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    200WPEP Datasheets Context Search

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    2SC2652

    Contextual Info: SILICO N NPN EPITAXIAL PLA N A R T Y P E 2SC2652 2 '3 0MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Unit in m m FEATURES_ . S p e c i f i e d 50V, 2 8 M H z C h a r a c t e r i s t i c s : Output Power : Po=200WpEP : Mi nimu m Gain : Gpe=13dB


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    2sc2652200wpep150wpep28mhz+3200wp150pf022af PDF

    2sc2652

    Contextual Info: TOSHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.)


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    2sc265228mhz200wpep961001eaa2 PDF

    2sc2652

    Abstract: 50WV 10ID 1S1555 2-13B1A
    Contextual Info: TO SHIBA 2SC2652 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 52 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Po = 200WpEp Output Power Power Gain Gp = 13dB (Min.)


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    2sc265230mhz28mhz200wpep+8000mhz001mhz100ma961001eaa250wv10id1s15552-13b1a PDF

    2sc2652

    Abstract: 2-13B1A 200WPEP
    Contextual Info: TOSHIBA 2SC2652 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 50V SUPPLY VOLTAGE USE Specified 50V, 28MHz Characteristics Output Power Po = 200WpEP Power Gain Gp = 13dB (Min.) Collector Efficiency


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    2sc265230mhz28mhz200wpep+5--30db2-13b1a100ma1s1555961001eaa2 PDF

    2SC2652

    Abstract: 10ID 1S1555 50WV
    Contextual Info: T O S H IB A 2SC2652 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2652 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS 50V SUPPLY VOLTAGE USE Unit in mm Specified 50V, 28MHz Characteristics Po = 200Wpj]p Output Power Power Gain Gp = 13dB (Min.)


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    2sc265230mhz28mhz200wpep+5100ma961001eaa210id1s155550wv PDF

    Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    vrf161150mhz30mhzmrf151 PDF

    VK200-4B

    Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    vrf161150mhz30mhzmrf151+1vk200-4b PDF