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    200FJ. Search Results

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    Vishay Dale CPW03R2200FJ01

    RES 0.22 OHM 3W 1% AXIAL
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    DigiKey CPW03R2200FJ01 Bulk 30
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    Vishay Intertechnologies CPW03R2200FJ01

    CPW-3 .22 1% J01 - Bulk (Alt: CPW03R2200FJ01)
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    Avnet Americas CPW03R2200FJ01 Bulk 17 Weeks 5
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    • 100 $8.05
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    Vishay Intertechnologies RH250R8200FJ01

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    Avnet Americas RH250R8200FJ01 Bulk 12 Weeks 1
    • 1 $1708.92
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    Vishay Intertechnologies RH2505R200FJ01

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    Avnet Americas RH2505R200FJ01 Bulk 12 Weeks 1
    • 1 $1708.92
    • 10 $466.68
    • 100 $156.57
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    Vishay Intertechnologies NH250R3200FJ01

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    Avnet Americas NH250R3200FJ01 Bulk 9 Weeks 1
    • 1 $2597.49
    • 10 $638.27
    • 100 $207.06
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    200FJ. Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC33174

    Abstract: MC33174N MC35174
    Contextual Info: 7 7 S k/ Ä . C S - T H O M S O N I L i T lf t i S ä D @ S M C 3 3 1 7 4 - M C 3 5 1 7 4 LOW POWER QUAD BIPOLAR OPERATIONAL AMPLIFIERS • GOOD CONSUMPTION/SPEED RATIO : ONLY 200fj.A/Amp FOR 2.1MHz, 2V/ns . SINGLE (OR DUAL SUPPLY OPERATION FROM +4V TO 444V (12V TO ±22V)


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    MC33174 MC35174 200fiA/Amp 100mV DIP14 200nA/Amp) MC33174N MC35174 PDF

    Contextual Info: cP July 1996 Revision 1.0 DATA S H E E T FUJI - " SD C 2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as


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    V6412- 16MByte SDC2UV6412- 16-megabtye 168-pin, B811171622A- 1Mx16 200mV. PDF

    PJ 62

    Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET D S 05-101 6 5 -1 E MEMORY CMOS 1 M 16BIT FAST PAGE MODE DYNAMIC RAM M B811 6160A-60/70 C M O S 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • d e s c r ip tio n The Fujitsu M B 8 1 161 60 A is a fully d e c o d e d C M O S D ynam ic RAM D R A M th a t con ta in s 16,777,21 6 memory; cells acce ssib le in 1 6 -bit incre me nts.


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    16BIT 160A-60/70 PJ 62 PDF

    jb ol

    Abstract: C0P402 HD637 cop402
    Contextual Info: LintAB _ TECHNOLOGY LTC 129Q Single C h ip 12-Bit D a ta A cq uisitio n System F G 1TU R 6S D C S C M PTIO n • Software Programmable Features - Unipolar/Bipolar Conversion - Four Differential/Eight Single Ended Inputs - MSB or LSB First Data Sequence


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    50kHz 12-Bit 152mm) 254mm} jb ol C0P402 HD637 cop402 PDF

    Contextual Info: Skive FUp-Flap 0 «C U fT S F eatu res • Comparator cannot oscillate • Fast response—5 ns data to clock setup, 20 ns clock to output • Wide input differential voltage range— 24V on ± 15V supplies • Wide input common mode voltage range— ± 12V


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    EL2019C current--100 current--30 EL2019 EL2019C PDF

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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    PDF

    Harris A023

    Abstract: icl7107
    Contextual Info: IC L7 1 3 7 HARRIS S E M I C O N D U C T O R 31/2-D igit LED Low Power Single-Chip A/D Converter GENERAL DESCRIPTION FEATURES The Harris ICL7137 is a high performance, very low pow­ er 31/2-digit A/D converter. All the necessary active devices are contained on a single CMOS IC, including seven-segment decoders, display drivers, reference, and clock. The


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    312-D ICL7137 312-digit 200fj 10/iV, Harris A023 icl7107 PDF

    Contextual Info: JUl l e 1993 SM594000 4MByte 4M x 9 CMOS DRAM Module General Description Features The SM 594000 is a high performance, 4-megabyte dynam ic RAM module organized as 4,096,000 words by 9 bits, in a 30-pin SIM M package. The module utilizes nine CM OS 4M x 1 dynamic RAMs


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    SM594000 30-pin 60/70/80ns 60/70/80ns) PDF