2022I Search Results

2022C

Abstract: 2022e
Contextual Info: SGM2022 Dual, Low Dropout, 250mA LDO Regulators GENERAL DESCRIPTION FEATURES The SGM2022 is a dual, low-power, low-dropout, CMOS y Highly Accurate: ±2% linear voltage regulators. It operates from a 2.5V to 5.5V y Ultra-Low Dropout Voltage: input and delivers up to 250mA at each channel.

w2h transistor

Abstract: CD4043A GE T900 transistor w2h
Contextual Info: 37E D HARRIS SEMICONJ SECTOR 43D2271 7 3875081 G E SOLID STATE 0051434 01E 0 »HAS D 13620 _ T - M U - o '7 - / 5 ‘ CD4043A, CD4044A Types CMOS Quad 3-State R/S Latches Quad NOR R/S Latch - CD4043A Quad NAND R/S Latch - CD4044A The RCA-CD4043A types are quad crosscoupled 3-state CMOS NOR latches and the

AT88SC0204C

Abstract: AT88SC0204C-MJ AT88SC0204C-MP AT88SC0204C-PU AT88SC0204C-SU AT88SC0204C-WI MS-001 2022HS
Contextual Info: Features • One of a Family of 9 Devices with User Memories from 1 Kbit to 256-Kbit • 2-Kbit 256 Bytes EEPROM User Memory • • • • • – Four 64-byte (512-bit) Zones – Self-timed Write Cycle – Single Byte or 16-byte Page Write Mode – Programmable Access Rights for Each Zone

Contextual Info: 37E D HARRIS SEMICONJ SECTOR 4302271 0051434 0 » H A S 7 3875081 G E SOLID STATE D 01E 13620 _T -M U - o '7 -/5 ‘ CD4043A, CD4044A Types CMOS Quad 3-State R/S Latches Quad NOR R/S Latch - CD4043A Quad NAND R/S Latch - CD4044A The RCA-CD4043A types are quad crosscoupled 3-state CMOS NOR latches and the

AT88SC0204C-MJ

Abstract: AT88SC0204C AT88SC0204C-MP AT88SC0204C-PU AT88SC0204C-SU AT88SC0204C-WI
Contextual Info: Features • One of a Family of 9 Devices with User Memories from 1 Kbit to 256-Kbit • 2-Kbit 256 Bytes EEPROM User Memory • • • • • – Four 64-byte (512-bit) Zones – Self-timed Write Cycle – Single Byte or 16-byte Page Write Mode – Programmable Access Rights for Each Zone

MAX2599

Abstract: max2547 MAX19693 MAX19692 MAX5881 motorola BTS 3900 LDMOS PA Driver IC, Motorola BTS 3900 max2597 MAX2044
Contextual Info: Wireless Infrastructure 4th Edition October 2009 RF-to-bits leadership technology in wireless infrastructure Cellular macrocell, microcell, and picocell base stations Maxim Signal-Chain Solutions Femtocell base stations Microwave point-to-point base stations

Contextual Info: DEVELOPMENT DATA TDA8443A T h is data sheet c o n ta in s advance in fo r m a tio n and s p e cifica tio n s are su b je ct to change w ith o u t n o tice . BUS l2C-BUS CONTROLLED YUV/RGB SWITCH G E N E R A L D ES C R IPTIO N The T D A 8 4 4 3 A is a general purpose two-channel sw itch fo r Y U V o r RGB signals. One channel provides

Contextual Info: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min

Contextual Info: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min

AT88SC0204C

Abstract: AT88SC0204C-MJ AT88SC0204C-MP AT88SC0204C-PU AT88SC0204C-SU AT88SC0204C-WI MS-001
Contextual Info: Features • One of a Family of 9 Devices with User Memories from 1 Kbit to 256-Kbit • 2-Kbit 256 Bytes EEPROM User Memory ⎯ Four 64-byte (512-bit) Zones ⎯ Self-timed Write Cycle ⎯ Single Byte or 16-byte Page Write Mode ⎯ Programmable Access Rights for Each Zone

1F MARKING SOT23-6

Abstract: MARKING A SOT23-6 2022C 2022h SGM2022-EYN6/TR voltage regulator sot23-6 SOT23-6 MARKING 310 2022e 2022i sot23-6
Contextual Info: Dual, Low Dropout, 150mA RF - Linear Regulators SGM2022 GENERAL DESCRIPTION FEATURES The SGM2022 is a dual, low-power, low-dropout, CMOS linear voltage regulators. It operates from a 2.5V to 4.5V input and delivers up to 150mA at each channel. - Highly Accurate: 2%

AT88SC0204C

Abstract: AT88SC0204C-MJ AT88SC0204C-MP AT88SC0204C-PU AT88SC0204C-SU AT88SC0204C-WI 2022i
Contextual Info: Features • One of a Family of 9 Devices with User Memories from 1 Kbit to 256-Kbit • 2-Kbit 256 Bytes EEPROM User Memory ⎯ Four 64-byte (512-bit) Zones ⎯ Self-timed Write Cycle ⎯ Single Byte or 16-byte Page Write Mode ⎯ Programmable Access Rights for Each Zone

Contextual Info: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min

Contextual Info: TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D D D D D D Supply Current . . . 300 A Max High Unity-Gain Bandwidth . . . 2 MHz Typ High Slew Rate . . . 0.45 V/μs Min

Contextual Info: Features • One of a Family of 9 Devices with User Memories from 1 Kbit to 256-Kbit • 2-Kbit 256 Bytes EEPROM User Memory • • • • • – Four 64-byte (512-bit) Zones – Self-timed Write Cycle – Single Byte or 16-byte Page Write Mode – Programmable Access Rights for Each Zone

sh 94v-0

Abstract: 5559 MOLEX Ras 1220 SH A 94V-0 5559-06P MOLEX 5559-02P MOLEX 5559 series SH 1517 5559-04P 5559
Contextual Info: 5 55 9 CKT. S IZ E DIM. A DIM. B .33 1 6 .543 13.80 (8.40) 8 12 .4 9 6 .7 0 9 ( 12.60) (18.00) .661 .874 ( 16.80) (2 2.20) .827 1.039 (2 1.00) (2 6 .4 0) .9 9 2 14 1.205 (25.20) (3 0 .6 0 ) 1.157 16 1.370 (29.40) 18 (34.80) 1.323 1.535 (3 3 .6 0) (3 9 .0 0)

iso 7816-3

Contextual Info: Atmel AT88SC0204C Atmel CryptoMemory, 2Kbit SUMMARY DATASHEET Features • • One of a family of nine devices with user memories from 1Kbit to 256Kbit 2Kbit 256 bytes EEPROM user memory • • • • • Four 64-byte (512-bit) zones Self-timed write cycle

Contextual Info: AT88SC0204C Atmel CryptoMemory, 2-Kbit SUMMARY DATASHEET Features • • One of a family of nine devices with user memories from 1-Kbit to 256-Kbit 2-Kbit 256 bytes EEPROM user memory • • • • • Four 64-byte (512-bit) zones Self-timed write cycle