2.2K RESISTOR Search Results

VDD33

Abstract: P0C2102 VDD25 N0FPGA0VDD2505
Contextual Info: 2 3 R5 P0R3302 0.1uF P0D40A C16 LED D4 3.3V PowerSupply 10uF Ceramic 0805 VDD25_5 N0FPGA0VDD2505 FPGA_VDD25_5 C17 0.1uF P0C1702 P0C1701 LED C15 VDD25_5 P0R602 P0C1602 P0C1601 P0R3202 C14 D3 P0R601 P0C1502 P0C1501 R32 P0R3201 2.2K R33 P0R3301 2.2K 2.2K 2.2K

1223 digital transistor

Abstract: UNR1222 UNR1221 UNR1223 UNR1224
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor 2.5±0.1 6.9±0.1 ● ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UNR1221 UNR1222 UNR1223 UNR1224 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ

Contextual Info: DTC023E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA023E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value -50V IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ 2) Built-in bias resistors enable the configuration of

UN4221

Abstract: UN4222 UN4223 UN4224
Contextual Info: Transistors with built-in Resistor UN4221/4222/4223/4224 Silicon NPN epitaxial planer transistor Unit: mm 3.0±0.2 4.0±0.2 For digital circuits ● ● ● ● marking R1 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ UN4221 UN4222 UN4223 UN4224 (R2) 2.2kΩ 4.7kΩ 10kΩ

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

Contextual Info: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 50V DTC123EM DTC123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

low voltage output NPN silicon epitaxial planar

Abstract: ta 1223 833H-1C-C-12VDC SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor UNR1221 UNR1222 UNR1223 UNR1224 1223 digital transistor
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor (1.0) (1.5) R 0.9 ● ● • (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 2.4±0.2 (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (0.85) 0.55±0.1 3 Absolute Maximum Ratings (Ta=25˚C)

DIN 6784

Abstract: BCR153 BCR153F BCR153L3 BCR153T BCR153U SC74 SC75
Contextual Info: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3

Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ BCR103F BCR103L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR103F WAs

Contextual Info: DTC123E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 2.2kΩ DTC123EM DTC123EMFHA DTC123EE DTC123EEFRA 2.2kΩ (SC-105AA) SOT-416(SC-75A) VMT3 EMT3

Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors AEC-Q101 Qualified l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EMFHA DTA123EE DTA123EEFRA (SC-105AA)

marking code TS

Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Contextual Info: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R2 =2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR153F

Abstract: BCR108T BCR153 BCR153L3 BCR153T BCR153U SC75 SCD80
Contextual Info: BCR153. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=2.2kΩ, R 2=2.2kΩ • BCR153U: Two internally isolated transistors with good matching in one multichip package BCR153F/L3

BCR10

Abstract: BCR103 BCR103F BCR103L3 BCR103T BCR103U SC75
Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

SC-105AA

Abstract: SE-b2 resistor 2012 rohm DTA123E 2012 footprint dimension MARKING CODE 1616 SOT-346 saa1
Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 2.2k IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN IN GND GND DTA123EM (SC-105AA) UMT3 DTA123EE SOT-416 (SC-75A)

1223 digital transistor

Abstract: UNR1221 UNR1222 UNR1223 UNR1224
Contextual Info: Transistors with built-in Resistor UNR1221/1222/1223/1224 UN1221/1222/1223/1224 Silicon NPN epitaxial planar transistor ● ● ● • UNR1221 UNR1222 UNR1223 UNR1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (1.0) 0.45±0.05 0.55±0.1 3 2 (2.5) Parameter Symbol

BCR103

Abstract: BCR103F BCR103L3 BCR103T BCR108T E6327 SC75
Contextual Info: BCR103. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ BCR103F BCR103L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR103F WAs

Q62702-C2370

Contextual Info: BCR 503 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ Type Marking Ordering Code Pin Configuration BCR 503 XAs 1=B Q62702-C2370 Package 2=E 3=C SOT-23 Maximum Ratings

BCR153U

Abstract: SC74
Contextual Info: BCR153U PNP Silicon Digital Transistor Preliminary data 5
Switching circuit, inverter, interface circuit, 4 6 driver circuit
Two galvanic internal isolated Transistors 3 with good matching in one package 2
Built in resistor (R 1=2.2k, R2=2.2k) 1

Contextual Info: SIEMENS BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=2.2k£i, Ft2=2.2k£2 ^ FI 4 a r ^ r z Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371

UNR4221

Abstract: UNR4222 UNR4223 UNR4224
Contextual Info: Transistors with built-in Resistor UNR4221/4222/4223/4224 UN4221/4222/4223/4224 Unit: mm 4.0±0.2 3.0±0.2 Silicon NPN epitaxial planer transistor For digital circuits ● ● ● ● UNR4221 UNR4222 UNR4223 UNR4224 1 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