20147 Search Results

1476b

Contextual Info: SAW Bandpass Filter 201476B 1. Features z IF Bandpass Filter z Single-Ended Operation z Ceramic Surface Mount Device SMD Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device (ESD) 2. Package Dimensions 19.00±0.2

TE 1820

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um outp ut power, it may be used fo r both CW and PEP

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, com mon em itter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts m inim um ou tput power, it m ay be used fo r both CW and PEP

ericsson 20147

Abstract: PTB20147 RF TRANSISTOR 2.5 GHZ 20147 IEC-68-2-54
Contextual Info: e PTB 20147 2.5 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

bvoe

Contextual Info: ERICSSON ^ PTB 20147 2.5 Watts, 1800 - 2000 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • • • The 20147 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.0 GHz frequency band. It is rated at 2.5 Watts minimum output

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION REV PER 0G3H— 0 0 3 2 — 04 DATE DWN APVD 27JAN04 JR MS D D n ±.005 ,275 — DIA, © '±.015

Contextual Info: D S90C 3201 DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter T ex a s In s t r u m e n t s Literature Number: SNLS192C Semiconductor DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter General Description Features The DS90C3201 is a 3.3V single/dual FPD-Link 10-bit color

F1505-01

Abstract: 32364 V031511 Terminal crimping training 32896 DIN 3110
Contextual Info: Professional Insulated Tools Supporting Arc Flash Protection Innovations that work 10,000 Volt Tested 1000 Volt Rated Toll Free: 800 494-6104 2 Arc Flash Protection: Wiha Insulated tools can be a vital component in your Arc Flash protection strategy. What is Arc Flash?

Contextual Info: VLMU3100 www.vishay.com Vishay Semiconductors UV SMD LED PLCC-2 FEATURES • UV SMD LED with exceptional brightness • High efficient InGaN technology • Long life time due to silicone casting • Compatible equipment with automatic placement • EIA and ICE standard package

Contextual Info: VLMB31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave

408-1379

Abstract: AMP catalog 82003 komax 433 nas 7103 KOMAX 333 operating instructions komax 200277-2 201355-1 201692-4 21393
Contextual Info: RoHS Ready M Series Pin and Socket Connectors AMP M Series Pin and Socket Connectors NOTE: All part numbers are RoHS Compliant M Series Connectors Product Facts • Most connectors intermateable with connectors made to MIL-C-28748 requirements Standard Housings

lvds dual displays full hd DS90C3201

Abstract: sustain circuits for plasma tv
Contextual Info: DS90C3202 3.3V 8 MHz to 135 MHz Dual FPD-Link Receiver General Description Features The DS90C3202 is a 3.3V single/dual FPD-Link 10-bit color receiver is designed to be used in Liquid Crystal Display TVs, LCD Monitors, Digital TVs, and Plasma Display Panel

Contextual Info: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101

Contextual Info: KSMD7N30 / KSMU7N30
   TO-252 TO-251   % % % % % % & &' *+
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Contextual Info: KSMD19N10L / KSMU19N10L 100V LOGIC N-Channel MOSFET TO-252 TO-251 Features • • • • • • 15.6A, 100V, RDS on = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: The most beautiful data are in your images. HoKaWo will acquire them … 1 2) HoKaWo Software, U9304 It is a wonderful coincidence that it is possible to have meaningful scientific information embedded within images that we can experience as beautiful on a purely human level.

Contextual Info: KSMD5N50 / KSMU5N50
   TO-252 TO-251   $ $ $ $ $ $ % &'& *
+, -Ω.)+,() /   0 ,% 1 /0 - &1     ,(2 !  3 !!4  " 
   

Contextual Info: KSMD6N40 / KSMU6N40
   TO-252 TO-251   $ $ $ $ $ $ % &'% *
+, ,-Ω.)+,() /   0 ,1 2 /0 3 -2     ,(4 !  5 !!6  " 
  

Contextual Info: KSMD2N100/KSMU2N100 1000V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 1.6A, 1000V, RDS on = 9Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD5N60C / KSMU5N60C N-Channel MOSFET 600 V, 2.8 A, 2.5 Ω Features TO-251 TO-252 • 2.8 A, 600 V, RDS on = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant Description

Contextual Info: KSMD5N15 / KSMU5N15
  TO-252 TO-251   % % % % % % & '  *+,-
.+ /Ω0,.)+, 1   2 * & 3 12 4 *3     )+5 !  6 !!$  " 
  
 

Contextual Info: KSMD4N25 / KSMU4N25 N-Channel MOSFET 250 V, 3 A, 1.75Ω TO-251 TO-252 Features • 3 A, 250 V, RDS on = 1.75 Ω (Max) @VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is

Contextual Info: KSMD3N50C/KSMU3N50C 500V N-Channel MOSFET TO-252 TO-251 Features • 2.5 A, 500 V, RDS on = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability

Contextual Info: KSMD12N20LTM_F085 200V Logic Level N-Channel MOSFET Features TO-252 • • • • • • • 9.0A, 200V, RDS on = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability