60HQ090
Abstract: international rectifier 200x200 SC200H100S5P
Contextual Info: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5P Description: 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK United States Support Docs: Datasheet Product ID Description SC200H100S5P 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK Parameter
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sc200h100s5p200x20060hq09028/10/20fier+1international rectifier
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SC200H100S5B
Abstract: 60HQ090 international rectifier
Contextual Info: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5B Description: 100V Size 200x200 Gen 1 SCHOTTKY DIE ON WAFER United States Support Docs: Datasheet Product ID SC200H100S5B Description 100V Size 200 x 200 Gen 1 SCHOTTKY Die On Wafer
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sc200h100s5b200x20060hq090sc200h10og+2sc200h100s5b4/13/2005international rectifier
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Contextual Info: Stand 3.2014 ePAPER 1.54“ - 200X200 PIXEL Vo rlä uf ig INKL. KONTROLLER SSD1606 MIT SPI Maße: 31,8 x 37,3 mm TECHNISCHE DATEN * * * * * * * * * * * * KONTRASTREICHSTE ePAPER LCD ANZEIGE WEITER BLINKWINKELBEREICH ELEKTROPHORETISCH-AKTIV-MATIRX DISPLAY ePAPER 1,54“ MIT 200x200 PIXEL
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200x200ssd1606d-82205 |
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HS-EMC200
Abstract: HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120
Contextual Info: ALUMINIUM HOUSED METAL CLAD BRAKING RESISTORS T y p e : EMCH 100 \ \ 80 1 70 2 60 5 50 NX "ninn © \ T yp e : EMCV V S<5s\ NN 10 0 200 275 300 A m b ie n t te m p e ra tu re °C On Heat Sink 60W~500W HEATSINK SIZE 60W-120W : 200X200X3mm Free Air 60W~150W
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0w-120w200x200x3mm50w-300w300x300x3mm+1400w-500w450x450x3mm50w-1000w600x600x3mmac1500vhs-emc200vnhs-emc200hs-emc500emc200hnhs-emc100emc400e255159400w-500whs-emc120
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Contextual Info: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2sb9932sd1363200x200x2mma150xl50x2mm+7100x100x2mm70x70x2mma35x35xlmma25x25xlmmabbc os 0,9 4a07380bbc os 0.9 4a
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200X200
Contextual Info: LC-A-B ●优质铝合金材料; ●适用于各种高精度电子天平等 ●天平台面尺寸:200X200 mm 额定容量(kg) 0.3,0.5,0.6,1,2,3,5 外 形 尺 寸 (Out Size) -技术参数(Technical data)-技术参数 单位 额定容量 Rated capacity
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200x200/30min3--15dc-20-v |
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WLFT 404
Abstract: L203 WLFT 405
Contextual Info: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25
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100x100100x200200x200wlft 404+2l203wlft 405
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PD-97256
Abstract: GML edf ID 416M 16SYJQ045C 200X200
Contextual Info: PD-97256 16SYJQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Characteristics Limits IF AV 16 VRRM 45 IFSM @ tp = 8.3ms half-sine 250 VF @ 16Apk, TJ =125°C 0.52 Description/Features Units The 16SYJQ045C Schottky rectifier has been expressly
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pd-9725616syjq045c16apkmil-prf-19500+2gml edf id 416m200x200
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200X200
Abstract: 35SGQ045 c 1384
Contextual Info: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150
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-93963a35sgq04535apko-254aa+3mil-prf-19500200x200c 1384
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16YQ045C
Abstract: 200X200
Contextual Info: PD - 94303C 16YQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Description/Features Characteristics The 16YQ045C Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated
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94303c16yq045co-257aamil-prf-19500+1200x200
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3052p
Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Contextual Info: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies
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qsi-3000psi-3000psi-3242psi-3122p+83052p3122p3242p3152psi-3052psi-3152psi3242p2a86
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ULM850-L2-PL-S0101U
Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Contextual Info: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
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850nm850nm-long-life-sm-vcselulm850-l2-pl-s0101uulm850-pm-tn-s46fzp+8ulm850-vp-pl-s46xop894nmulm850-pm-tn-s46xzpsm 850nm laser vcsel ulmtdlasvcsel smdmap 3959ulm vcsel reference
