200 AMPERE POWER DIODE Search Results

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power

MJ10021 equivalent

Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
Contextual Info: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for

1N4937

Abstract: MJ10020 MJ10021 AN222A
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

1N4937

Abstract: MJ10020 MJ10021
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

BAV19

Abstract: BAV20 BAV21
Contextual Info: BAV19 THRU BAV21 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency

BAV19

Abstract: High Speed Switching Diodes
Contextual Info: HITANO ENTERPRISE CORP. BAV19 THRU BAV21 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE - 100 to 200 Volts CURRENT - 0.2 Ampere FEATURES * * * * * * Silicon epitaxial planar diodes Low power loss, high efficiency Low leakage Low forward voltage

BAV16WS

Contextual Info: HITANO ENTERPRISE CORP. BAV16WS THRU BAV21WS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency

BAS16

Contextual Info: HITANO ENTERPRISE CORP. BAS16 THRU BAS21 TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency

tip122 tip127 audio amp

Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power

BAS16W

Contextual Info: HITANO ENTERPRISE CORP. BAS16W THRU BAS21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency

BAV16W

Contextual Info: HITANO ENTERPRISE CORP. BAV16W THRU BAV21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency

BAV19W

Contextual Info: HITANO ENTERPRISE CORP. BAV16W THRU BAV21W TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SWITCHING DIODE VOLTAGE RANGE - 75 to 200 Volts CURRENT - 0.2 to 0.25 Ampere FEATURES * Surface Mount Package Ideally Suited for Automatic Insertion * Low power loss, high efficiency

Contextual Info: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal

mje15033 replacement

Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

BU806

Contextual Info: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal

CASE 221A Style 1

Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,

bu806 REPLACEMENT

Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.

npn darlington transistor 200 watts

Abstract: Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.

BU108

Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —

mj power transistor speedup diode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,

CHM640NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CHM640NGP CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. D2PAK

CHM630PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM630PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 7.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

Contextual Info: Test Procedure for the NCP5104 29-Oct-07 A Vac A V V J2 jumper Table 1: Required Equipment AC power source can be able to two volt-meters deliver 230Vrms or 110Vrms One NCP5104 Evaluation Board 1 resistive load: 200 Ω / 50 W two ampere-meters Rload 200Ω

MURF1620

Abstract: MURF1620CT
Contextual Info: MURF1620CT Dual Ultrafast Plastic Rectifiers ITO-220AB PRV : 200 Volts Io : 16 Ampere 0.134 3.4 DIA. 0.113(3.0)DIA. FEATURES : 0.112(2.85) 0.100(2.55) 0.185(4.70)Max. 0.406(10.3)MAX. 0.124(3.16)Max. 0.272(6.9) 0.248(6.3) * Ideally suited for free wheeling diode power factor