200FJ. Search Results
200FJ. Price and Stock
Vishay Dale CPW03R2200FJ01RES 0.22 OHM 3W 1% AXIAL |
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CPW03R2200FJ01 | Bulk | 5 |
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Vishay Intertechnologies RH1008K200FJ01RH-100 8.2K 1% J01 - Bulk (Alt: RH1008K200FJ01) |
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RH1008K200FJ01 | Bulk | 15 Weeks | 1 |
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Vishay Intertechnologies NH2508R200FJ01NH-250 8.2 1% J01 - Bulk (Alt: NH2508R200FJ01) |
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NH2508R200FJ01 | Bulk | 9 Weeks | 1 |
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Vishay Intertechnologies NH2503R200FJ01NH-250 3.2 1% J01 - Bulk (Alt: NH2503R200FJ01) |
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NH2503R200FJ01 | Bulk | 9 Weeks | 1 |
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Vishay Intertechnologies RH2502R200FJ01RH-250 2.2 1% J01 - Bulk (Alt: RH2502R200FJ01) |
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RH2502R200FJ01 | Bulk | 12 Weeks | 1 |
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200FJ. Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MC33174
Abstract: MC33174N MC35174
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MC33174 MC35174 200fiA/Amp 100mV DIP14 200nA/Amp) MC33174N MC35174 | |
Contextual Info: cP July 1996 Revision 1.0 DATA S H E E T FUJI - " SD C 2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as |
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V6412- 16MByte SDC2UV6412- 16-megabtye 168-pin, B811171622A- 1Mx16 200mV. | |
PJ 62Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 05-101 6 5 -1 E MEMORY CMOS 1 M 16BIT FAST PAGE MODE DYNAMIC RAM M B811 6160A-60/70 C M O S 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • d e s c r ip tio n The Fujitsu M B 8 1 161 60 A is a fully d e c o d e d C M O S D ynam ic RAM D R A M th a t con ta in s 16,777,21 6 memory; cells acce ssib le in 1 6 -bit incre me nts. |
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16BIT 160A-60/70 PJ 62 | |
jb ol
Abstract: C0P402 HD637 cop402
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50kHz 12-Bit 152mm) 254mm} jb ol C0P402 HD637 cop402 | |
Contextual Info: Skive FUp-Flap 0 «C U fT S F eatu res • Comparator cannot oscillate • Fast response—5 ns data to clock setup, 20 ns clock to output • Wide input differential voltage range— 24V on ± 15V supplies • Wide input common mode voltage range— ± 12V |
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EL2019C current--100 current--30 EL2019 EL2019C | |
e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
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Harris A023
Abstract: icl7107
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312-D ICL7137 312-digit 200fj 10/iV, Harris A023 icl7107 | |
Contextual Info: JUl l e 1993 SM594000 4MByte 4M x 9 CMOS DRAM Module General Description Features The SM 594000 is a high performance, 4-megabyte dynam ic RAM module organized as 4,096,000 words by 9 bits, in a 30-pin SIM M package. The module utilizes nine CM OS 4M x 1 dynamic RAMs |
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SM594000 30-pin 60/70/80ns 60/70/80ns) |