2.2 K RESISTOR Search Results

PDTA123EE

Abstract: SOT883 PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PDTA123J

Abstract: PDTA123JU PDTA123JE PDTA123JEF PDTA123JK PDTA123JM PDTA123JS PDTA123JT SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123J series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Apr 14 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

PDTA123J

Abstract: PDTA123JU PDTA123JE PDTA123JEF PDTA123JK PDTA123JM PDTA123JS PDTA123JT SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123J series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;

DATA SHEET inverter Delta

Abstract: PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SC-101 SC-43A SC-59A
Contextual Info: PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 03 — 5 April 2005 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET . Table 1: Product overview Type number Philips JEITA

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

Contextual Info: ADVANCE INFORM ATIO N A M D ii Am29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — 2.2 to 2.7 volt read and w rite operations for battery-powered applications

PDTC123

Abstract: PDTC123TK PDTC123TE PDTC123TM PDTC123TS PDTC123TT PDTC123TU SC-101 SC-43A SC-59A
Contextual Info: PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors RET family in Surface Mounted Device (SMD) plastic packages.

TRANSISTOR SMD MARKING CODE 2s

Abstract: PUMD30 PUMH30 PUMB30 BC847BS BC847BV PEMB30 PEMD30 PEMH30
Contextual Info: PEMH30; PUMH30 NPN/NPN double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 28 March 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface Mounted Device (SMD)

Contextual Info: SCLT3-8BT8 Protected digital input termination with serialized state transfer Datasheet - production data • Power supply and input protection, RI = 2.2 k: – IEC 61000-4-4 transient burst: ± 4 kV minimum – IEC 61000-4-5 voltage surge: ± 1 kV minimum

diode lt 436

Abstract: Diode LT 228 lt 6249 resistor kyocera 0.1 micro farad capacitor datasheet 100 kilo ohms avx polYESTER capacitors capacitors 104 glass capacitor poly carbonate capacitors
Contextual Info: A KYOCERA GROUP COMPANY AVX Dielectric Comparison Chart Capacitor Dielectric Comparison Chart Multi-Layer Ceramics Multi-Layer Glass-K Internal Barrier Layer NP0 Stable HiK Ceramic Discs Range, mfd 1pF – .01µF 1pF – 2.2µF .001 – 10µF 1pF 0.1µF .01 –

Contextual Info: ADVANCE INFORMATION A M D ii Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations ■

Contextual Info: PR ELIM IN ARY AMDZ1 Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

Contextual Info: AMD il PRELIM IN ARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

AN2846

Abstract: AN2853 EN60947-5-2 IEC61131-2 VNI8200XP optotransistors surface mount spi Low Side Driver ST
Contextual Info: SCLT3-8BT8 Protected digital input termination with serialized state transfer Features • 8-input circuit in common ground low side topology ■ Wide range input DC voltage VI : -30 V to 35 V – On state threshold : < 11 V with RI = 2.2 kΩ – Off state threshold: Iin > 1.5 mA or Vi > 5 V

VSM1505

Abstract: MIL-R-55342 MIL-R-55342D VSM0805 9307 251528
Contextual Info: P R E C I S I O N B U L K M E T A L F O I L T E C H N O L O G Y VISHAY VSM STYLE Discrete Surface Mount Chip Resistors FEATURES • Temperature Coefficient of Resistance: Nominal TCR: +0.6 ppm/°C 0°C to +25°C –0.6 ppm/°C (+25°C to +60°C) +2.2 ppm/°C (–55°C to +25°C)

Contextual Info: G E C M P L E S S E Y i l > l \ I IJ ( I ADVANCE INFORMATION O K S D.S. 3700 2.2 SP8852D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8852D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the

Contextual Info: CMM1301 9 =• C B L E R S T B K Pow er Amplifier 1.7 to 2.2 GHz 250mW +24 dBm June 1995 (1 of 4) F un ction al B lock Diagram Features -vg □ □ Ql Q Ql +Vd 250mW (+24 dBm) output power 25% pow er added efficiency 12 dB pow er control range Surface m ount SOIC-16 narrow plastic package

Contextual Info: Whp% HEWLETT m lfim P A C K A R D 0 .1 - 6 GHz 3 V, 17 dBm Amplifier Technical Data MGA-82563 Features • +17.3 dBm Pi dB at 2.0 GHz Surface Mount Package SOT-363 SC -70 +20 dBm Psat at 2.0 GHz • Single +3V Supply • 2.2 dB N oise Figure at 2.0 GHz • 13.2 dB Gain at 2.0 GHz

transistors BC 458

Abstract: equivalent transistor TL431AC bc DM 0365 R pin EQUIVALENT TL431CDR2G TL431BIDR2G TL431ACDR2G TL431ACDG TL431AILPRMG mc7805 transistor BC 635
Contextual Info: TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These

TL431ACDG

Abstract: TL431AILPRMG transistor TL431 NCV431A TL431 TL431AC TL431AI TL431B TL431C TL431I
Contextual Info: TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These

MUN5211DW

Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free R2 1 4 6 5 4 R2 Q1 R1 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current

Contextual Info: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value

Contextual Info: KAL Series Stackpole Electronics, Inc. Aluminum Housed Surface Mount Resistor • • • • • • • • Features: Resistive Product Solutions Aluminum housing for maximum heat dissipation Complete welded construction 5 - 50W tinned copper terminals Centerless ground steatite or alumina cores

2SK772

Abstract: 140je N0239
Contextual Info: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C