20040302 Search Results

FDS6679

Abstract: FDN358P FDN360P FDW2506P FDZ206P U01LR2KCCB FDS4435 HTRB
Contextual Info: Date Created: 1/16/2004 Date Issued: 2/23/2004 PCN # 20040302 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.

12945

Abstract: PH3830L
Contextual Info: PH3830L N-channel TrenchMOS logic level FET Rev. 03 — 2 March 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low thermal resistance

Q65110A2303

Abstract: A679 Q65110A2297
Contextual Info: LC SIDELED Low Current LED LS A679, LY A679, LG A679 Non-RoHS compliant version of product will be discontinued acc. to OS-PD-2005-005. The product itself will remain within RoHS compliant version. Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser

RN1970HFE

Abstract: RN1971HFE RN2970HFE RN2971HFE
Contextual Info: RN1970HFE,RN1971HFE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970HFE,RN1971HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

cga manual diagram

Abstract: Color Graphics Adapter CGA
Contextual Info: Copyright Trademarks 2004 by Samsung Electronics co., Ltd. All rights reserved. Under the copyright laws, this manual cannot be reproduced in any form without the prior written permission of Samsung Electronics Co., Ltd. No patent liability is assumed with

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

PH3230S

Contextual Info: PH3230S N-channel TrenchMOS logic level FET M3D748 Rev. 03 — 02 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level compatible

TAR8D03K

Abstract: 8D03
Contextual Info: TAR8D03K TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TAR8D03K Dual Low-Dropout Regulator TAR8D03K is a bipolar type 2-output power supply with a control pin. ON and OFF can be switched using the control pin. Features • Include 2-LDO regulators. 2.8V, 3.0V

PHK12NQ03LT

Contextual Info: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance

16 bit ic rf encoder

Abstract: Decoder 8 to 256 single ic ir encoder decoder 4 bit 8 bit encoder and decoder IC IR decoder transmission ic address decoder mosdesign semiconductor 8 pin rf Encoder IC 16 to 4 encoder ic 8 TO 64 DECODER
Contextual Info: 一華半導體股份有限公司 EN/DECODER MOSDESIGN SEMICONDUCTOR CORP. M3EB 3 STATES ENCODER 3 態編碼 IC GENERAL DESCRIPTION 功能敘述 The M3EB is a CMOS ASIC decoder. It will en-code 12 parallel input and serially transmit them to the output when D0 ~ D3

TA1276ANG

Contextual Info: TA1276ANG TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1276ANG PAL / NTSC VIDEO CHROMA AND DEFLECTION IC FOR CTV NORMAL SCAN / DOUBLE SCAN MODE TA1276ANG provides Video, Chroma and Deflection (Sync, when double scan mode) circuit for a PAL / NTSC Color TV, and

Contextual Info: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Inverter Circuit ,Interface Circuit and Driver Circuit Applications Q1 Since bias resistance is built in the transistor,the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an

Contextual Info: LC SIDELED Low Current LED LS A679, LY A679, LG A679 Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung parallel zur Platine, deshalb ideal zur Einkopplung in Lichtleiter

Contextual Info: TAR8D03K TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TAR8D03K Dual Low-Dropout Regulator TAR8D03K is a bipolar type 2-output power supply with a control pin. ON and OFF can be switched using the control pin. Features • Include 2-LDO regulators. 2.8V, 3.0V

PH3830L

Contextual Info: PH3830L N-channel TrenchMOS logic level FET Rev. 04 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

2SC4738

Abstract: HN2E02F 1SS352 HN2E02
Contextual Info: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance

SCC68681

Abstract: SCN68681 SCN2681 SCN68681C1A44 SCN68681C1N40 SCN68681E1A44 SCN68681E1N40 Philips PE 1938 scn68681e
Contextual Info: INTEGRATED CIRCUITS SCN68681 Dual asynchronous receiver/transmitter DUART Product data Supersedes data of 1998 Sep 04 Philips Semiconductors 2004 Mar 02 Philips Semiconductors Product data Dual asynchronous receiver/transmitter (DUART) SCN68681 • 16-bit programmable Counter/Timer

1SS352 equivalent

Abstract: 1SS352 2SC4666 HN2E01F
Contextual Info: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.)

Contextual Info: RN4990HFE, RN4991HFE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4990HFE, RN4991HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. EN/DECODER 3 態 59,049 碼 30 秒自動斷電 單鍵發射 3-STATE 59,049 CODES 30 SECOND POWER OFF DIRECT DATA TRANSMIT FEATURES 功能敘述 • Built-in IR carrier ─ suffix-I.

sot669 footprint

Abstract: PH3230S
Contextual Info: PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

RN1970HFE

Abstract: RN1971HFE RN2972HFE RN2973HFE
Contextual Info: RN2972HFE,RN2973HFE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2972HFE,RN2973HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)

Contextual Info: Hyper SIDELED High optical Power LED HOP LY A675 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung parallel zur Platine, deshalb ideal zur

Contextual Info: TAIPEI : TEL : FAX : H.K. : TEL : FAX : 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. EN/DECODER 3 態 531,441 碼 內建紅外線發射器 可單鍵發射 3-STATE 531,441 CODES BUILT-IN IR CARRIER DIRECT DATA TRANSMIT FEATURES 功能敘述