200P1 Search Results

200L-1-203

Abstract: 200S-1-103 bourns 200l 200L-1-202 50k trimpot 200P-1-502 2n08 ltls 200S 200P-1-501
Contextual Info: BOURNS TRIMPOT AD JU STM E N T POTENTIOMETER Model 200 Industrial —W irewound —Potentiom eter VA" Lo n g Actual Size FEATURES • Lowest cost military quality potentiometer. • Ideal for computers and laboratory type applications. • Exceeds steady state humidity requirements of

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

IGBT parallel

Contextual Info: 2-Pack IGBT 1400V 200A 2MBI 200P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

ILY6

Contextual Info: LG S em ico n ORDERING INFORMATION DRAM MODULE ORDERING INFORMATION 4MD BASE GMM XXX X X X XXX X X X - XX SZEEB 6 0 : 66ns 70 ; 70ns 80 : 80ns P R E F IX O F L G S M EM ORY M ODULE F A M IL Y P A C K A G E & T E R M IN A L 7 : DRAM S : SOJ, SOLDER SG : SOJ, GOLD

Contextual Info: 2-Pack IGBT 1400V 200A 2MBI 200P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications

CCD481

Abstract: Contact image sensor fairchild
Contextual Info: PRELIMINARY LOWAL CCD481 4096 x 4096 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 4096 x 4096 Photosite Array 7.5iim x 7.5[im Pixel 30.72mm x 30.72mm Image Area 100% Fill Factor Multi-Pinned Phase MPP Option

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

200p35

Abstract: TF4S03YY 5P25CT 30P20C MIL-PRF-27F 5P10 5P70 10P25 5P48CT 10p6
Contextual Info: P 60 Hz MIL-PRF-27F* Power Transformers • Military Designation TF4S03YY • Hermetically sealed, rugged MIL-PRF-27F* transformers • Standard output voltages: 5 to 486 volts • Threaded inserts for versatile mounting • Wide range of power ratings: 5,10,15, 20, 30, 40, 80,120,

Contextual Info: 2-Pack IGBT 1400V 200A 2MBI 200P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications