200X200X Search Results

HS-EMC200

Abstract: HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120
Contextual Info: ALUMINIUM HOUSED METAL CLAD BRAKING RESISTORS T y p e : EMCH 100 \ \ 80 1 70 2 60 5 50 NX "ninn © \ T yp e : EMCV V S<5s\ NN 10 0 200 275 300 A m b ie n t te m p e ra tu re °C On Heat Sink 60W~500W HEATSINK SIZE 60W-120W : 200X200X3mm Free Air 60W~150W

BBC OS 0,9 4A

Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.

3052p

Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Contextual Info: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies

ULM850-L2-PL-S0101U

Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Contextual Info: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated

KTB688B

Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25

KTD998

Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃

2SC512

Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Contextual Info: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .

EN2683B

Abstract: en2683 C5 100uf 25v LA4282 IC DIAGRAM LA4282
Contextual Info: Ordering number : EN2683B Monolithic Linear IC LA4282 For Use In Home Stereo, TV Applications 2-Channel 10W AF Power Amplifier Overview The LA4282 is an IC which seals a high-output power amplifier for TVs and monitors in a compact package. Features • High-power 2-channel AF power amplifier

uln2503

Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Contextual Info: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and

IRS30

Abstract: AC1500V IRS50
Contextual Info: Resistors And Resistive Applications IRS METAL CLAD ECONOMY RESISTOR The IRS30, IRS50 are slim and flat economical resistors. These models are ideal for applications where space and funds are at a premium. The most common applications for these models are motor

3050J

Contextual Info: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)

12v diode 10A

Contextual Info: 1-1-1 Linear Regulator IC SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 1.5A Symbol SI-3241N 35 45 Unit

SI-3122N

Contextual Info: 1-1-1 Linear Regulator IC SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A Symbol SI-3122N/3152N 30

DBA100

Abstract: DBA100C DBA100G
Contextual Info: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.

Contextual Info: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

X55205

Abstract: pbp 205
Contextual Info: BULK PACKAGING DEVICE TYPE PACKAGING SIZE MM BOX Q U A N TIT Y (EA> CARTON APPROX GROSS WEIGHT (KG) BOX CARTON BOX CARTON DO-41 L 196 x 84 x 20 4 5 0 x 2 1 0 x 250 1000 50K 0.38 20 DO-41 DO 15 196 x 84 x 20 450 x 210 x 250 1000 50K 0.38 20 DO-201 AD 305 x 93 x 59

S216S02 Application note

Contextual Info: S116S02 Series S216S02 Series IT rms ≤16A, Zero Cross type SIP 4pin Triac output SSR S116S02 Series S216S02 Series ∗ Non-zero cross type is also available. (S116S01 Series/ S216S01 Series) • Description ■ Agency approvals/Compliance S116S02 Series and S216S02 Series Solid State

STR7003 SI-8023

Abstract: STR7103 STR7000 SI-8020 STR7002 SI-8022 SI-8021 STR7001 SI-8020 STR7103 SI-8023 SI-8022 STR7001
Contextual Info: ●STR7000+SI-8020 Series STR7000+SI-8020 Series Separate Excitation Switching Type •Features • • • • • • • • High output current 6A:STR7000 series, 12A: STR7100 series High efficiency (70 to 90%) Wide DC input voltage range Built-in drooping type overcurrent protection circuit

transistor ktd718

Abstract: KTB688 KTD718
Contextual Info: SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌComplementary to KTD718. C ᴌRecommended for 45ᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING Ta=25ᴱ

ktd718

Abstract: ktd718 datasheet transistor ktd718 KTB688
Contextual Info: SEMICONDUCTOR KTD718 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q K I F FEATURES B E ᴌRecommended for 45ᴕ50W Audio Frequency C Amplifier Output Stage. G J H ᴌComplementary to KTB688. L D MAXIMUM RATING Ta=25ᴱ

al205

Abstract: KTA1036 KTC2016
Contextual Info: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING

SI-3522V

Abstract: 3522V SI-3132V 3052v 3122v SI3522V 3922V 3132V SI-3922V SI-3102V
Contextual Info: ●SI-3000V Series SI-3000V Series 3-Terminal, Low Dropout Voltage Dropper Type •Features • TO-3P package 3-terminal regulator • Output current: 2.0A • Low dropout voltage: VDIF≤1V at IO=2.0A • Built-in foldback overcurrent protection circuit

3052n

Abstract: G746 SI-3002N SI-3052N SI-3092N SI-3122N SI-3152N 3122N
Contextual Info: ●SI-3002N Series SI-3002N Series 3-Terminal, Full-Mold, Low Dropout Voltage Dropper Type •Features • Compact full-mold package equivalent to TO220 • Output current: 2.0A • Low dropout voltage: VDIF≤1V (at IO=2.0A) • Built-in foldback overcurrent, overvoltage, thermal protection circuits

3051N

Abstract: SI-3051N SI-3241N SI-3001N SI-3091N SI-3121N 3121N 3241n A 3051N
Contextual Info: ●SI-3001N Series SI-3001N Series 3-Terminal, Full-Mold, Low Dropout Voltage Dropper Type •Features • • • • Compact full-mold package equivalent to TO220 Output current: 1.5A Low dropout voltage: VDIF≤1V (at IO=1.5A) Built-in foldback overcurrent, overvoltage, thermal protection circuits