2013S Search Results

VJ HIFREQ

Abstract: WSBM8518
Contextual Info: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 Proximity Sensor with I2C Interface WSBM8518 Power Metal Strip Battery Shunt Resistor with Molded Enclosure

Contextual Info: POLYPROPYLENE CAPACITOR TYPE 2013S EXTENDED FOIL, FLAME RETARDANT EPOXY COATED, PULSE APPLICATION GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -40°C to 85°C 2. VOLTAGE RANGE: 1000 and 1500 to 2000 VDC. 3. CAPACITANCE RANGE: range: .001 to 0.047 Mfd. tolerance: ± 3%, ± 5%, and ±10%

Contextual Info: POLYPROPYLENE CAPACITOR TYPE 2013S EXTENDED FOIL, FLAME RETARDANT EPOXY COATED, PULSE APPLICATION GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -40°C to 85°C 2. VOLTAGE RANGE: 1000 and 1500 to 2000 VDC. 3. CAPACITANCE RANGE: range: .001 to 0.047 Mfd. tolerance: ± 3%, ± 5%, and ±10%

2013S

Abstract: DO 350
Contextual Info: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION TYPE 2013S SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C. 1000 & 1500VDC ~ 2000VDC.

2013S

Contextual Info: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION TYPE 2013S SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C. 1000 & 1500VDC ~ 2000VDC.

WSBM8518

Contextual Info: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 I2Cインターフェース付き近接センサー WSBM8518 1 2 モールドケース付きPower Metal Strip

Contextual Info: Tecate Group Film Capacitors POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND TYPE 2013S POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C.

Contextual Info: MOTION CONTROLLER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC4210 DATASHEET Low cost 1-Axis Stepper Motor Controller for TMC26x and TMC389 Stepper Driver SPI Communication Interface for Microcontroller and Step/Direction interface to Driver APPLICATIONS CCTV, Security

transistor j241

Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

Contextual Info: Audio Transformer MIL-T-27E High Reliability : “Red Spec” Series SP- 42 Description: Triad’s high reliability audio transformers provide the durability and precision required in today’s demanding designs. These transformers are available for a wide variety of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

8029L

Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
Contextual Info: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

j295

Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
Contextual Info: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage

Film Capacitors

Abstract: 250v 105j capacitor 105j 250v 105j 250v capacitor 105j 1319
Contextual Info: Tecate Group Film Capacitors PART NUMBERING SYSTEM PART NUMBER EXAMPLE MORE EXAMPLES If formed to 5mm L/S: 914-250/104K10B1/5. If cut & formed to 5mm L/S: 914-250/104K10B5/5. If cut & formed to 5mm L/S & 3mm L/L: 914-250/104K10B1/5#1. #1 = one deviation from std ex.: L/L

Contextual Info: Cosel単片2013-shanghai.ai 1 2013-9-27 9:32:26 High-Quality DIN-Rail Power Supplies for Industrial Applications Greener than Ever C M Y Safety agency approvals CM MY CY Needless to add UL60950-1, C-UL CSA60950-1 , UL508 and ANSI/ISA12.12.01 are approved. GL safety standard

Contextual Info: DEMO MANUAL DC1082A LTC1407A, LTC1403A, LTC1407A-1, LTC1403A-1, LTC2356-14, LTC2355-14, 14-Bit, 3.5Msps/3Msps/2.8Msps SAR ADCs Description Demonstration circuit 1082A features the LTC 1407 family of SAR ADCs. This quick start guide will focus on DC1082A-A which uses the LTC1407A-1, a bipolar,

WELWYN c21

Contextual Info: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous

ATC600F470BT250XT

Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

c5750x7s2a106m

Abstract: AD255A mosfet mttf aft20p06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

marking dj-u sot-23-5

Abstract: MIC2000 MIC2003 MIC2013 FD08
Contextual Info: MIC2003/2013 Current Limiting Circuit Protector General Description Features MIC2003 and MIC2013 are high-side current limiting devices, designed for power distribution applications in PCs, PDAs, printers and peripheral devices. MIC2003 and MIC2013 are thermally protected and will

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.

S5908

Abstract: 20135G-3
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. -29.01 [1 . 1 42] TYP + 11 99 [ .472] . 4 . 34 [.171] TYP LTR DESCRIPTION DATE K REDRAWN W/0 CHANGE PER EC 0 0 2 0 - 1 2 9 9 - 9 5 04 DEC 95

csc 5151 a

Abstract: csc 5151 526h 5623S 614y 823G 615Y 423H 327d 328h
Contextual Info: CHINA SEMICONDUCTOR 2SE » • T~ q-1 - 3 3 SOTTESO DGDDDO1! 0 NUMERIC/ALPHANUMERIC DISPLAY GENERAL INFORMATION Part Number System CS X - A B C D J T CHINA SEMICONDUCTOR PRODUCT S-SINGLE DIGIT D-DUAL DIGIT COLOR CODE R: RED H: BRIGHT RED E: ORANGE RED S: SUPER-BRIGHT RED