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KTB688B
Abstract: KTD718
Contextual Info: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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ktb688bktd718bktd718 |
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Contextual Info: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45~50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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ktd998ktb778200x200x2mm100x100x2mm+4300x300x2mmtransistor ktd998ktd998 transistorktb778 datasheet
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Contextual Info: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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pct752sc5102sc512800mw+82sa5102sa5122sc51262sc52sc55ai 012342sa1943-o 2sc52sc510 toshiba
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Contextual Info: カ タ ロ グ 印 ガス配管用管継手類 印 の製品が各所に使用されています。 ガスメータ継手P.13 ソフレミニ P.11 ポリエチレン ボールバルブP.19 EFチーP.5 ミニボールバルブP.19 PEトランジション継手P.5
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EN2683B
Abstract: en2683 C5 100uf 25v LA4282 IC DIAGRAM LA4282
Contextual Info: Ordering number : EN2683B Monolithic Linear IC LA4282 For Use In Home Stereo, TV Applications 2-Channel 10W AF Power Amplifier Overview The LA4282 is an IC which seals a high-output power amplifier for TVs and monitors in a compact package. Features • High-power 2-channel AF power amplifier
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en2683bla4282en2683c5 100uf 25v+1la4282 ic diagram
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uln2503
Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Contextual Info: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and
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mo500/ulf500irf200irf250irf300+13irf400irf5001-10ohmuln2503irf250 datasheetmetal-clad wire wound resistors1000v 200w transistoruln400rara irnw203uln200transistor irf250irf 024
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IRS30
Abstract: AC1500V IRS50
Contextual Info: Resistors And Resistive Applications IRS METAL CLAD ECONOMY RESISTOR The IRS30, IRS50 are slim and flat economical resistors. These models are ideal for applications where space and funds are at a premium. The most common applications for these models are motor
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irs30irs5005ohms-55-200c+420mohmac1500v-260ppm/c30min
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16SYQ045C
Abstract: 200X200
Contextual Info: PD - 93981 16SYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 16SYQ045C Units IF AV 16 A VRRM 45 V 250 A 0.85 V IFSM @ tp = 8.3ms half-sine VF @ 16Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150
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UZB6415
Abstract: UZB610 UZB6425 UZB501 UZB5015 UZB502 UZB5025 UZB6105 UZB641 UZB642
Contextual Info: UZB56.fm 9 y [ W Q O O O N S S œ @ ˛ j œ @ ª Q P R “ ULTRA-COMPACT PHOTOELECTRIC SENSORS UZB5/6 Series THE SOLUTION TO YOUR REQUIREMENTS! Miniaturization by Using Single Chip Optical IC! Clear Beam Spot by Using a Red LED Dot Light Source. The beam-receiving photodiode and the
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uzb56sus304551inchuzb6415+9uzb610uzb6425uzb501uzb5015uzb502uzb5025uzb6105uzb641uzb642
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C365-2SR2
Abstract: led chip
Contextual Info: C365-2SR2 TECHNICAL DATA UV LED, Chip Die GaN C365-2SR2 is a 280x280 µm UV LED chip die, based on GaN material. On forward bias, it emits a radiation of typical 1.0-1.5 mW at a peak wavelength of 365 nm. Specifications • • • • Structure: Substrate:
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c365-2sr2280x280led chip |
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C365-3SRA1
Abstract: led chip
Contextual Info: C365-3SRA1 TECHNICAL DATA UV LED high power chip die, 365nm Drawing All dimensions in µm Thickness: 120 µm ± 10 µm Storage Conditions Item Storage time Storage Temperature Storage Humidity Value 3 Months 5 … +35 °C 45 …85 % Specifications If=100mA, Ta=25°C
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c365-3sra1365nm100maled chip |
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3050J
Contextual Info: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)
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si-3000jsi-3050jsi-3090jsi-3120j/3150j+13050j
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