 Minimum Instruction Execution Time 0.10 ns (at 4.5 to 5.5V, 20MHz) 0.25 MS (at 2.7 to 5.5V, 8MHz) 1.00 jis (at 2.0 to 5.5V, 2MHz)*

Contextual Info: H M 6 1 1 7 L F P - 3 ,H M 6 1 1 7 L F P -4 2048-word x8-bit High Speed S ta tic C M O S RAM •FEATURES • • • » High Density Small-sized Packaged Projection Area Reduced to One-Thirds of Conventional DIP Thickness Reduced to a Half of Conventional D IP

Contextual Info: CMOS SyncFIFO 6 4 x 8 , 2 5 6 x 8 , 5 12 x8 , 1024 x 8, 2048 x 8 and 4096 x 8 FEATURES: • • • • • • • • • • • • • • • • • IDT72420 IDT72200 IDT72210 IDT72220 IDT72230 IDT72240 SyncFIFO™ are very high-speed, low-power First-In, FirstOut FIFO m emories with clocked read and write controls.

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

NEC 421000

Abstract: 421000 MC-421000A8B MC-421000-SERIES MC-421000A9B MC-421000A4A MC-421000A4B MC-421000A5A MC-421000A5B MC-421000A8A
Contextual Info: MC-421000-SERIES 1,048,576 x n-BIT a V f c w -DYNAMIC CMOS RAM MODULES O rdering Information D escription The MC-421000-series modules offer 1,048,576 words in 4_ 8- or 9-b it configurations. The modules are based on N E C ’s //P D 4 2 1 0 0 0 , //P D 4 2 1 0 0 1 . and

Contextual Info: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles

PIC16F618

Abstract: ic pic16f618 led pwm Controlled with Pic16F84 motor control using PIC16f887 LCD AC162 PIC16F877 Data Logger pic16f72 3 PHASE MOTOR CONTROL PIC16f84a to PIC18f PIC18F6522 control dc motor speed using pwm Pic16F877A
Contextual Info: January - March 2006 2006 Product Selector Guide Product Profile 8-bit PIC Microcontrollers Microchip’s PIC® family of microcontrollers combine high performance, low cost and small package size to offer the best price/ performance ratio in the industry. Based on a powerful RISC core, these 8-bit PIC® microcontrollers fall into three product architecture

AN1095

Abstract: PIC18F47J53 PIC24FJ64GB004 PIC18F26K20 PIC16F1823 PIC12F1822 applications PIC 18F SPI pic18f67k22 programming PIC18 PIC16F1827 ssop
Contextual Info: Corporate Focus Product Selector Guide First Half 2010 Focus Product Selector Guide Featuring: 8-, 16- and 32-bit PIC Microcontrollers dsPIC® Digital Signal Controllers Analog & Interface Products Serial EEPROMs, Serial SRAMs and RF Products www.microchip.com

PIC16f877a example code spi master configuration

Abstract: 4431 mosfet PIC12f675 adc example codes RS485 communication with pic18f4520 PIC16f627 example codes pwm PIC18f452 example uart codes PIC12f509 example codes PIC16f877a example codes transceiver pic16f877a c code programming example for temperature monitoring pic16f72 3 PHASE MOTOR CONTROL
Contextual Info: 2nd Half 2004 July - September 2004 Product Selector Guide Product Profile PICmicro Microcontrollers Microchip’s PICmicro® family of microcontrollers combine high performance, low cost and small package size to offer the best price/ performance ratio in the industry. Based on a powerful RISC core, the PICmicro architecture provides users an easy migration path

PIC16F1787

Abstract: ar1020 PIC18F25K80 PIC16F17 PIC16F1786 PIC16F1509 PIC18 lcd 39vf020 PIC16F1503 PIC16F1782
Contextual Info: Corporate Focus Product Selector Guide First Half 2011 Focus Product Selector Guide Featuring: 8-, 16- and 32-bit PIC Microcontrollers dsPIC®Digital Signal Controllers Analog & Interface Products Serial EEPROMs, Serial SRAMs, NOR Flash Memory Wireless and RF Products

MT29F4G08ABADAWP

Abstract: Micron MT29F8G08 MT29F8G16 MT29F4G16ABBDAH4 MT29F8G16ADBDAH4 MT29F4G08abada MT29F4G08ABA MT29F4G08ABADAH4 MT29F8G08A MT29F4G08
Contextual Info: Micron Confidential and Proprietary 4Gb, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F4G08ABADAWP

Abstract: MT29F4G08abada MT29F8G16 MT29F4G08ABADAH4 MT29F4G08ABBDA MT29F4G16 MT29F4G08ABA MT29F4G08 MT29F16G08 MT29F4G08ABBDAHC
Contextual Info: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

Contextual Info: S30MS-R ORNANDTM Flash Family S30MS04GR, S30MS02GR, S30MS01GR, S30MS512R 4 Gb/2 Gb/1 Gb/512 Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology Data Sheet S30MS-R ORNANDTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

RAM 2112 256 word

Abstract: S30MS04GR S30MS512R Spansion NAND Flash DIE S30MS01GR S30MS02GR S30MS02GR* DIE
Contextual Info: S30MS-R ORNANDTM Flash Family S30MS04GR, S30MS02GR, S30MS01GR, S30MS512R 4 Gb/2 Gb/1 Gb/512 Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology Data Sheet Advance Information S30MS-R ORNANDTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 2M X8 CL3 TS4MLS64V8P Description Placement The TS4MLS64V8P is a 4M bit x 64 Synchronous Dynamic RAM high-density for PC-100. The TS4MLS64V8P consists of 16pcs CMOS 2Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and a

HM65W8512

Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
Contextual Info: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.

Contextual Info: 168PIN PC133 Registered DIMM 512MB With 32M X8 CL3 TS64MLR72V6F Description Placement The TS64MLR72V6F is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V6F consists of 18pcs 16Mx8 bits Synchronous DRAMs, 3pcs drive ICs for

Contextual Info: K6F8008S2M Family CMOS SRAM Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 25, 1999 Preliminary 1.0 Finalize - Adopt new code. - Improve VIN, VOUT max. on A

Contextual Info: 168PIN PC133 Registered DIMM 512MB With 32M X8 CL3 TS64MLR72V6F Description Placement The TS64MLR72V6F is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V6F consists of 18pcs 16Mx8 bits Synchronous DRAMs, 3pcs drive ICs for