2.2B Search Results

IC 23843 8 pin

Abstract: d 31855 manual 23843 8 pin
Contextual Info: MF1242-06 S1D15910 Series Rev.2.2b “Seiko Epson is neither licensed nor authorized to license its customers under one or more patents held by Motif Corporation to use this integrated circuit in the manufacture of liquid crystal display modules. Such license, however, may be obtained directly from MOTIF by writing to: Motif, Inc., c/o In Focus Systems, Inc.,

Contextual Info: MSL1 *Pb Free part Customer Name Standard specification System Band40 Rx 50/100ohm Balance DATE July 22, 2011 Part Number F6KB2G350B4HTB Version 2.2b Final Table 1 Electrical Specification Passband :2300 ~ 2400 MHz Item Condition Specification Min. Typ.

Contextual Info: Pb MSL1 Pb-free * Pb Free Part Customer Name Standard System W-CDMA I 2G Rx Date Part Number FAR-F6KY-2G1400-B4UY Version 2.2b April 2, 2012 Final Table 1 Electrical Specification Specification Condition Parameter Ver. 2.2b (MHz) Unit Min. Typ. Max. Insertion Loss

Contextual Info: REV. RE' ENDED P. >R O P C - D MATING ROAR D .RD FOR MAX 25 POS PER ROW - [ No OF POS PER ROW x 2 - 1 ) -J .025 [.64]) + .300 [7.62]} ±.002 [.05] 155 [1.91] .023 [38.74] ir □DDDDDDDDDDDDDDDDDDDDDDDD .230 [5.S .090 [2.2B] - [(No OF POS PER ROW x 2) - 1 ) — @ .025 [.64]} ±.0015 [.038]

L2HF

Contextual Info: Do Not Duplicate Customer Name Standard Characteristics FUJITSU MEDIA DEVICES LIMITED System TDSCDMA DATE FMD Part Number FAR-F6EA-2G0175-L2HF Version 2.2b Jul. 14, 2004 Table 1. Electrical specifications Item Proposal Condition Unit Min. Typ. Max. Insertion Loss

Contextual Info: MSL1 *Pb Free part Customer Name Standard specification System Band7 Tx 50/50ohm Unbalance DATE July. 22, 2010 Part Number F6KA2G535L4AM Version 2.2b Final Table 1 Electrical Specification Passband : 2500 ~ 2570 MHz Condition (MHz) Item Specification Min.

Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

SIA456DJ

Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SI7997Dp

Contextual Info: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

ksz9031

Abstract: KSZ9031RNXIA KSZ9031RNX 73d15 KSZ9021RN KSZ9031RN KSZ9031RNXCC KSZ9031RNXCA JK0-0136NL TG1G-S001NZ
Contextual Info: KSZ9031RNX Gigabit Ethernet Transceiver with RGMII Support Data Sheet Rev. 1.0 General Description Features The KSZ9031RNX is a completely integrated triple-speed 10Base-T/100Base-TX/1000Base-T Ethernet physicallayer transceiver for transmission and reception of data on

3RT20

Abstract: 3RT20 15-1BB41 3RT20 16-1BB42 3RV20 3RT20 16-2BB42 3RH29 siemens contactors price 3RT20 siemens 16-1BM41 3RT20 23 siemens
Contextual Info: D K A h i h e o r u a r y l, z u i u Controls - Contactors and C ontactor Assem blies In tro d u c tio n Ove rview S ize Type SOO 3R T 20 1 SO 3 R T 20 2 3RT20 c o n ta c to rs Type 3 R T 2 0 15 A C , D C o p e ra tio n p. 3 /8 ,3 /1 1 3 R T 2 0 16 3 R T 2 0 17

si8805

Abstract: si88
Contextual Info: New Product Si8805EDB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A)a 0.068 at VGS = - 4.5 V - 3.1 0.088 at VGS = - 2.5 V - 2.7 0.155 at VGS = - 1.5 V - 2.1 0.290 at VGS = - 1.2 V - 0.5 • • • •

SIA461DJT1GE3

Abstract: 63838 sia461djt
Contextual Info: New Product SiA461DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. - 20 ID (A)a 0.033 at VGS = - 4.5 V - 12 0.042 at VGS = - 2.5 V - 12 0.055 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package

SiA445EDJ

Abstract: SIA445EDJ-T1-GE3
Contextual Info: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single

Contextual Info: New Product SiA462DJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.018 at VGS = 10 V 12 0.020 at VGS = 6 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 5 nC • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SiA400EDJ Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 12 0.025 at VGS = 2.5 V 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Si4630DY

Abstract: Si4630DY-T1-E3 Si4630DY-T1-GE3
Contextual Info: Si4630DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SiA413DJ

Abstract: SiA413DJ-T1-GE3
Contextual Info: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET

Si4634DY

Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SiA411DJ

Abstract: SiA411DJ-T1-GE3
Contextual Info: New Product SiA411DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET Power MOSFET

Si4628DY

Abstract: si4628
Contextual Info: Si4628DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0030 at VGS = 10 V 38 0.0038 at VGS = 4.5 V 33 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Gen III

Contextual Info: Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a 0.0034 at VGS = 10 V 31.3 0.0044 at VGS = 4.5 V 27.5 • TrenchFET Power MOSFET Qg (Typ.) • 100 % Rg and UIS Tested 22.5 nC