200A FET Search Results

BUK555-200A

Abstract: BUK555-200B M251 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N AUER PHILIPS/DISCRETE bRE V • L.L53R31 DDSOVVO SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK554-200

Abstract: BUK554-200A BUK564-200A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK564-200A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

K545

Abstract: BUK545 BUK545-200A BUK545-200B
Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AUER PHILIPS/DISCRETE b'lE P • bb 5 3 R 31 0 0 3 0 6 1 3 3 T6 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 200A, o . o n n 1 0 0 V , SDF200NA10 HE FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

hd6433577p20

Abstract: Hitachi DSA00276
Contextual Info: Hitachi Single-Chip Microcomputer H8/3577 Series, H8/3567 Series H8/3577 H8/3574 H8/3567 H8/3564 H8/3567U H8/3564U HD6433577, HD6473577 HD6433574 HD6433567, HD6473567 HD6433564-20, HD6433564-10 HD6433567U, HD6473567U HD6433564U Hardware Manual ADE-602-200A

Contextual Info: - Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-200A/B PHILIPS N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended tor use in

PHM8001

Abstract: phm8
Contextual Info: MOSFET MODULE PHM8001 Single 800A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g

tlp250

Abstract: 212J igbt drive tlp250
Contextual Info: GaAGAs IRED a PHOTO-IC TLP250 TENTATIVE DATA Unit in mm TRANSISTOR INVERTER INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE The Toshiba TLP250 consists of a GaA£As light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.

Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bb53T31 0030600 D77 » A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

K575

Abstract: BUK575 BUK575-200A BUK575-200B 05 k575 BUK575-200
Contextual Info: - 3 9 -0 ? Philips Components Data sheet status Prelim inary specification d ate of issue March 1991 R eplaces B U K 5 4 5 -2 0 0 A /B PHILIPS PowerMOS transistor Logic level FET SbE D INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

k554

Abstract: kiv 499 BUK554-200A BUK554-200B
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

RHR660

Abstract: RHRD660S9A
Contextual Info: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

TA49059

Abstract: rhrp TA4905
Contextual Info: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

MJ10200

Abstract: MC13528 MTE200N05 C2785 high speed Zener Diode 200v 200A fet MTE200N06 MR2525L equivalent 200a mosfet MJ-102
Contextual Info: AR133 mi lllililll g M ilM MULTICHIP POWER MOSFETS BEAT BIPOLARS AT HIGH-CURREIUT SWITCHING iMMHi By W arren Schultz Motorola Inc. Power Products Division Reprinted by Permission of ELECTRONIC DESIGN, June 14, 1 9 8 4 . 1984, Hayden Publishing Co., Inc.

Contextual Info: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RHRD660S9A_F085 Data Sheet July 2011 6A, 600V Hyperfast Diodes Features The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

BUK545

Abstract: BUK545-200A BUK545-200B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK554-200A

Abstract: BUK554-200B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

FGH60N60SMD-F085

Abstract: FGH60N60SMD_F085 FGH60N60
Contextual Info: FGH60N60SMD_F085 600V, 60A Field Stop IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power

power mosfet 80v 150a

Contextual Info: SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

FGH50T65UPD

Contextual Info: FGH50T65UPD 650V, 50A Field Stop Trench IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS, Induction Heating and Digital