200A FET Search Results

100C

Abstract: BUK564-200A
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA PIN Drain-source voltage Drain current DC Total power dissipation Junction temperature

BUK565-200A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK554-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors Product specification PowerMOS transìstor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a

FET TH 469

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

BUK555-200A

Abstract: BUK555-200B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK555-200A

Abstract: BUK555-200B M251 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N AUER PHILIPS/DISCRETE bRE V • L.L53R31 DDSOVVO SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK554-200

Abstract: BUK554-200A BUK564-200A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK564-200A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

D 843 Transistor

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

K545

Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Contextual Info: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

philips 035

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK554-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Transistor 51Y

Abstract: 51y diode S20Q
Contextual Info: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

K545

Abstract: BUK545 BUK545-200A BUK545-200B
Contextual Info: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: N AUER PHILIPS/DISCRETE b'lE P • bb 5 3 R 31 0 0 3 0 6 1 3 3 T6 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 200A, o . o n n 1 0 0 V , SDF200NA10 HE FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

hd6433577p20

Abstract: Hitachi DSA00276
Contextual Info: Hitachi Single-Chip Microcomputer H8/3577 Series, H8/3567 Series H8/3577 H8/3574 H8/3567 H8/3564 H8/3567U H8/3564U HD6433577, HD6473577 HD6433574 HD6433567, HD6473567 HD6433564-20, HD6433564-10 HD6433567U, HD6473567U HD6433564U Hardware Manual ADE-602-200A

Contextual Info: - Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-200A/B PHILIPS N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended tor use in

TP5335

Abstract: TP5335K1 TP5335NW MOS P-Channel SOT23
Contextual Info: TP5335 TP5335 Low Threshold Product Objective Specification P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Wafer -350V 25Ω -2.4V TP5335K1 TP5335NW *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.