2.45 GHZ POWER AMPLIFIER Search Results

CAP 0805 ATC 600F

Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Contextual Info: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

TC2996D

Abstract: GaAs FET chip GRM39Y5V104Z25V
Contextual Info: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

UM 7106

Abstract: TC2696 2.45 Ghz power amplifier
Contextual Info: TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 2.45 GHz • 14 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 43 dBm Typical at 2.45 GHz • • High Power Added Efficiency:

power amplifier circuit diagram with pcb layout

Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
Contextual Info: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are

TAE-1010AB

Abstract: Teledyne Electronic Technologies tae1010 1010a tae-1010
Contextual Info: Product Information ISO 9001 CERTIFIED TAE-1010AB 2.45 GHz GaAs MMIC ISM Band Power Amplifier Features: ♦ ♦ ♦ ♦ ♦ 1/4 Watt Output Power 25 dB Gain Low Voltage Operation 3 Stage GaAs MMIC Amplifier Surface Mount Package Product Description: The TAE-1010AB is a 3 stage GaAs MMIC MESFET power amplifier for 2.45 GHz ISM applications.

vm 700

Abstract: RMPA2550
Contextual Info: RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz

Contextual Info: RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz

UPD5702TU

Abstract: UPD5702TU-E2
Contextual Info: PRELIMINARY DATA SHEET NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU INTERNAL BLOCK DIAGRAM FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND

Contextual Info: «Fl MICRO-DEVICES Proposed RF2127 I 2.5 GHz MEDIUM POWER LINEAR AMPLIFIER Application: Features: • • • • • • • • • • Wireless LAN PCS Communication Systems 2.45 GHz ISM Applications Commercial and Consumer Systems Portable Battery Powered Equipment

IPC-SM-782

Abstract: RF5189 mini pci pcb layout
Contextual Info: RF5189 RF51893V, 2.45 GHz Linear Power Amplifier 3V, 2.45GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power 25dB Small Signal Gain  High Linearity 2400MHz to 2500MHz Frequency Range IEEE802.11B WLAN Applications  2.5GHz ISM Band Applications 

UPD5702TU

Abstract: UPD5702TU-E2-A
Contextual Info: NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU INTERNAL BLOCK DIAGRAM FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND Pin1 4 5 Pout1 • SINGLE SUPPLY VOLTAGE:

RF2127

Abstract: transistor F24 47
Contextual Info: R F I M IC R O -D EV IC ES Proposed RF2127 I 2.5 GHz MEDIUM POWER LINEAR AMPLIFIER Application: Features: • • • • • • Single Positive Supply Operation • Operates from 3V to 6.5V Wireless LAN PCS Communication Systems 2.45 GHz ISM Applications

FC20U

Abstract: SA2420 SA2421 SA2421DH TSSOP24
Contextual Info: Philips Semiconductors Product specification 2.45 GHz low voltage RF transceiver SA2421 DESCRIPTION PIN CONFIGURATION The SA2421 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed using a 20 GHz f j BiCMOS process, QUBiC2, for high-performance low-power

TC3879

Abstract: thermal conductivity ceramic FET
Contextual Info: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%

SA2420DH

Contextual Info: Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined tow-noise amplifier, receive mixer, transmit mixer and LO buffer 1C designed tor high-performance iow-power communication systems for

LNA Mixer VCO 2.4 GHz

Abstract: 2.1Ghz oscillator 2.45Ghz 10dbm oscillator PHILIPS CD 245 LNa - 2.45Ghz 2.45Ghz oscillator circuit
Contextual Info: Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer 1C designed for high-performance iow-power communication systems for

Contextual Info: Philips Semiconductors Objective specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2421 PIN CONFIGURATION The SA2421 transceiver is a combined low-nolse amplifier, receive mixer, transmit mixer and LO buffer IC designed for high-performance low-power communication systems for

TAE-1030

Contextual Info: Product Information ISO 9001 CERTIFIED TA E - 1 0 3 0 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +30dBm Saturated Output Power 28.5 dBm Minimum Linear Output Power 25 dB Minimum Small Signal Gain Thermally Efficient Moly-Copper Package

NE552R479A-T1A

Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

TAE-1030

Contextual Info: Product Information ISO 9001 CERTIFIED TA E - 1 0 3 0 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ +28.5dBm Output Power @1dBm Gain Compression ♦ 25 dB Minimum Small Signal Gain ♦ Surface Mount, Thermally Efficient Moly-Copper Package

2.45 Ghz power amplifier 45 dbm

Abstract: J842 2.45 Ghz power amplifier 30 db
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

2.45 Ghz power amplifier

Abstract: TAE-1010AB RF MESFET S parameters 1010a tae1010
Contextual Info: Product Information ISO 9001 CERTIFIED TA E - 1 0 1 0 A B 2.45 GHz GaAs MMIC ISM Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +24dBm Output Power @ 1dB Gain Compression 25 dB Gain Low V oltage Operation Voltage Surface Mount Molly-Copper Package Product Description

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

ne552r

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our