200V 3A IGBT Search Results

200v 3A IGBT

Contextual Info: N-CHANNEL IGBT SGP6N60UFD FEATURES TO-220 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

SGW6N60UFD

Contextual Info: N-CHANNEL IGBT SGW6N60UFD FEATURES D2-PAK * High Speed Switching * Low Saturation Voltage : VCE sat = 2.1 V (@ Ic=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls

200v 3A ultra fast recovery diode

Abstract: SGP6N60UFD SGP6N60
Contextual Info: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

200v 3A ultra fast recovery diode

Abstract: SGP6N60UFD
Contextual Info: IGBT SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

Q67040-S4340

Abstract: SKA06N60
Contextual Info: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

SGW6N60UFD

Contextual Info: IGBT SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching

FAST RECOVERY DIODE 200ns 8A 40V

Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

SGW6N60UFD

Contextual Info: SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

SGS6N60UFD

Contextual Info: IGBT SGS6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

SGP6N60UFD

Contextual Info: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: SGW6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: SGP6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: IGBT SGS6N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

G6N50E1D

Abstract: hGtp6N50E1D G6N50E1 G6N50 HGTP6N40E1D G6N50E
Contextual Info: HGTP6N40E1D, HGTP6N50E1D S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER COLLECTOR GATE • Latch Free Operation • TFALL: < 1.0µs • High Input Impedance

K06N60

Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls

g6n50e

Abstract: G6N50 HGTD6N40E1 HGTD6N40E1S HGTD6N50E1 HGTD6N50E1S
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA • 6A, 400V and 500V • VCE ON : 2.5V Max. EMITTER • TFALL: 1.0µs • Low On-State Voltage COLLECTOR

fast recovery diode 2a trr 200ns

Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls